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TI-LM74701-Q1.pdf
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LM74701-Q1 "TVS Less" Low IQ Reverse Battery Protection Ideal Diode Controller
1 Features
• AEC-Q100 qualified with the following results
– Device temperature grade 1:
–40°C to +125°C ambient operating
temperature range
– Device HBM ESD classification level 2
– Device CDM ESD classification level C4B
• 3.2-V to 65-V input range (3.9-V start up)
• –33-V reverse voltage rating
• Charge pump for external N-Channel MOSFET
• 20-mV ANODE to CATHODE forward voltage drop
regulation
• 1-µA shutdown current (EN = Low)
• 80-µA operating quiescent current (EN = High)
• 2.3-A peak gate turnoff current
• Fast response to reverse current blocking:
< 0.75 µs
• Integrated battery voltage monitoring switch (SW)
• Meets automotive ISO7637 transient requirements
without additional input TVS diode (TVS Less)
• 8-Pin SOT-23 package 2.90 mm × 1.60 mm
2 Applications
• Automotive ADAS systems - camera
• Automotive infotainment systems - head unit,
telematics control unit
• Automotive USB hubs
3 Description
The LM74701-Q1 is an automotive AEC Q100
qualified ideal diode controller which operates in
conjunction with an external N-channel MOSFET
as an ideal diode for low loss reverse polarity
protection with a 20-mV forward voltage drop.
LM74701-Q1 is suitable for input protection of 12-V
automotive systems. The 3.2-V input voltage support
is particularly well suited for severe cold crank
requirements in automotive systems.
The device controls the GATE of the MOSFET to
regulate the forward voltage drop at 20 mV. The
regulation scheme enables graceful turn off of the
MOSFET during a reverse current event and ensures
zero DC reverse current flow. Fast response (<
0.75 µs) to Reverse Current Blocking makes the
device suitable for systems with output voltage holdup
requirements during ISO7637 pulse testing as well
as power fail and input micro-short conditions. The
LM74701-Q1 has an unique integrated VDS clamp
feature which enables users to achieve "TVS Less"
input polarity protection solution and save on average
a typical 60% of PCB space in constrained automotive
systems.
The LM74701-Q1 controller provides a charge pump
gate drive for an external N-channel MOSFET. With
the enable pin low, the controller is off and draws
approximately 1 µA of current.
Device Information
(1)
PART NUMBER PACKAGE BODY SIZE (NOM)
LM74701-Q1 SOT-23 (8) 2.90 mm × 1.60 mm
(1) For all available packages, see the orderable addendum at
the end of the data sheet.
GND
GATE
ANODE
EN
VBAT
ON
OFF
SW
LM74701-Q1
VOUT
R
2
R
1
BATT_MON
CATHODE
VCAP
Voltage
Regulator
Typical Application Schematic
"TVS Less" ISO7637-2 Pulse 1 Performance
ADVANCE INFORMATION
LM74701-Q1
SNOSDB8 – JUNE 2021
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. ADVANCE INFORMATION for preproduction products; subject to change
without notice.
Table of Contents
1 Features............................................................................1
2 Applications..................................................................... 1
3 Description.......................................................................1
4 Revision History.............................................................. 2
5 Pin Configuration and Functions...................................3
6 Specifications.................................................................. 4
6.1 Absolute Maximum Ratings ....................................... 4
6.2 ESD Ratings .............................................................. 4
6.3 Recommended Operating Conditions ........................4
6.4 Thermal Information ...................................................5
6.5 Electrical Characteristics ............................................5
6.6 Switching Characteristics ...........................................6
7 Parameter Measurement Information............................ 7
8 Detailed Description........................................................8
8.1 Overview..................................................................... 8
8.2 Functional Block Diagram........................................... 8
8.3 Feature Description.....................................................9
8.4 Device Functional Modes..........................................11
9 Application and Implementation.................................. 14
9.1 Application Information............................................. 14
9.2 Typical Application.................................................... 14
9.3 What to Do and What Not to Do............................... 18
10 Power Supply Recommendations..............................19
11 Layout........................................................................... 19
11.1 Layout Guidelines................................................... 19
11.2 Layout Example...................................................... 19
12 Device and Documentation Support..........................20
12.1 Receiving Notification of Documentation Updates..20
12.2 Support Resources................................................. 20
12.3 Trademarks............................................................. 20
12.4 Electrostatic Discharge Caution..............................20
12.5 Glossary..................................................................20
13 Mechanical, Packaging, and Orderable
Information.................................................................... 20
13.1 Tape and Reel Information......................................21
4 Revision History
DATE REVISION NOTES
June 2021 * Initial release.
