TI-DS64BR111.pdf资源-CSDN文库

50 浏览量 2022-12-16 22:53:41 上传评论 4 收藏 1.27MB PDF 举报

《TI-DS64BR111：超低功耗6.4 Gbps双通道重定时器》 TI公司的DS64BR111是一款专为高速串行链接设计的超低功耗、高性能双通道重定时器。该器件特别适用于以太网转接驱动，能够在高达6.4 Gbps的数据速率下工作，有效地增强信号质量，适用于各种传输介质，如FR-4背板或AWG-30电缆。主要特性： 1. **双通道重定时器**：DS64BR111拥有两个通道，每个通道都可处理发送和接收数据，支持双向通信。这种设计使得它能够在单个设备中实现两个独立的数据路径。 2. **超低功耗**：每个通道的典型功耗仅为65mW，同时提供选项关闭未使用的通道，这在节能方面表现突出，尤其适合对功耗有严格要求的应用场景。 3. **高级信号调理功能**： - **接收均衡**：内置的连续时间线性均衡器(CTLE)能提供高达+25 dB的增益，特别是在3.2 GHz时，有效改善因互连介质产生的符号间干扰(ISI)导致的输入眼图闭合问题。 - **发射去加重**：发射端配备可编程的去加重驱动器，可调节幅度电压水平，范围从700 mVp-p到1200 mVp-p，适应不同的应用需求。 - **发射电压摆幅控制**：允许用户根据应用需求设置电压摆幅，确保信号的稳定性和兼容性。 - **小于0.2 UI的残余抖动**：在6.4 Gbps的数据速率下，DS64BR111的抖动性能优秀，确保了数据传输的高精度。 4. **配置灵活性**：可以通过引脚选择、EEPROM或SMBus接口进行编程。在使用EEPROM模式时，设备上电时会自动加载配置信息，无需外部微处理器或软件驱动程序。 5. **电源选择**：支持2.5V或3.3V单电源操作，可以根据系统电源需求进行选择。 6. **紧凑型封装**：采用4mm x 4mm 24引脚无引脚WQFN封装，节省空间，有利于系统集成。 7. **高ESD耐受能力**：>5kV的人体模型(HBM)静电放电等级，确保了器件在恶劣环境下的可靠性。 8. **宽工作温度范围**：可在工业级温度范围-40℃至85℃下正常工作，适合各种环境条件的应用。 TI的DS64BR111是为高速铜缆模块、FR-4背板等应用场景设计的理想解决方案，其低功耗、高信号处理能力和灵活配置特性，使其在现代高速数据传输系统中扮演着关键角色。作为TI PowerWise系列的一部分，DS64BR111在保持高性能的同时，也注重能源效率，符合现代电子设计的趋势。

资源推荐

资源详情

资源评论

DS64BR111

www.ti.com

SNLS343C –SEPTEMBER 2011–REVISED APRIL 2013

DS64BR111 Ultra Low Power 6.4 Gbps 2-Channel Repeaters with Input Equalization and

Output De-Emphasis

Check for Samples: DS64BR111

FEATURES

DESCRIPTION

The DS64BR111 is an extremely low power, high

• Two Channel Repeater for up to 6.4 Gbps

performance dual-channel repeater for serial links

– DS64BR111 : 1x Bidirectional Lane

with data rates up to 6.4 Gbps. The DS64BR111

• Low 65mW/Channel (Typical) Power

pinout is configured as one bidirectional lane (one

Consumption, with Option to Power Down

transmit, one receive channel).

Unused Channels

The DS64BR111 features a powerful 4-stage

• Advanced Signal Conditioning Features

continuous time linear equalizer (CTLE) to provide a

boost of up to +25 dB at 3.2 GHz and open an input

– Receive Equalization up to +25 dB

eye that is completely closed due to inter-symbol

– Transmit De-Emphasis up to -12 dB

interference (ISI) induced by the interconnect

– Transmit VOD Control: 700 to 1200 mVp-p

mediums such as an FR-4 backplane or AWG-30

cables. The transmitter features a programmable

– < 0.2 UI of Residual DJ at 6.4 Gbps

output de-emphasis driver with up to -12 dB and

• Programmable via Pin Selection, EEPROM or

allows amplitude voltage levels to be selected from

SMBus Interface

700 mVp-p to 1200 mVp-p to suit multiple application

• Single Supply Operation Selectable: 2.5V or

scenarios.

