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TI-DRV5015-Q1.pdf
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TI-DRV5015-Q1.pdf
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V
CC
ControllerDRV5015
V
CC
GND
OUT
DRV5015
V
CC
GND
OUT
V
CC
V
CC
GPIO
GPIO
B
southnorth 0 mT
B
OP
0V
V
CC
B
RP
B
HYS
B
southnorth 0 mT
B
OP
0V
V
CC
B
RP
B
HYS
DRV5015A1, DRV5015A2
DRV5015A3
OUT
OUT
Product
Folder
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Technical
Documents
Tools &
Software
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本文档旨在为方便起见,提供有关 TI 产品中文版本的信息,以确认产品的概要。 有关适用的官方英文版本的最新信息,请访问 www.ti.com,其内容始终优先。 TI 不保证翻译的准确
性和有效性。 在实际设计之前,请务必参考最新版本的英文版本。
English Data Sheet: SBAS916
DRV5015-Q1
ZHCSIS4B –SEPTEMBER 2018–REVISED APRIL 2019
DRV5015-Q1汽汽车车低低电电压压高高灵灵敏敏度度数数字字锁锁存存器器霍霍尔尔效效应应传传感感器器
1
1 特特性性
1
• 适用于汽车 应用
• 具有符合 AEC-Q100 标准的下列结果:
– 器件温度等级 0:–40°C 至 150°C 的环境工作
温度范围
– 器件 HBM ESD 分类等级 H3A
– 器件 CDM ESD 分类等级 C6
• 数字锁存器霍尔效应传感器
• 高磁性灵敏度:
– DRV5015A1-Q1:±0.7mT(典型值)
– DRV5015A2-Q1:±1.8mT(典型值)
– DRV5015A3-Q1:±1.8mT(反相,典型值)
• 集成迟滞
• 30kHz 高速感应带宽
• 2.5V 至 5.5V 工作 V
CC
范围
• 开漏输出,输出电流高达 20mA
2 应应用用
• 无刷直流电机传感器:
– 燃油泵
– 电子助力转向
– 电动天窗
– 车窗
– 滑动门
• 增量旋转编码:
– 电机速度(转速计)
– 机械行程
– 流体测量
– 人机界面旋钮
– 轮速
典典型型原原理理图图
3 说说明明
DRV5015-Q1 是一款低电压数字锁存器霍尔效应传感
器,专为高速和高温电机 应用。该器件由
2.5V 至 5.5V 的电源供电,可以检测磁通量密度并根
据预定义的磁性阈值显示数字输出。
必须交换北极和南极磁极才能切换输出,集成的磁滞能
够提供稳定可靠的切换。
该器件具有两个磁性阈值选项和一个反相输出选项。高
磁性灵敏度可提供低成本磁体选择和组件放置灵活性。
该器件在 –40°C 至 +150°C 的宽环境温度范围内能够
保持稳定一致的优异性能。
器器件件信信息息
(1)
器器件件型型号号 封封装装 封封装装尺尺寸寸((标标称称值值))
DRV5015-Q1 SOT-23 (3) 2.92mm × 1.30mm
(1) 如需了解所有可用封装,请参阅数据表末尾的封装选项附录。
磁磁响响应应
2
DRV5015-Q1
ZHCSIS4B –SEPTEMBER 2018–REVISED APRIL 2019
www.ti.com.cn
Copyright © 2018–2019, Texas Instruments Incorporated
目目录录
1 特特性性.......................................................................... 1
2 应应用用.......................................................................... 1
3 说说明明.......................................................................... 1
4 修修订订历历史史记记录录 ........................................................... 2
5 Pin Configuration and Functions......................... 3
6 Specifications......................................................... 3
6.1 Absolute Maximum Ratings ...................................... 3
6.2 ESD Ratings.............................................................. 3
6.3 Recommended Operating Conditions....................... 4
6.4 Thermal Information.................................................. 4
6.5 Electrical Characteristics........................................... 4
6.6 Magnetic Characteristics........................................... 4
6.7 Typical Characteristics.............................................. 5
7 Detailed Description.............................................. 7
7.1 Overview ................................................................... 7
7.2 Functional Block Diagram ......................................... 7
7.3 Feature Description................................................... 7
7.4 Device Functional Modes........................................ 12
8 Application and Implementation ........................ 13
8.1 Application Information............................................ 13
8.2 Typical Applications ................................................ 13
8.3 What to Do and What Not to Do ............................. 16
9 Power Supply Recommendations...................... 17
10 Layout................................................................... 17
10.1 Layout Guidelines ................................................. 17
