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TI-DRV5021-Q1.pdf
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TI-DRV5021-Q1.pdf
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OUT
DRV5021-Q1
GPIO
V
CC
Controller
V
CC
GND
OUT
B
OP
B
RP
B
OF
B
hys
B (mT)
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本文档旨在为方便起见,提供有关 TI 产品中文版本的信息,以确认产品的概要。 有关适用的官方英文版本的最新信息,请访问 www.ti.com,其内容始终优先。 TI 不保证翻译的准确
性和有效性。 在实际设计之前,请务必参考最新版本的英文版本。
English Data Sheet: SBAS914
DRV5021-Q1
ZHCSHJ6 –FEBRUARY 2019
DRV5021-Q1 汽汽车车用用、、低低电电压压、、单单极极、、数数字字开开关关霍霍尔尔效效应应传传感感器器
1
1 特特性性
1
• 适用于汽车电子 应用
• 下列性能符合 AEC-Q100 标准:
– 器件温度等级 0:–40°C 至 150°C 环境工作温
度范围
– 器件 HBM ESD 分类等级 3A
– 器件 CDM ESD 分类等级 C6
• 数字单极开关霍尔传感器
• 2.5V 至 5.5V 工作 V
CC
范围
• 磁性灵敏度选项 (B
OP
,B
RP
):
– DRV5021A1-Q1:2.9mT、1.8mT
– DRV5021A2-Q1:9.2mT、7.0mT
– DRV5021A3-Q1:17.9mT、14.1mT
• 30kHz 高速感应带宽
• 漏极开路输出电流高达 20mA
• 经过优化的低电压架构
• 具有集成迟滞特性,可增强抗噪能力
• 标准行业封装:
– 表面贴装 SOT-23
2 应应用用
• 汽车变速器、车身外壳
• 限位开关
• 一般接近感应
• 刷式直流电机反馈
• 门开关检测
• 阀定位
• 脉冲计数
3 说说明明
DRV5021-Q1 是一款低电压数字开关霍尔效应传感
器,适用于高速汽车 应用。该器件由 2.5V 至 5.5V 的
电源供电,可以检测磁通量密度并根据预定义的磁性阈
值提供数字输出。
该器件会检测垂直于封装面的磁场。当施加的磁通量密
度超过磁运行点 B
OP
阈值时,器件的漏极开路输出将
驱动低电压。当磁通量密度降至磁释放点 (B
RP
) 阈值
时,输出会变为高阻抗。B
OP
和 B
RP
的分离所产生的
滞后有助于防止输入噪声引起的输出误差。这种配置使
得系统设计能够更加稳健地抵抗噪声干扰。
该器件可在 –40°C 至 +150°C 的宽环境温度范围内保
持稳定的优异性能。
器器件件信信息息
(1)
器器件件型型号号 封封装装 封封装装尺尺寸寸((标标称称值值))
DRV5021-Q1 SOT-23 (3) 2.90mm x 1.30mm
(1) 如需了解所有可用封装,请参阅数据表末尾的封装选项附录。
典典型型应应用用电电路路原原理理图图 磁磁响响应应
2
DRV5021-Q1
ZHCSHJ6 –FEBRUARY 2019
www.ti.com.cn
Copyright © 2019, Texas Instruments Incorporated
目目录录
1 特特性性.......................................................................... 1
2 应应用用.......................................................................... 1
3 说说明明.......................................................................... 1
4 修修订订历历史史记记录录 ........................................................... 2
5 Pin Configuration and Functions......................... 3
6 Specifications......................................................... 3
6.1 Absolute Maximum Ratings ...................................... 3
6.2 ESD Ratings.............................................................. 3
6.3 Recommended Operating Conditions....................... 4
6.4 Thermal Information.................................................. 4
6.5 Electrical Characteristics........................................... 4
6.6 Magnetic Characteristics........................................... 4
6.7 Typical Characteristics.............................................. 5
7 Detailed Description.............................................. 7
7.1 Overview ................................................................... 7
7.2 Functional Block Diagram ......................................... 7
7.3 Feature Description................................................... 7
7.4 Device Functional Modes........................................ 13
8 Application and Implementation ........................ 14
8.1 Application Information............................................ 14
8.2 Typical Applications ................................................ 14
9 Power Supply Recommendations...................... 17
