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An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,

intellectual property matters and other important disclaimers. PRODUCTION DATA.

TS3USB221A-Q1

SCDS300E –JULY 2010–REVISED JUNE 2020

TS3USB221A-Q1 ESD Protected, High-Speed USB 2.0 (480 Mbps)

1:2 Multiplexer/Demultiplexer Switch With Single Enable

1 Features

• Qualified for Automotive Applications

• AEC-Q100 Qualified With the Following Results:

– Device Temperature Grade 1: –40°C to 125°C

Ambient Operating Temperature Range

– Device HBM ESD Classification Level H2

– Device CDM ESD Classification Level C5

• V

Operation at 2.5 V to 3.3 V

• V

I/O

Accepts Signals Up to 5.5 V

• 1.8-V Compatible Control-Pin Inputs

• Low-Power Mode When OE Is Disabled (1 µA)

• r

= 16 Ω Maximum

• Δr

= 0.2 Ω Typical

• C

io(on)

= 6 pF Typical

• Low Power Consumption (30 µA Maximum)

• High Bandwidth (900 MHz Typical)

• ESD Performance Tested Per JESD 22

– 7000-V Human-Body Model

(A114-B, Class II)

– 1000-V Charged-Device Model (C101)

• ESD Performance I/O to GND Per JESD 22

– 12-kV Human-Body Model

2 Applications

• Routing High Speed USB Signals

• Automotive USB Hubs

• Phone-Controlled Automotive Infotainment

3 Description

The TS3USB221A-Q1 is a high-bandwidth switch

specially designed for the switching of high-speed

USB 2.0 signals in automotive USB hubs or

controllers with limited USB I/Os. The wide bandwidth

(900 MHz) of this switch allows signals to pass with

minimum edge and phase distortion. The device

multiplexes differential outputs from a USB host

device to one of two corresponding outputs. The

switch is bidirectional and offers little or no

attenuation of the high-speed signals at the outputs. It

is designed for low bit-to-bit skew and high channel-

to-channel noise isolation, and is compatible with

various standards, such as high-speed USB 2.0 (480

Mbps).

The TS3USB221A-Q1 integrates ESD protection cells

on all pins, is available in a tiny UQFN package

(2 mm × 1.5 mm) and is characterized over the free

air temperature range from –40°C to 125°C.

Device Information

(1)

PART NUMBER PACKAGE BODY SIZE (NOM)

TS3USB221A-Q1 UQFN (10) 1.50 mm × 2.00 mm

(1) For all available packages, see the orderable addendum at

the end of the data sheet.

Block Diagram

TS3USB221A-Q1

SCDS300E –JULY 2010–REVISED JUNE 2020

www.ti.com

Product Folder Links: TS3USB221A-Q1

Table of Contents

1 Features.................................................................. 1

2 Applications ........................................................... 1

3 Description ............................................................. 1

4 Revision History..................................................... 2

5 Pin Configuration and Functions......................... 3

6 Specifications......................................................... 3

6.1 Absolute Maximum Ratings ...................................... 3

6.2 ESD Ratings.............................................................. 4

6.3 Recommended Operating Conditions....................... 4

6.4 Thermal Information.................................................. 4

6.5 Electrical Characteristics........................................... 5

6.6 Dynamic Electrical Characteristics: V

= 3.3 V....... 5

6.7 Dynamic Electrical Characteristics: V

= 2.5 V....... 6

6.8 Switching Characteristics: V

= 3.3 V..................... 6

6.9 Switching Characteristics: V

= 2.5 V..................... 6

6.10 Typical Characteristics............................................ 7

7 Parameter Measurement Information .................. 8

8 Detailed Description............................................ 12

8.1 Overview ................................................................. 12

8.2 Functional Block Diagram ....................................... 12

8.3 Feature Description................................................. 12

8.4 Device Functional Modes........................................ 13

9 Application and Implementation ........................ 14

9.1 Application Information............................................ 14

9.2 Typical Application ................................................. 14

10 Power Supply Recommendations ..................... 16

11 Layout................................................................... 16

11.1 Layout Guidelines ................................................. 16

11.2 Layout Example .................................................... 17

12 Device and Documentation Support ................. 18

12.1 Receiving Notification of Documentation Updates 18

12.2 Community Resource............................................ 18

12.3 Trademarks........................................................... 18

12.4 Electrostatic Discharge Caution............................ 18

12.5 Glossary................................................................ 18

13 Mechanical, Packaging, and Orderable

Information ........................................................... 18

4 Revision History

NOTE: Page numbers for previous revisions may differ from page numbers in the current version.