3.3v

The programmable settings can be applied via pin

• Flow-Thru Pinout in 4mmx4mm 24-Pin

settings, SMBus (I2C) protocol or an external

Leadless WQFN Package

EEPROM. When operating in the EEPROM mode,

the configuration information is automatically loaded

• >5kV HBM ESD Rating

on power up – This eliminates the need for an

• Industrial -40 to 85°C Operating Temperature

external microprocessor or software driver.

Range

Part of TI's PowerWise family of energy efficient

devices, the DS64BR111 consumes just 65

APPLICATIONS

mW/channel (typical), and allow the option to turn-off

• High-Speed Active Copper Cable Modules and

unused channels. This ultra low power consumption

FR-4 Backplane in Communication Systems

eliminates the need for external heat sinks and

• FC, SAS, SATA 3/6 Gbps (with OOB Detection),

simplifies thermal management in active cable

applications.

InfiniBand, CPRI, OBSAI, RXAUI and Many

Others

Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of

Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.

2All trademarks are the property of their respective owners.

PRODUCTION DATA information is current as of publication date.

Products conform to specifications per the terms of the Texas

Instruments standard warranty. Production processing does not

necessarily include testing of all parameters.

DS64BR111

SNLS343C –SEPTEMBER 2011–REVISED APRIL 2013

www.ti.com

PIN DESCRIPTIONS (continued)

Pin Name Pin I/O, Type

(1)

Pin Description

Number

AD0-AD3 10, 9, 2, 1 I, LVCMOS Float ENSMB Master or Slave mode

(4-Levels) SMBus Slave Address Inputs. In SMBus mode, these pins are the user set

SMBus slave address inputs. There are 16 addresses supported by these

pins.

Pins must be tied LOW or HIGH when used to define the device SMBus

address.

Note: Setting VOD_SEL = High in SMBus Mode will force the Address =

B0'h

READEN# 17 I, LVCMOS When using an External EEPROM, a transition from high to low starts the load

from the external EEPROM

DONE# 18 IO, LVCMOS, EEPROM Download Status

Float HIGH indicates Error / Still Loading

(4-Levels) LOW indicates download complete. No Error.

ENSMB = 0 (PIN MODE)

EQA0, EQA1 10, 9 I, LVCMOS, Float EQA/B ,0/1 control the level of equalization of each channel. The EQA/B pins

EQB0, EQB1 1, 2 (4-Levels) are active only when ENSMB is de-asserted (LOW).

When ENSMB goes high the SMBus registers provide independent control of

each lane, and the EQB0/B1 pins are converted to SMBUS AD2/AD3 inputs.

DEMA, DEMB 4, 5 IO, LVCMOS, DEMA/B controls the level of de-emphasis. The DEMA/B pins are only active

Float when ENSMB is de-asserted (LOW). Each of the 4 A/B channels have the

(4-Levels) same level unless controlled by the SMBus control registers. When ENSMB

goes high the SMBus registers provide independent control of each lane and

the DEM pins are converted to SMBUS SCL and SDA pins.

TX_DIS 6 I, LVCMOS DS64BR111

High = OUTA Enabled / OUTB Disabled

Low = OUTA/B Enabled

VOD_SEL 17 I, LVCMOS, Float EQ Mode and VOD select.

(4-Levels) High = (VOD = 1.1V/1.3V)

Float = (VOD = 1.0 V)

20K = (VOD = 1.2 V)

Low = (VOD = 700m V)

Note: DS64BR111 OUTA is limited to 700mV in pin mode, see Table 4 for

additional information.

Note: Setting VOD_SEL = High in SMBus Mode will force the SMBus

Address = B0'h

VDD_SEL 16 I, Internal Pull-up Enables the 3.3V to 2.5V internal regulator

Low = 3.3 V Operation

Float = 2.5 V Operation

MODE 18 I, LVCMOS Controls Device Mode of Operation

High = Continuous Talk

Float = Slow OOB

20KΩ = eSATA Mode, Fast OOB, Auto Low Power on 100 uS of inactivity. SD

stays active.

Low = SAS Mode, Fast OOB

Status Output

LOS 13 O, Open Drain Indicates Loss of Signal (Default is LOS on INA). Can be modified via SMBus

registers.