10 Layout................................................................... 17
10.1 Layout Guidelines ................................................. 17
10.2 Layout Example .................................................... 17
11 器器件件和和文文档档支支持持 ..................................................... 18
11.1 文档支持................................................................ 18
11.2 接收文档更新通知 ................................................. 18
11.3 社区资源................................................................ 18
11.4 商标 ....................................................................... 18
11.5 静电放电警告......................................................... 18
11.6 术语表 ................................................................... 18
12 机机械械、、封封装装和和可可订订购购信信息息....................................... 18
4 修修订订历历史史记记录录
注:之前版本的页码可能与当前版本有所不同。
日日期期 修修订订版版本本 说说明明
2019 年 2 月 * 初始发行版。
1VCC
2OUT
3 GND
Not to scale
3
DRV5021-Q1
www.ti.com.cn
ZHCSHJ6 –FEBRUARY 2019
Copyright © 2019, Texas Instruments Incorporated
5 Pin Configuration and Functions
DBZ Package
3-Pin SOT-23
Top View
Pin Functions
PIN
TYPE DESCRIPTION
NAME DBZ
GND 3 GND Ground pin
OUT 2 Output Hall sensor open-drain output. The open drain requires a pullup resistor.
V
CC
1 Power
2.5-V to 5.5-V power supply. Bypass this pin to the GND pin with a 0.1-μF (minimum) ceramic
capacitor rated for V
CC
.
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings
only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended
Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
6 Specifications
6.1 Absolute Maximum Ratings
over operating free-air temperature range (unless otherwise noted)
(1)
MIN MAX UNIT
Power supply voltage (VCC) –0.3 6.0 V
Output voltage (OUT) –0.3 6.0 V
Output current (OUT) 30 mA
Magnetic flux density, B
MAX
Unlimited T
Operating junction temperature, T
J
–40 170 °C
Storage temperature, T
stg
–65 150 °C
(1) AEC Q100-002 indicates that HBM stressing shall be in accordance with the ANSI/ESDA/JEDEC JS-001 specification.
6.2 ESD Ratings
over operating free-air temperature range (unless otherwise noted)
VALUE UNIT
V
(ESD)
Electrostatic discharge
Human body model (HBM), per AEC
Q100-002
(1)
±6000
V
Charged device model (CDM), per AEC
Q100-011
±1000
4
DRV5021-Q1
ZHCSHJ6 –FEBRUARY 2019
www.ti.com.cn
Copyright © 2019, Texas Instruments Incorporated
6.3 Recommended Operating Conditions
over operating free-air temperature range (unless otherwise noted)
MIN MAX UNIT
V
CC
Power supply voltage range 2.5 5.5 V
V
O
Output pin voltage 0 5.5 V
I
OUT
Output sinking current 0 20 mA
T
A
Operating ambient temperature –40 150 °C
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application
report.
6.4 Thermal Information
THERMAL METRIC
(1)
DRV5021-Q1
UNITSOT-23 (DBZ)
3 PINS
R
θJA
Junction-to-ambient thermal resistance 356 °C/W
R
θJC(top)
Junction-to-case (top) thermal resistance 128 °C/W
R
θJB
Junction-to-board thermal resistance 94 °C/W
Y
JT
Junction-to-top characterization parameter 11.4 °C/W
Y
JB
Junction-to-board characterization parameter 92 °C/W
(1) See the Propagation Delay section for more information.