LM74701-Q1
SNOSDB8 – JUNE 2021
www.ti.com
ADVANCE INFORMATION
2 Submit Document Feedback
Copyright © 2021 Texas Instruments Incorporated
Product Folder Links: LM74701-Q1
5 Pin Configuration and Functions
4
22 7
33
55
1
6
88
VCAP
GND
EN
SW
CATH OD EGATE
ANODE
N.C
Figure 5-1. DDF Package 8-Pin SOT-23 Top View
Table 5-1. Pin Functions
PIN
I/O
(1)
DESCRIPTION
NO. NAME
1 GATE O Gate drive output. Connect to gate of the external N-channel MOSFET.
2 ANODE I
Anode of the ideal diode and input power. Connect to the source of the external N-channel
MOSFET.
3 VCAP O Charge pump output. Connect to external charge pump capacitor.
4 SW I
Voltage sensing disconnect switch terminal. ANODE and SW are internally connected
through a switch when EN is high. A resistor ladder from this pin to GND can be used to
monitor battery voltage. When EN is pulled low, the switch is OFF disconnecting the resistor
ladder from the battery line thereby cutting off the leakage current.
5 GND G Ground pin.
6 EN I Enable pin. Can be connected to ANODE for always ON operation.
7 N.C - No connect. Keep this pin floating.
8 CATHODE I Cathode of the ideal diode. Connect to the drain of the external N-channel MOSFET.
(1) I = Input, O = Output, G = GND
www.ti.com
LM74701-Q1
SNOSDB8 – JUNE 2021
ADVANCE INFORMATION
Copyright © 2021 Texas Instruments Incorporated
Submit Document Feedback
3
Product Folder Links: LM74701-Q1
6 Specifications
6.1 Absolute Maximum Ratings
over operating free-air temperature range (unless otherwise noted)
(1)
MIN MAX UNIT
Input Pins
ANODE to GND –(V
CLAMP
–1) 65 V
SW, EN to GND, V
(ANODE)
> 0 V –0.3 65 V
EN to GND, V
(ANODE)
≤ 0 V V
(ANODE)
(65 + V
(ANODE)
) V
SW to GND, V
(ANODE)
≤ 0 V V
(ANODE)
(0.3 + V
(ANODE)
) V
I
SW
–1 10 mA
Output Pins
GATE to ANODE –0.3 15 V
VCAP to ANODE –0.3 15 V
Output to Input
Pins
CATHODE to ANODE –5 V
CLAMP
V
Operating junction temperature
(2)
–40 150 °C
Storage temperature, T
stg
–40 150 °C
(1) Operation outside the Absolute Maximum Ratings may cause permanent device damage. Absolute Maximum Ratings do not imply
functional operation of the device at these or any other conditions beyond those listed under Recommended Operating Conditions.
If used outside the Recommended Operating Conditions but within the Absolute Maximum Ratings, the device may not be fully
functional, and this may affect device reliability, functionality, performance, and shorten the device lifetime.
(2) High junction temperatures degrade operating lifetimes. Operating lifetime is de-rated for junction temperatures greater than 125°C.
6.2 ESD Ratings
VALUE UNIT
V
(ESD)
Electrostatic discharge
Human body model (HBM), per AEC Q100-002
(1)
±2000
V
Charged device model (CDM),
per AEC Q100-011
Corner pins (GATE ,SW, GND,
CATHODE)
±750
Other pins ±500
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
6.3 Recommended Operating Conditions
over operating free-air temperature range (unless otherwise noted)
(1)
MIN NOM MAX UNIT
Input Pins
ANODE to GND –60 60
VCATHODE to GND 60
EN to GND –60 60
Input to Output
pins
ANODE to CATHODE –V
CLAMP
5 V
External
capacitance
ANODE 0.1 1 µF
VCAP to ANODE 0.1 µF
External
MOSFET max
V
GS
rating
GATE to ANODE 15 V
T
J
Operating junction temperature range
(2)
–40 150 °C
(1) Recommended Operating Conditions are conditions under which the device is intended to be functional. For specifications and test
conditions, see Electrical Characteristics.