10.2 Layout Example .................................................... 17
11 器器件件和和文文档档支支持持 ..................................................... 18
11.1 文档支持................................................................ 18
11.2 接收文档更新通知 ................................................. 18
11.3 社区资源................................................................ 18
11.4 商标 ....................................................................... 18
11.5 静电放电警告......................................................... 18
11.6 术语表 ................................................................... 18
12 机机械械、、封封装装和和可可订订购购信信息息....................................... 18
4 修修订订历历史史记记录录
Changes from Revision A (November 2018) to Revision B Page
• Changed output voltage max value from V
CC
+ 0.3 V to 6.0 V in the Absolute Maximum Ratings table .............................. 3
• Changed T
A
= –40℃ to +150℃ min and max values in Magnetic Characteristics table ....................................................... 4
• Added T
A
= –40℃ to +125℃ limits to the Magnetic Characteristics table............................................................................. 4
Changes from Original (September 2018) to Revision A Page
• 已更改 maximum temperature inside the motor from 125°C to 150°C in Table 1 ............................................................... 13
1VCC
2OUT
3 GND
Not to scale
3
DRV5015-Q1
www.ti.com.cn
ZHCSIS4B –SEPTEMBER 2018 –REVISED APRIL 2019
Copyright © 2018–2019, Texas Instruments Incorporated
5 Pin Configuration and Functions
DBZ Package
3-Pin SOT-23
Top View
Pin Functions
PIN
TYPE DESCRIPTION
NAME NO.
GND 3 Ground Ground reference.
OUT 2 Output Open-drain output.
VCC 1 Power supply
2.5-V to 5.5-V power supply. Connect a ceramic capacitor with a value of at least 0.01 µF
between VCC and ground.
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings
only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended
Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
6 Specifications
6.1 Absolute Maximum Ratings
over operating free-air temperature range (unless otherwise noted)
(1)
MIN MAX UNIT
V
CC
Power supply voltage –0.3 6.0 V
V
OUT
Output voltage –0.3 6.0 V
I
OUT
Output current 30 mA
B
MAX
Magnetic flux density Unlimited T
T
J
Operating junction temperature –40 170 °C
T
stg
Storage temperature –65 150 °C
(1) AEC Q100-002 indicates that HBM stressing shall be in accordance with the ANSI/ESDA/JEDEC JS-001 specification.
6.2 ESD Ratings
over operating free-air temperature range (unless otherwise noted)
VALUE UNIT
V
(ESD)
Electrostatic discharge
Human body model (HBM), per AEC Q100-002
(1)
±5000
V
Charged device model (CDM), per AEC Q100-011 ±1500
4
DRV5015-Q1
ZHCSIS4B –SEPTEMBER 2018–REVISED APRIL 2019
www.ti.com.cn
Copyright © 2018–2019, Texas Instruments Incorporated
6.3 Recommended Operating Conditions
over operating free-air temperature range (unless otherwise noted)
MIN MAX UNIT
V
CC
Power supply voltage 2.5 5.5 V
V
OUT
Output pin voltage 0 5.5 V
I
OUT
Output sinking current 0 20 mA
T
A
Operating ambient temperature –40 150 °C
(1) For information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report.
6.4 Thermal Information
THERMAL METRIC
(1)
DRV5015-Q1
UNITSOT-23 (DBZ)
3 PINS
R
θJA
Junction-to-ambient thermal resistance 356 °C/W
R
θJC(top)
Junction-to-case (top) thermal resistance 128 °C/W
R
θJB
Junction-to-board thermal resistance 94 °C/W
Y
JT
Junction-to-top characterization parameter 11.4 °C/W
Y
JB
Junction-to-board characterization parameter 92 °C/W
(1) See the Propagation Delay section for more information.
