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TI-UCC27212A-Q1.pdf
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An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.
English Data Sheet: SLUSCZ8
UCC27212A-Q1
ZHCSGD6 –JULY 2017
UCC27212A-Q1 汽汽车车120V 自自举举 4A 峰峰值值电电流流高高频频高高侧侧
和和低低侧侧驱驱动动器器
1
1 特特性性
1
• 符合汽车应用 要求
• 具有符合 AECA-Q100 标准的下列特性:
– 器件温度等级 –40°C 至 +140°C
– 器件 HBM 分类等级 2
– 器件 CDM 分类等级 C6
• 5V 关断欠压锁定 (UVLO)
• 通过独立输入驱动高侧和低侧配置中的两个 N 沟道
MOSFET
• 最大引导电压 120V 直流
• 4A 拉电流,4A灌电流能力
• 0.9Ω 上拉和下拉电阻
• 输入引脚能够耐受 –10V 至 +20V 的电压,并且与
电源电压范围无关
• TTL 兼容输入
• 5V 至 17V VDD 工作范围,(最大绝对值 20V)
• 7.2ns 上升时间和 5.5ns 下降时间(采用 1000pF
负载)
• 快速传播延迟时间(典型值 20ns)
• 4ns 典型延迟匹配
• 采用 SOIC8(Powerpad) 封装
2 应应用用
• 汽车应用中的 电源
• 半桥和全桥转换器
• 高电压同步降压转换器
• 双开关正向转换器
• 推挽式和有源钳位正向转换器
• D 类音频放大器
3 说说明明
UCC27212A-Q1 驱动器是基于常用的 UCC27211
MOSFET 驱动器设计的。此外,UCC27212A-Q1 具
有更宽的工作电压范围,可低至 5V,有助于降低功率
损耗。
峰值输出上拉和下拉电流分别为 4A 拉电流和 4A 灌电
流,而且上拉和下拉电阻均为 0.9Ω。这使得该器件能
够驱动大功率 MOSFET,减少由于 MOSFET 的米勒
平台导致的开关损耗。
输入结构可直接处理 -10V 电压,这提高了器件的鲁棒
性,并且无需使用整流二极管即可实现与栅极驱动变压
器直接连接。此外,输入还独立于电源电压,且具有
20V 的最大额定值。
UCC27212A-Q1 的开关节点(HS 引脚)最高可处理
-18V 电压,从而保护高侧通道不受寄生电感和杂散电
容所固有的负电压影响。UCC27212A-Q1 具有更高的
迟滞,因而支持连接至具有增强型抗噪性能的模拟或数
字 PWM 控制器。
低侧和高侧栅极驱动器是独立控制的,且彼此的开通和
关断时间均为 4ns。
由于使用了一个额定电压为 100V 的片上自举二极管,
因此无需采用外部分立式二极管。高侧和低侧驱动器均
配有欠压锁定功能,可提供对称的开通和关断行为,并
且能够在驱动电压低于额定阈值时将输出强拉至低电
平。
器器件件信信息息
(1)
器器件件型型号号 封封装装 封封装装尺尺寸寸((标标称称值值))
UCC27212A-Q1 SOIC8(Powerpad) 5.0mm x 6.0mm
(1) 如需了解所有可用封装,请参阅产品说明书末尾的可订购产品
附录。
Copyright © 2017, Texas Instruments Incorporated
PWM
CONTROLLER
CONTROL
DRIVE
LO
12 V
VDD
DRIVE
HI
UCC27212-Q1
HB
HO
HS
LO
HI
LI
100 V
ISOLATION
AND
FEEDBACK
SECONDARY
SIDE
CIRCUIT
Supply Voltage (V)
Propagation Delay (ns)
8 12 16 20
0
4
8
12
16
20
24
28
32
D001
TDLRR
TDLFF
TDHRR
TDHFF
2
UCC27212A-Q1
ZHCSGD6 –JULY 2017
www.ti.com.cn
版权 © 2017, Texas Instruments Incorporated
典典型型应应用用图图 传传播播延延迟迟与与电电源源电电压压间间的的关关系系 (T = 25°C)
3
UCC27212A-Q1
www.ti.com.cn
ZHCSGD6 –JULY 2017
版权 © 2017, Texas Instruments Incorporated
目目录录
1 特特性性.......................................................................... 1
2 应应用用.......................................................................... 1
3 说说明明.......................................................................... 1
4 修修订订历历史史记记录录 ........................................................... 4
5 Pin Configuration and Functions......................... 5
6 Specifications......................................................... 6
6.1 Absolute Maximum Ratings ...................................... 6
6.2 ESD Ratings ............................................................ 6
6.3 Recommended Operating Conditions....................... 7
6.4 Thermal Information.................................................. 7
6.5 Electrical Characteristics........................................... 7
6.6 Switching Characteristics.......................................... 8
6.7 Typical Characteristics............................................ 11
7 Detailed Description............................................ 14
7.1 Overview ................................................................. 14
7.2 Functional Block Diagram ....................................... 15
7.3 Feature Description................................................. 15
7.4 Device Functional Modes........................................ 16