6.5 Electrical Characteristics
at V
CC
= 2.5 V to 5.5 V, over operating free-air temperature range (unless otherwise noted)
PARAMETER TEST CONDITION MIN TYP MAX UNIT
I
CC
Operating supply current 2.3 2.8 mA
t
ON
Power-on time 40 70 µs
t
d
Propagation delay time
(1)
B = B
RP
– 10 mT to B
OP
+ 10 mT in
1 µs
13 25 µs
I
OZ
High-impedance output leakage
current
5.5 V applied to OUT, while OUT is
high-impedance
100 nA
V
OL
Low-level output voltage I
OUT
= 20 mA 0.15 0.4 V
R
DS(on)
Output FET resistance I
OUT
= 5 mA, V
CC
= 3.3 V 8 Ω
6.6 Magnetic Characteristics
at V
CC
= 2.5 V to 5.5 V, over operating free-air temperature range (unless otherwise noted)
PARAMETER TEST CONDITION MIN TYP MAX UNIT
DRV5021A1-Q1, DRV5021A2-Q1, DRV5021A3-Q1
f
BW
Sensing bandwidth 30 kHz
DRV5021A1-Q1
B
OP
Magnetic threshold Operate Point
T
A
= –40°C to +125°C 1.3 2.9 4.4 mT
T
A
= –40°C to +150°C 1.1 2.9 4.7 mT
B
RP
Magnetic threshold Release Point
TA = –40°C to +125°C 0.2 1.8 3.0 mT
T
A
= –40°C to +150°C 0.1 1.8 3.3 mT
B
HYS
Magnetic hysteresis: |B
OP
– B
RP
| TA = –40°C to +125°C 0.1 1.1 2.5 mT
B
HYS
Magnetic hysteresis: |B
OP
– B
RP
| T
A
= –40°C to +150°C 0.1 1.1 2.8 mT
DRV5021A2-Q1
B
OP
Magnetic threshold Operate Point
T
A
= –40°C to +125°C 5.0 9.2 13.0 mT
T
A
= –40°C to +150°C 4.5 9.2 14.0 mT
B
RP
Magnetic threshold Release Point
T
A
= –40°C to +125°C 3.2 7.0 10.0 mT
T
A
= –40°C to +150°C 2.7 7.0 11.0 mT
Temperature (qC)
Magnetic Field (mT)
-40 -20 0 20 40 60 80 100 120 140
0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
D002
BOP
BRP
HYSTERESIS
Temperature (qC)
Magnetic Field (mT)
-40 -20 0 20 40 60 80 100 120 140
0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
D005
BOP
BRP
HYSTERESIS
Temperature (qC)
Magnetic Field (mT)
-40 -20 0 20 40 60 80 100 120 140
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
D001
BOP
BRP
HYSTERESIS
Temperature (qC)
Magnetic Field (mT)
-40 -20 0 20 40 60 80 100 120 140
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
D002
BOP
BRP
HYSTERESIS
5
DRV5021-Q1
www.ti.com.cn
ZHCSHJ6 –FEBRUARY 2019
版权 © 2019, Texas Instruments Incorporated
Magnetic Characteristics (continued)
at V
CC
= 2.5 V to 5.5 V, over operating free-air temperature range (unless otherwise noted)
PARAMETER TEST CONDITION MIN TYP MAX UNIT
B
HYS
Magnetic hysteresis: |B
OP
– B
RP
| T
A
= –40°C to +125°C 0.9 2.2 4.5 mT
B
HYS
Magnetic hysteresis: |B
OP
– B
RP
| T
A
= –40°C to +150°C 0.9 2.2 5.0 mT
DRV5021A3-Q1
B
OP
Magnetic threshold Operate Point
T
A
= –40°C to +125°C 8.8 17.9 23.4 mT
T
A
= –40°C to +150°C 7.7 17.9 25.4 mT
B
RP
Magnetic threshold Release Point
T
A
= –40°C to +125°C 6.2 14.1 18.8 mT
T
A
= –40°C to +150°C 5.1 14.1 20.8 mT
B
HYS
Magnetic hysteresis: |B
OP
– B
RP
| T
A
= –40°C to +125°C 1.5 3.8 6.2 mT
B
HYS
Magnetic hysteresis: |B
OP
– B
RP
| T
A
= –40°C to +150°C 1.3 3.8 6.7 mT
6.7 Typical Characteristics
DRV5021A1-Q1, V
CC
= 3.3 V
图图 1. Magnetic Threshold vs Temperature
DRV5021A1-Q1, V
CC
= 5.0 V
图图 2. Magnetic Threshold vs Temperature
DRV5021A2-Q1, V
CC
= 3.3 V
图图 3. Magnetic Threshold vs Temperature
DRV5021A2-Q1, V
CC
= 5.0 V
图图 4. Magnetic Threshold vs Temperature
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