Changes from Revision D (August 2016) to Revision E Page

• Changed CDM spec to align with AEC Q100-011 ................................................................................................................ 4

Changes from Revision C (October 2012) to Revision D Page

• Added ESD Ratings table, Feature Description section, Device Functional Modes, Application and Implementation

section, Power Supply Recommendations section, Layout section, Device and Documentation Support section, and

Mechanical, Packaging, and Orderable Information section ................................................................................................. 1

• Deleted the Ordering Information table; see the POA at the end of the data sheet .............................................................. 1

• Updated Applications section ................................................................................................................................................. 1

• Changed "in handset and consumer applications, such as cell phones, digital cameras, and notebooks with hubs or

controllers with limited USB I/Os" to "in automotive USB hubs or controllers with limited USB I/Os" in Description section 1

• Changed the R

θJA

and R

θJC(top)

values in theThermal Information table, and added more thermal values ............................ 4

Changes from Revision B (July 2011) to Revision C Page

• Added AEC-Q100 info to Features......................................................................................................................................... 1

• Added "Per JESD 22" to ESD Performance I/O to GND in Features. ................................................................................... 1

• Added ESD ratings to Abs Max table..................................................................................................................................... 4

TS3USB221A-Q1

www.ti.com

SCDS300E –JULY 2010–REVISED JUNE 2020

Product Folder Links: TS3USB221A-Q1

(1) V

and I

refer to control inputs. V

, V

, I

, and I

refer to data pins.

(2) All typical values are at V

= 3.3 V (unless otherwise noted), T

= 25°C.

(3) For I/O ports, the parameter I

includes the input leakage current.

(4) This is the increase in supply current for each input that is at the specified TTL voltage level, rather than V

or GND.

(5) Measured by the voltage drop between the A and B terminals at the indicated current through the switch. ON-state resistance is

determined by the lower of the voltages of the two (A or B) terminals.

6.5 Electrical Characteristics

over operating free-air temperature range (unless otherwise noted)

(1)

PARAMETER TEST CONDITIONS MIN TYP

(2)

MAX UNIT

Input-source clamp

voltage

= 3.6 V, 2.7 V, I

= –18 mA –1.8 V

Input leakage current,

control inputs

= 3.6 V, 2.7 V, 0 V, V

= 0 V to 3.6 V ±1 µA

(3)

Off-state leakage

current

= 3.6 V, 2.7 V, V

= 0 V to 5.25 V, V

= 0 V, V

= V

or GND,

Switch OFF

±1 µA

(OFF)

Power-off leakage

current

= 0 V

I/O

= 0 V to 5.25 V ±2

µAV

I/O

= 0 V to 3.6 V ±2

I/O

= 0 V to 2.7 V ±1

Supply current V

= 3.6 V, 2.7 V, V

= V

or GND, I

I/O

= 0 V, Switch ON or OFF 30 µA

Supply current (low

power mode)

= 3.6 V, 2.7 V, V

= V

or GND, Switch disabled, OE in high

state

1 µA

ΔI

(4)

Supply-current

change, control inputs

One input at 1.8 V,

Other inputs at V

GND

= 3.6 V 20

µA

= 2.7 V 0.5

Input capacitance,

control inputs

= 3.3 V, 2.5 V, V

= V

or 0 V 1.5 2.5 pF

io(OFF)

OFF capacitance V

= 3.3 V, 2.5 V, V

I/O

= V

or 0 V, Switch OFF 3.5 5 pF

io(ON)

ON capacitance V

= 3.3 V, 2.5 V, V

I/O

= V

or 0 V, Switch ON 6 7.5 pF

(5)

ON-state resistance V

= 3 V, 2.3 V

= 0 V, I

= 30 mA

= 25°C

3 6

= 2.4 V, I

= –15

3.4 6

= 0 V, I

= 30 mA

= 125°C

6 10

= 2.4 V, I

= –15

10 16

ΔR

ON-state resistance

match between

channels

= 3 V, 2.3 V

= 0 V, I

= 30 mA 0.2

= 1.7, I

= –15 mA 0.2

ON(flat)

ON-state resistance

flatness

= 3 V, 2.3 V

= 0 V, I

= 30 mA 1

= 1.7, I

= –15 mA 1

6.6 Dynamic Electrical Characteristics: V

= 3.3 V

over operating range, T

= –40°C to 125°C, V

= 3.3 V ±10%, GND = 0 V

PARAMETER TEST CONDITIONS TYP UNIT

TALK

Crosstalk R

= 50 , f = 250 MHz –40 dB

IRR

OFF isolation R

= 50 , f = 250 MHz –41 dB

BW Bandwidth (–3 dB) R

= 50 0.9 GHz

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