8 Application and Implementation ........................ 17
8.1 Application Information............................................ 17
8.2 Typical Application ................................................. 17
9 Power Supply Recommendations...................... 21
10 Layout................................................................... 22
10.1 Layout Guidelines ................................................. 22
10.2 Layout Example .................................................... 23
11 器器件件和和文文档档支支持持 ..................................................... 24
11.1 文档支持 ............................................................... 24
11.2 接收文档更新通知 ................................................. 24
11.3 社区资源................................................................ 24
11.4 商标 ....................................................................... 24
11.5 静电放电警告......................................................... 24
11.6 Glossary................................................................ 24
12 机机械械、、封封装装和和可可订订购购信信息息....................................... 24
1VDD 8 LO
2HB 7 VSS
3HO 6 LI
4HS 5 HI
Not to scale
Thermal pad
5
UCC27212A-Q1
www.ti.com.cn
ZHCSGD6 –JULY 2017
Copyright © 2017, Texas Instruments Incorporated
5 Pin Configuration and Functions
DDA Package
8-Pin SO-PowerPAD
Top View
(1) HI or LI input is assumed to connect to a low impedance source signal. The source output impedance is assumed less than 100 Ω. If the
source impedance is greater than 100 Ω, add a bypassing capacitor, each, between HI and VSS and between LI and VSS. The added
capacitor value depends on the noise levels presented on the pins, typically from 1 nF to 10 nF should be effective to eliminate the
possible noise effect. When noise is present on two pins, HI or LI, the effect is to cause HO and LO malfunctions to have wrong logic
outputs.
(2) For cold temperature applications TI recommends the upper capacitance range. Follow the for PCB layout.
(3) The thermal pad is not directly connected to any leads of the package; however, it is electrically and thermally connected to the
substrate which is the ground of the device.
Pin Functions
PIN
TYPE DESCRIPTION
NO. NAME
2 HB P
High-side bootstrap supply. The bootstrap diode is on-chip but the external bootstrap capacitor is
required. Connect positive side of the bootstrap capacitor to this pin. Typical range of HB bypass
capacitor is 0.022 µF to 0.1 µF. The capacitor value is dependant on the gate charge of the high-
side MOSFET and must also be selected based on speed and ripple criteria.
5 HI I High-side input.
(1)
3 HO O High-side output. Connect to the gate of the high-side power MOSFET.
4 HS P
High-side source connection. Connect to source of high-side power MOSFET. Connect the
negative side of bootstrap capacitor to this pin.
6 LI I Low-side input.
(1)
8 LO O Low-side output. Connect to the gate of the low-side power MOSFET.
1 VDD P
Positive supply to the lower-gate driver. De-couple this pin to V
SS
(GND). Typical decoupling
capacitor range is 0.22 µF to 4.7 µF (See
(2)
).
7 VSS — Negative supply terminal for the device that is generally grounded.
Pad
Thermal
pad
(3)
—
Electrically referenced to V
SS
(GND). Connect to a large thermal mass trace or GND plane to
dramatically improve thermal performance.
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