LOS Threshold Input

SD_TH 14 I, LVCMOS, Float The SD_TH pin controls LOS threshold setting;

(4-Levels) Assert (mV), Deassert (mV)

20K = 160 mV, 100 mV

Float = 180 mV, 110 mV (Default)

High = 190 mV, 130 mV

Low = 210 mV, 150 mV

Note: Using values less than the default level can extend the time

required to detect LOS and are not recommended.

Power

Product Folder Links: DS64BR111

DS64BR111

www.ti.com

SNLS343C –SEPTEMBER 2011–REVISED APRIL 2013

PIN DESCRIPTIONS (continued)

Pin Name Pin I/O, Type

(1)

Pin Description

Number

VDD 21, 22 Power Power supply pins

2.5V mode connect to 2.5V

3.3V mode do not connect to any supply voltage. Should be used to attach

external decoupling to device. 100 - 200 nF recommended.

Note: See APPLICATION INFORMATION for additional information.

VIN 15 Power VIN = 3.3V +/-10% (input to internal LDO regulator)

Note: Must FLOAT for 2.5V operation. See APPLICATION INFORMATION

for additional information.

GND DAP Power Ground pad (DAP - die attach pad).

These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam

during storage or handling to prevent electrostatic damage to the MOS gates.

ABSOLUTE MAXIMUM RATINGS

(1)(2)

Supply Voltage (VDD) -0.5V to +2.75V

Supply Voltage (VIN) -0.5V to +4.0V

LVCMOS Input/Output Voltage -0.5V to +4.0V

CML Input Voltage -0.5V to (VDD+0.5)

CML Input Current -30 to +30 mA

Junction Temperature 125°C

Storage Temperature -40°C to +125°C

ESD Rating

HBM, STD - JESD22-A114F > 5 kV

MM, STD - JESD22-A115-A 100 V

CDM, STD - JESD22-C101-D 1250 V

Package Thermal Resistance

θJC 3.2°C/W

θJA, No Airflow, 4 layer JEDEC 33.0°C/W

For soldering specifications:

See product folder at www.ti.com

http://www.ti.com/lit/SNOA549

(1) “Absolute Maximum Ratings” indicate limits beyond which damage to the device may occur, including inoperability and degradation of

device reliability and/or performance. Functional operation of the device and/or non-degradation at the Absolute Maximum Ratings or

other conditions beyond those indicated in the Recommended Operating Conditions is not implied. The Recommended Operating

Conditions indicate conditions at which the device is functional and the device should not be operated beyond such conditions. Absolute

Maximum Numbers are specified for a junction temperature range of -40°C to +125°C. Models are validated to Maximum Operating

Voltages only.

(2) If Military/Aerospace specified devices are required, please contact the Texas Instruments Sales Office / Distributors for

availability and specifications.

RECOMMENDED OPERATING CONDITIONS

Min Typ Max Units

Supply Voltage (2.5V 2.375 2.5 2.625 V

Mode)

Supply Voltage (3.3V 3.0 3.3 3.6 V

Mode)

Ambient Temperature -40 25 +85 °C

SMBus (SDA, SCL) 3.6 V

Product Folder Links: DS64BR111

剩余41页未读，继续阅读

评论收藏

内容反馈

不觉明了

粉丝: 8264
资源: 5764

TI-DS64BR111.pdf

TI-ADC32RF54.pdf

TI-AFE58JD16.pdf

TI-LMP90080.pdf

TI-VCA8500.pdf

TI-UCC24636.pdf

TI-DS64BR401.pdf

TI-DS125BR800A.pdf

TI-DS125BR800.pdf

TI-DS280BR810.pdf

TI-DS125BR401.pdf

TI-SN7489J.pdf

TI-TPS92390.pdf

TI-UCC28710.pdf

TI-TPS65983B.pdf

TI-TPS2090.pdf

TI-DS125BR401A.pdf

TI-DS125BR111.pdf

TI-DS280BR820.pdf

TI-DS10BR150.pdf

TI-DS110RT410.pdf

TI-CC3120.pdf

TI-LMH1219.pdf

TI-UCC28911.pdf

TI-UC27131.pdf

TI-OPA2391.pdf

TI-DS100KR800.pdf

福建师范大学836无机化学（B）2021年考研专业课初试大纲.pdf

TI-LM120.pdf

TI-DRV8303.pdf

TI-VSP3010.pdf

最新资源