6.5 Electrical Characteristics
at V
CC
= 2.5 V to 5.5 V, over operating free-air temperature range (unless otherwise noted)
PARAMETER TEST CONDITION MIN TYP MAX UNIT
I
CC
Operating supply current 2.3 2.8 mA
t
ON
Power-on time 40 70 µs
t
d
Propagation delay time
(1)
B = B
RP
– 10 mT to B
OP
+ 10 mT in 1 µs 13 25 µs
I
OZ
High-impedance output leakage
current
5.5 V applied to OUT, while OUT is high-
impedance
100 nA
V
OL
Low-level output voltage I
OUT
= 20 mA 0.15 0.4 V
6.6 Magnetic Characteristics
at V
CC
= 2.5 V to 5.5 V, over operating free-air temperature range (unless otherwise noted)
PARAMETER TEST CONDITION MIN TYP MAX UNIT
DRV5015A1-Q1, DRV5015A2-Q1, DRV5015A3-Q1
f
BW
Sensing bandwidth 20 30 kHz
DRV5015A1-Q1
B
OP
Magnetic threshold operate point
T
A
= –40°C to +125°C –0.2 0.7 2.0 mT
T
A
= –40°C to +150°C –0.5 0.7 2.9 mT
B
RP
Magnetic threshold release point
T
A
= –40°C to +125°C –2.0 –0.7 0.2 mT
T
A
= –40°C to +150°C –2.9 –0.7 0.5 mT
B
HYS
Magnetic hysteresis: |B
OP
– B
RP
| T
A
= –40°C to +125°C 0.35 1.4 mT
B
HYS
Magnetic hysteresis: |B
OP
– B
RP
| T
A
= –40°C to +150°C 0.3 1.4 mT
DRV5015A2-Q1, DRV5015A3-Q1
B
OP
Magnetic threshold operate point
T
A
= –40°C to +125°C 0.5 1.8 3.7 mT
T
A
= –40°C to +150°C 0.2 1.8 4.5 mT
B
RP
Magnetic threshold release point
T
A
= –40°C to +125°C –3.7 –1.8 –0.5 mT
T
A
= –40°C to +150°C –4.5 –1.8 –0.2 mT
B
HYS
Magnetic hysteresis: |B
OP
– B
RP
| T
A
= –40°C to +125°C 2.3 3.6 mT
B
HYS
Magnetic hysteresis: |B
OP
– B
RP
| T
A
= –40°C to +150°C 1.75 3.6 mT
Ambient Temperature (qC)
Operating Supply Current (mA)
-40 -20 0 20 40 60 80 100 120 140 160
0
0.5
1
1.5
2
2.5
3
3.5
4
D005
V
CC
= 2.5 V
V
CC
= 4 V
V
CC
= 5.5 V
Ambient Temperature (qC)
Magnetic Threshold Release Point (mT)
-40 -20 0 20 40 60 80 100 120 140 160
-3
-2
-1
0
1
2
3
D006
BOP
Operating Supply Voltage (V)
Magnetic Threshold Operate Point (mT)
2.5 3 3.5 4 4.5 5 5.5
-2
-1
0
1
2
D003
BOP
Operating Supply Voltage (V)
Magnetic Threshold Release Point (mT)
2.5 3 3.5 4 4.5 5 5.5
-2
-1.5
-1
-0.5
0
0.5
1
1.5
2
D004
BRP
Ambeint Temperature (qC)
Magnetic Threshold Operate Point (mT)
-40 -20 0 20 40 60 80 100 120 140 160
-2
-1
0
1
2
D001
BOP
Ambient Temperature (qC)
Magnetic Threshold Release Point (mT)
-40 -20 0 20 40 60 80 100 120 140 160
-2
-1
0
1
2
D002
BRP
5
DRV5015-Q1
www.ti.com.cn
ZHCSIS4B –SEPTEMBER 2018 –REVISED APRIL 2019
版权 © 2018–2019, Texas Instruments Incorporated
6.7 Typical Characteristics
at T
A
= 25°C typical (unless otherwise noted)
图图 1. B
OP
Threshold vs Temperature (DRV5015A1-Q1) 图图 2. B
RP
Threshold vs Temperature (DRV5015A1-Q1)
图图 3. B
OP
Threshold vs Supply Voltage (DRV5015A1-Q1) 图图 4. B
RP
Threshold vs Supply Voltage (DRV5015A1-Q1)
图图 5. I
CC
vs Temperature (DRV5015A1-Q1) 图图 6. B
OP
Threshold vs Temperature
(DRV5015A2-Q1, DRV5015A3-Q1)
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