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TI-DRV10983-Q1.pdf
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TI-DRV10983-Q1.pdf
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VCP
CPP
CPN
SW
SWGND
VREG
V1P8
GND
V3P3
SCL
SDA
FG
VCC
VCC
W
W
V
V
U
U
PGND
PGND
DIR
SPEED
Interface to
Microcontroller
0.1 µF
10 nF
47 µH
10 µF
1 µF
10 µF
1 µF
VCC
5 V
M
Copyright © 2017, Texas Instruments Incorporated
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An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.
DRV10983-Q1
SLVSD14A –JUNE 2017–REVISED JUNE 2020
DRV10983-Q1 Automotive, Three-Phase, Sensorless BLDC Motor Driver
1
1 Features
1
• Qualified for automotive applications
• AEC-Q100 qualified with the following results:
– Device temperature grade 1: –40°C to 125°C
ambient operating temperature range
– Device HBM ESD classification level 1C
– Device CDM ESD classification level C4A
• Operation voltage range:
– Motor operation, 6.2 V to 28 V
– Register setting preserved, 4.5 V to 45 V
• Supports load dump voltage up to 45 V
• Total driver H + L r
DS(on)
– 250 mΩ at T
A
= 25°C
– 325 mΩ at T
A
= 125°C
• Drive current: 2-A continuous winding current (3-A
Peak)
• Configurable output PWM slew rate and frequency
for EMI management
• Sensorless proprietary Back Electromotive Force
(BEMF) control scheme (no need of hall sensors)
• Continuous sinusoidal 180° commutation
• Initial position-detect algorithm to avoid back spin
during start-up
• No external sense resistor required
• Flexible user interface options:
– I
2
C interface: access registers for command
and feedback
– Dedicated SPEED pin: accepts either analog
or PWM input
– Dedicated FG pin: provides TACH feedback
– Spin-up profile can be customized with
EEPROM
– Forward-reverse control with DIR pin
• Integrated buck converter to efficiently provide 5‑V
and 3.3-V LDOs for internal and external circuits
• Supply current 8.5 mA with standby version
(DRV10983SQ)
• Supply current of 48 μA with sleep version
(DRV10983Q)
• Protection features
– Overcurrent protection (protection for phase-to-
phase, phase-to-GND and phase-to-v
CC
shorts
– Lock detection
– Anti-Voltage Surge (AVS) protection
– UVLO protection
– Thermal shutdown protection
• Thermally enhanced package
2 Applications
• Small automotive pumps and fans
• Seat ventilation fans
• Motorcycle fuel pumps
• HEV battery cooling fans
3 Description
The DRV10983-Q1 device is a 3-phase sensorless
motor driver with integrated power MOSFETs, which
can provide continuous drive current up to 2 A. The
device is specifically designed for cost-sensitive, low-
noise, low-external-component-count fan and pump
applications.
The DRV10983-Q1 device preserves register setting
down to 4.5 V and delivers current to the motor with
supply voltage as low as 6.2 V. If the power supply
voltage is higher than 28 V, the device stops driving
the motor and protects the DRV10983-Q1 circuitry.
This function is able to handle a load dump condition
up to 45 V.
TI provides DRV10983-Q1 tuning Guide for quick
setup and tuning of the device for optimal
performance.
Device Options:
• DRV10983Q: Sleep Version
• DRV10983SQ: Standby Version
Device Information
(1)
PART NUMBER PACKAGE BODY SIZE (NOM)
DRV10983-Q1 HTSSOP (24) 7.80 mm × 6.40 mm
(1) For all available packages, see the orderable addendum at
the end of the data sheet.
