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An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,

intellectual property matters and other important disclaimers. PRODUCTION DATA.

English Data Sheet: SLIS164

DRV5033-Q1

ZHCSEF6E –DECEMBER 2014–REVISED SEPTEMBER 2016

DRV5033-Q1 汽汽车车类类数数字字全全极极开开关关霍霍尔尔效效应应传传感感器器

1 特特性性

• 数字全极开关霍尔传感器

• 符合汽车类应用的 AEC-Q100 标准

– 1 级：T

= –40 至 125°C（Q，请见图 23）

– 0 级：T

= –40 至 150°C（E，请见图 23）

• 出色的温度稳定性

– 在温度范围内 B

±10%

• 多种灵敏度选项 (B

)：

– ±3.5/±2mT（FA，请参见图 23）

– ±6.9/±3.5mT（AJ，请参见图 23）

• 检测南北磁场

• 支持宽电压范围

– 2.7V 至 38V

– 无需外部稳压器

• 开漏输出（30mA 灌电流）

• 35µs 快速上电时间

• 小型封装尺寸

– 表面贴装 3 引脚小外形尺寸晶体管 (SOT)-23

(DBZ)

– 2.92mm × 2.37mm

– 插入式 3 引脚 TO-92 (LPG)

– 4.00mm × 3.15mm

• 保保护护特特性性

– 反向电源保护（高达 -22V）

– 支持高达 40V 抛负载

– 输出短路保护

– 输出电流限制

– 电池输出短路保护

2 应应用用

• 对接检测

• 门开关检测

• 接近感测

• 阀定位

• 脉冲计数

3 说说明明

DRV5033-Q1 器件是一款斩波稳定霍尔效应传感器，

能够在整个温度范围内提供具有出色灵敏度稳定性和集

成保护特性的磁场感测功能。

DRV5033-Q1 对磁场两极方向的响应相同。当应用的

磁通量密度超过 B

阈值时，DRV5033-Q1 开漏输出

变为低电平。输出将保持低电平，直到磁通量密度降至

以下之后变为高阻抗。输出灌电流能力为 30mA。

反向极性保护高达 -22V 的宽工作电压范围（2.7 至

38V）使得此器件广泛适用于各种汽车信号。

该器件提供针对反向电源情况、负载突降以及输出短路

或过流故障的内部保护功能。

器器件件信信息息

(1)

器器件件型型号号封封装装封封装装尺尺寸寸（（标标称称值值））

DRV5033-Q1

SOT-23 (3) 2.92mm × 1.30mm

TO-92 (3) 4.00mm × 3.15mm

(1) 要了解所有可用封装，请见数据表末尾的可订购产品附录。

输输出出状状态态

SOT-23 TO-92

DRV5033-Q1

ZHCSEF6E –DECEMBER 2014–REVISED SEPTEMBER 2016

www.ti.com.cn

目目录录

1 特特性性.......................................................................... 1

2 应应用用.......................................................................... 1

3 说说明明.......................................................................... 1

4 修修订订历历史史记记录录 ........................................................... 2

5 Pin Configuration and Functions......................... 3

6 Specifications......................................................... 4

6.1 Absolute Maximum Ratings ...................................... 4

6.2 ESD Ratings.............................................................. 4

6.3 Recommended Operating Conditions....................... 4

6.4 Thermal Information.................................................. 4

6.5 Electrical Characteristics........................................... 5

6.6 Switching Characteristics.......................................... 5

6.7 Magnetic Characteristics........................................... 5

6.8 Typical Characteristics.............................................. 6

7 Detailed Description.............................................. 8

7.1 Overview ................................................................... 8

7.2 Functional Block Diagram ......................................... 8

7.3 Feature Description................................................... 9

7.4 Device Functional Modes........................................ 14

8 Application and Implementation ........................ 15

8.1 Application Information............................................ 15

8.2 Typical Applications ................................................ 15

9 Power Supply Recommendations...................... 17

10 器器件件和和文文档档支支持持 ..................................................... 18

10.1 器件支持................................................................ 18

10.2 社区资源................................................................ 19

10.3 商标 ....................................................................... 19

10.4 静电放电警告......................................................... 19

10.5 Glossary................................................................ 19

11 机机械械、、封封装装和和可可订订购购信信息息....................................... 19

4 修修订订历历史史记记录录

注：之前版本的页码可能与当前版本有所不同。

Changes from Revision D (May 2016) to Revision E Page

• Made changes to the Power-on time in the Electrical Characteristics table ......................................................................... 5

Changes from Revision C (February 2016) to Revision D Page

• Revised preliminary limits for the FA version ......................................................................................................................... 5

Changes from Revision B (December 2015) to Revision C Page

• 已添加 FA 器件选项 ................................................................................................................................................................ 1

• Added the typical bandwidth value to the Magnetic Characteristics table ............................................................................. 5

Changes from Revision A (May 2015) to Revision B Page

• 已更正 SOT-23 封装体尺寸并将 SIP 封装名称更正为 TO-92 ................................................................................................ 1

• Added B

MAX

to Absolute Maximum Ratings ........................................................................................................................... 4

• Removed table notes regarding testing for the operating junction temperature in Absolute Maximum Ratings .................. 4

• 已更新封装卷带选项 M 和空白.............................................................................................................................................. 18

• 已添加

社区资源

.................................................................................................................................................................. 19

Changes from Original (December 2014) to Revision A Page

• 已将器件状态更新为量产数据 ................................................................................................................................................ 1

DRV5033-Q1

ZHCSEF6E –DECEMBER 2014–REVISED SEPTEMBER 2016

www.ti.com.cn

(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings

only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended

Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

(2) Ensured by design. Only tested to –20 V.

6 Specifications

6.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted)

(1)

MIN MAX UNIT

Power supply voltage

–22

(2)

40 V

Voltage ramp rate (V

), V

< 5 V Unlimited

V/µs

Voltage ramp rate (V

), V

> 5 V 0 2

Output pin voltage –0.5 40 V

Output pin reverse current during reverse supply condition 0 100 mA

Magnetic flux density, B

MAX

Unlimited

Operating junction temperature, T

Q, see 图 23 –40 150

°C

E, see 图 23 –40 17

Storage temperature, T

stg

–65 150 °C

(1) AEC Q100-002 indicates that HBM stressing shall be in accordance with the ANSI/ESDA/JEDEC JS-001 specification.

6.2 ESD Ratings

VALUE UNIT

(ESD)

Electrostatic discharge

Human-body model (HBM), per AEC Q100-002

(1)

±2500

Charged-device model (CDM), per AEC Q100-011 ±500

(1) Power dissipation and thermal limits must be observed

6.3 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)

MIN MAX UNIT

Power supply voltage 2.7 38 V

Output pin voltage (OUT) 0 38 V

SINK

Output pin current sink (OUT)

(1)

0 30 mA

Operating ambient

temperature

Q, see 图 23 –40 125

°C

E, see 图 23 –40 150

(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application

report, SPRA953.

6.4 Thermal Information

THERMAL METRIC

(1)

DRV5033-Q1

UNITDBZ (SOT-23) LPG (TO-92)

3 PINS 3 PINS

θJA

Junction-to-ambient thermal resistance 333.2 180 °C/W

θJC(top)

Junction-to-case (top) thermal resistance 99.9 98.6 °C/W

θJB

Junction-to-board thermal resistance 66.9 154.9 °C/W

Junction-to-top characterization parameter 4.9 40 °C/W

Junction-to-board characterization parameter 65.2 154.9 °C/W

剩余31页未读，继续阅读

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