(2) High junction temperatures degrade operating lifetimes. Operating lifetime is de-rated for junction temperatures greater than 125°C.
LM74701-Q1
SNOSDB8 – JUNE 2021
www.ti.com
ADVANCE INFORMATION
4 Submit Document Feedback
Copyright © 2021 Texas Instruments Incorporated
Product Folder Links: LM74701-Q1
6.4 Thermal Information
THERMAL METRIC
(1)
LM74701-Q1
UNITDDF (SOT)
8 PINS
R
θJA
Junction-to-ambient thermal resistance 133.8 °C/W
R
θJC(top)
Junction-to-case (top) thermal resistance 72.6 °C/W
R
θJB
Junction-to-board thermal resistance 54.5 °C/W
Ψ
JT
Junction-to-top characterization parameter 4.6 °C/W
Ψ
JB
Junction-to-board characterization parameter 54.2 °C/W
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application
report, SPRA953.
6.5 Electrical Characteristics
T
J
= –40°C to +125°C; typical values at T
J
= 25°C, V
(ANODE)
= 12 V, C
(VCAP)
= 0.1 µF, V
(EN)
= 3.3 V, over operating free-air
temperature range (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
V
ANODE
SUPPLY VOLTAGE
V
CLAMP
V(CATHODE–ANODE) clamp voltage 34 43 V
V
(ANODE)
Operating input voltage 4 60 V
V
(ANODE
POR)
VANODE POR Rising threshold 3.9 V
VANODE POR Falling threshold 2.2 2.8 3.1 V
V
(ANODE POR(Hys))
VANODE POR Hysteresis 0.44 0.67 V
I
(SHDN)
Shutdown Supply Current V
(EN)
= 0 V 0.9 1.5 µA
I
(Q)
Operating Quiescent Current 80 130 µA
ENABLE INPUT
V
(EN_IL)
Enable input low threshold 0.5 0.9 1.22 V
V
(EN_IH)
Enable input high threshold 1.06 2 2.6 V
V
(EN_Hys)
Enable Hysteresis 0.52 1.35 V
I
(EN)
Enable sink current V
(EN)
= 12 V 3 5 µA
V
ANODE
to V
CATHODE
V
(AK REG)
Regulated Forward V
(AK)
Threshold 13 20 29 mV
V
(AK)
V
(AK)
threshold for full conduction
mode
34 54 59 mV
V
(AK REV)
V
(AK)
threshold for reverse current
blocking
–17 –11 –2 mV
Gm
Regulation Error AMP
Transconductance
(1)
1200 1800 3100 µA/V
SWITCH
R
(SW)
Battery sensing disconnect switch
resistance
4 V < V
(ANODE)
≤ 60 V 10 19.5 46 Ω
GATE DRIVE
I
(GATE)
Peak source current
V
(ANODE)
– V
(CATHODE)
= 100 mV,
V
(GATE)
– V
(ANODE)
= 5 V
3 11 mA
Peak sink current
V
(ANODE)
– V
(CATHODE)
= –20 mV,
V
(GATE)
– V
(ANODE)
= 5 V
2000 mA
Regulation max sink current
V
(ANODE)
– V
(CATHODE)
= 0 V,
V
(GATE)
– V
(ANODE)
= 5 V
6 26 µA
RDS
ON
discharge switch RDS
ON
V
(ANODE)
– V
(CATHODE)
= –20 mV,
V
(GATE)
– V
(ANODE)
= 100 mV
0.4 2 Ω
CHARGE PUMP
www.ti.com
LM74701-Q1
SNOSDB8 – JUNE 2021
ADVANCE INFORMATION
Copyright © 2021 Texas Instruments Incorporated
Submit Document Feedback
5
Product Folder Links: LM74701-Q1
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