Application Schematic
2
DRV10983-Q1
SLVSD14A –JUNE 2017–REVISED JUNE 2020
www.ti.com
Product Folder Links: DRV10983-Q1
Submit Documentation Feedback Copyright © 2017–2020, Texas Instruments Incorporated
Table of Contents
1 Features.................................................................. 1
2 Applications ........................................................... 1
3 Description ............................................................. 1
4 Revision History..................................................... 2
5 Description (Continued)........................................ 3
6 Pin Configuration and Functions......................... 3
7 Specifications......................................................... 5
7.1 Absolute Maximum Ratings ...................................... 5
7.2 ESD Ratings.............................................................. 5
7.3 Recommended Operating Conditions....................... 6
7.4 Thermal Information.................................................. 6
7.5 Electrical Characteristics........................................... 7
7.6 Typical Characteristics............................................ 12
8 Detailed Description............................................ 13
8.1 Overview ................................................................. 13
8.2 Functional Block Diagram ....................................... 14
8.3 Feature Description................................................. 14
8.4 Device Functional Modes........................................ 21
8.5 Register Maps......................................................... 47
9 Application and Implementation ........................ 64
9.1 Application Information............................................ 64
9.2 Typical Application ................................................. 64
10 Power Supply Recommendations ..................... 67
11 Layout................................................................... 67
11.1 Layout Guidelines ................................................. 67
11.2 Layout Example .................................................... 67
12 Device and Documentation Support ................. 68
12.1 Trademarks........................................................... 68
12.2 Electrostatic Discharge Caution............................ 68
12.3 Receiving Notification of Documentation Updates 68
12.4 Community Resources.......................................... 68
12.5 Glossary................................................................ 68
13 Mechanical, Packaging, and Orderable
Information ........................................................... 68
4 Revision History
Changes from Original (June 2017) to Revision A Page
• Updated timing information for entering and exiting sleep mode and standby mode ............................................................ 8
• Added Analog and PWM mode timing diagrams.................................................................................................................. 10
• Updated naming convention in Step-Down Regulator subsection ....................................................................................... 14
• Changed the Conditions to Enter or Exit Sleep or Standby Condition table to reflect Electrical Characteristics
parameter names.................................................................................................................................................................. 18
• Added Speed pin note to Table 1 ........................................................................................................................................ 19
• Added subsection, Required Sequence to Enter Sleep Mode............................................................................................. 19
• Changed Figure 13 and Figure 14 ....................................................................................................................................... 21
• Changed Table 4 ................................................................................................................................................................. 24
• Updated Inductive AVS Function subsection ....................................................................................................................... 41
• Changed eeWRnEn field description to properly reflect actual function .............................................................................. 55
• Changed BEMF comparator hysteresis to reflect Electrical Characteristics specifications ................................................. 58
• Changed Table 36 ............................................................................................................................................................... 65
• Added EEprom note to Layout Guidelines ........................................................................................................................... 67
Not to scale
Thermal
Pad
1VCP 24 VCC
2CPP 23 VCC
3CPN 22 W
4SW 21 W
5SWGND 20 V
6VREG 19 V
7V1P8 18 U
8GND 17 U
9V3P3 16 PGND
10SCL 15 PGND
11SDA 14 DIR
12FG 13 SPEED
3
DRV10983-Q1
www.ti.com
SLVSD14A –JUNE 2017–REVISED JUNE 2020
Product Folder Links: DRV10983-Q1
Submit Documentation FeedbackCopyright © 2017–2020, Texas Instruments Incorporated
5 Description (Continued)
The DRV10983-Q1 device uses a proprietary sensorless control scheme to provide continuous sinusoidal drive,
which significantly reduces the pure tone acoustics that typically occur as a result of commutation. The interface
to the device is designed to be simple and flexible. The motor can be controlled directly through PWM, analog, or
I
2
C inputs. Motor speed feedback is available through both the FG pin and the I
2
C interface simultaneously.
The DRV10983-Q1 device features an integrated buck regulator to step down the supply voltage efficiently to 5 V
for powering both internal and external circuits. The 3.3-V LDO also may be used to provide power for external
circuits. The device is available in either a sleep mode or a standby mode version to conserve power when the
motor is not running. The standby mode (8.5 mA) version (DRV10983SQ) leaves the regulator running and the
sleep mode (48 μA) version (DRV10983Q) shuts the regulator off. Use the standby mode version in applications
where the regulator is used to power an external microcontroller. Throughout this data sheet, the DRV10983-Q1
part number is used for both devices for example DRV10983Q (sleep version) and DRV10983SQ (standby
version), except for specific discussions of sleep vs standby functionality.
An I
2
C interface allows the user to reprogram specific motor parameters in registers and to program the
EEPROM to help optimize the performance for a given application. The DRV10983-Q1 device is available in a
thermally-efficient HTSSOP, 24-pin package with an exposed thermal pad. The operating ambient temperature is
specified from –40°C to 125°C.
6 Pin Configuration and Functions
PWP PowerPAD™ Package
24-Pin HTSSOP With Exposed Thermal Pad
Top View
4
DRV10983-Q1
SLVSD14A –JUNE 2017 –REVISED JUNE 2020
www.ti.com
Product Folder Links: DRV10983-Q1
Submit Documentation Feedback Copyright © 2017–2020, Texas Instruments Incorporated
(1) I = Input, O = Output, I/O = Input/output, NC = No connect, P = Power
Pin Functions
PIN
TYPE
(1)
DESCRIPTION
N/AME HTSSOP
CPN 3 P Charge pump pin 1, use a ceramic capacitor between CPN and CPP
CPP 2 P Charge pump pin 2, use a ceramic capacitor between CPN and CPP
DIR 14 I
Direction;
When low, phase driving sequence is U → V → W
When high, phase driving sequence is U → W → V
FG 12 O FG signal output indicates speed of motor
GND 8 P Digital and analog ground
PGND 15, 16 P Power ground
SCL 10 I I
2
C clock signal
SDA 11 I/O I
2
C data signal
SPEED 13 I Speed control signal for PWM or analog input speed command
SW 4 O Step-down regulator switching node output
SWGND 5 P Step-down regulator ground
U 17, 18 O Motor U phase
V 19, 20 O Motor V phase
V1P8 7 P
Internal 1.8-V digital core voltage. V1P8 capacitor must connect to GND. This is an output, but is not
specified to drive external loads.
V3P3 9 P
Internal 3.3-V supply voltage. V3P3 capacitor must connect to GND. This is an output and may drive
external loads not to exceed I
V3P3_MAX
.
V
CC
23, 24 P Device power supply
VCP 1 P Charge pump output, use a ceramic capacitor between VCP and V
CC
VREG 6 P Step-down regulator output and feedback point
W 21, 22 O Motor W phase
Thermal pad
(GND)
— P
The exposed thermal pad must be electrically connected to the ground plane by soldering to the PCB
for proper operation, and connected to the bottom side of the PCB through vias for better thermal
spreading.
5
DRV10983-Q1
www.ti.com
SLVSD14A –JUNE 2017–REVISED JUNE 2020
Product Folder Links: DRV10983-Q1
Submit Documentation FeedbackCopyright © 2017–2020, Texas Instruments Incorporated
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings
only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended
Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2) All voltage values are with respect to the ground terminal (GND) unless otherwise noted.
7 Specifications
7.1 Absolute Maximum Ratings
over operating ambient temperature range
(1)
MIN MAX UNIT
Input voltage
(2)
V
CC
–0.3 28
V
V
CC
during load dump (V
CC
slew rate < 1 V/µs) –0.3 45
SPEED –0.3 4
PGND, SWGND –0.3 0.3
SCL, SDA –0.3 4
DIR –0.3 4
Output voltage
(2)
U, V, W –1 30
V
SW –1 30
VREG –0.3 7
FG –0.3 4
VCP –0.3 V
CC
+ 6
CPN –0.3 30
CPP –0.3 V
CC
+ 6
V3P3 –0.3 4
V1P8 –0.3 2.5
T
J_MAX
Maximum junction temperature –40 150 °C
T
stg
Storage temperature –55 150 °C
(1) AEC Q100-002 indicates that HBM stressing shall be in accordance with the ANSI/ESDA/JEDEC JS-001 specification.
7.2 ESD Ratings
VALUE UNIT
V
(ESD)
Electrostatic
discharge
Human body model (HBM), per AEC Q100-002, all pins
(1)
±2000
V
Charged device model (CDM), per AEC Q100-011, all pins ±750
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