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DS64BR401
www.ti.com
SNLS304G –JUNE 2009–REVISED APRIL 2013
DS64BR401 Quad Bi-Directional Repeater with Equalization and
De-Emphasis
Check for Samples: DS64BR401
1
FEATURES
DESCRIPTION
The DS64BR401 is a quad lane bi-directional signal
2
• Quad lane bi-directional repeater up to 6.4
conditioning repeater for 6.0/3.0/1.5 Gbps SATA/SAS
Gbps rate
and other high-speed bus applications with data rates
• Signal conditioning on input and output for
up to 6.4 Gbps. The device performs both receive
extended reach
equalization and transmit de-emphasis on each of its
8 channels to compensate for channel loss, allowing
• Adjustable receive equalization up to +33 dB
maximum flexibility of physical placement within a
gain
system. The receiver's continuous time linear
• Adjustable transmit de-emphasis up to −12 dB
equalizer (CTLE) provides a boost of up to +33 dB at
• Adjustable transmit VOD (600 mVp-p to 1200
3 GHz and is capable of opening an input eye that is
mVp-p)
completely closed due to inter-symbol interference
(ISI) induced by the interconnect medium. The
• <0.25 UI of residual DJ at 6.4 Gbps with 40”
transmitter features a programmable output de-
FR4 trace
emphasis driver and allows amplitude voltage levels
• Automatic de-emphasis scaling based on rate
to be selected from 600 mVp-p to 1200 mVp-p to suit
detect
multiple application scenarios. This Low Power
• SATA/SAS: OOB signal pass-through,
Differential Signaling (LPDS) output driver is a power
efficient implementation that maintains compatibility
– <3 ns (typ) envelope distortion
with AC coupled CML receiver. The programmable
• Adjustable electrical IDLE detect threshold
settings can be applied via pin settings or SMBus
• Low power (100 mW/channel), per-channel
interface.
power down
To enable seamless upgrade from SAS/SATA 3.0
• Programmable via pin selection or SMBus
Gbps to 6.0 Gbps data rates without compromising
interface
physical reach, DS64BR401 automatically detects the
incoming data rate and selects the optimal de-
• Single supply operation at 2.5V ±5%
emphasis pulse width. The device detects the out-of-
• >6 kV HBM ESD Rating
band (OOB) idle and active signals of the SAS/SATA
• 3.3V LVCMOS input tolerant for SMBus
specification and passes through with minimum signal
interface
distortion.
• High speed signal flow–thru pinout package:
With a typical power consumption of 200 mW/lane
54-pin WQFN (10 mm x 5.5 mm)
(100 mW/channel) at 6.4 Gbps, and control to turn-off
unused channels, the DS64BR401 is part of Texas
APPLICATIONS
Instruments' PowerWise family of energy efficient
devices.
• SATA (1.5, 3.0 and 6 Gbps)
• SAS (1.5, 3.0 and 6 Gbps)
• XAUI (3.125 Gbps), RXAUI (6.25 Gbps)
• sRIO – Serial Rapid I/O
• Fibre Channel (4.25 Gbps)
• 10GBase-CX4, InfiniBand 4x (SDR & DDR)
• QSFP active copper cable modules
• High-speed active cable and FR-4 backplane
traces
1
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
2All trademarks are the property of their respective owners.
PRODUCTION DATA information is current as of publication date.
Copyright © 2009–2013, Texas Instruments Incorporated
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
SATA/ SAS
Host
Controller
HDD0
2
2
DS64BR401
2
2
2
2
OB0+-
2
2
2
2
2
2
2
2
2
2
TX
0
TX
1
TX
2
TX
3
RX
0
RX
1
RX
2
RX
3
OB1+-
OB2+-
OB3+-
IB0+-
IB1+-
IB2+-
IB3+-
IA0+-
IA1+-
IA2+-
IA3+-
OA0+-
OA1+-
OA2+-
OA3+-
HDD1
HDD2
HDD3
Cs > 10 nF
Cs > 10 nF
SATA/SAS
Host
Controller
SATA/SAS
Disk
Drives
Interconnect
Cable
DS64BR401
Slice 1 of 4
DS64BR401
Slice 1 of 4
Cs > 10 nF
Cs > 10 nF
DS64BR401
SNLS304G –JUNE 2009–REVISED APRIL 2013
www.ti.com
TYPICAL CABLE APPLICATION
TYPICAL APPLICATION CONNECTION DIAGRAM
2 Submit Documentation Feedback Copyright © 2009–2013, Texas Instruments Incorporated
Product Folder Links: DS64BR401
OB_0+
OB_0-
OB_1+
VOD1
VOD0
SD_TH
1
2
3
4
26
25
TOP VIEW
DAP = GND
OB_1-
OB_2+
OB_2-
5
6
7
24
21
20
23
IA_3-
8
IA_0+
IA_0-
VDD
IA_1+
9
10
11
12
IA_1-
EQA0
IA_2+
IA_2-
13
18
14
15
IA_3+
16
17
OA_1+
OA_1-
EQA1
OA_2+
36
34
35
OA_2-
OA_3+
OA_3-
33
31
32
TXIDLEA
TXIDLEB
IB_3+
IB_3-
VDD
41
40
39
RATE
OA_0+
OA_0-
37
38
IB_0+
IB_0-
IB_1+
IB_1-
IB_2-
IB_2+
44
42
43
VDD
DEMA1/SCL
50
48
47
49
DEMA0/SDA
ENSMB
46
51
OB_3+
OB_3-
SMBUS AND CONTROL
DEMB1/AD0
DEMB0/AD1
30
29
28
NC
52
EQB1/AD2
EQB0/AD3
19
22
PWDN
27
45
53
54
VDD
VDD
Ix_n+
Ix_n-
EQ
RATE
DET
LIMITER
IDLE
DET
OUTBUF
SMBus
VOD/DE-EMPHASIS CONTROL
VDD
SMBus
TX Idle Enable
SMBus
DEMA/B
EQA/B
Ox_n+
Ox_n-
TXIDLEx
DS64BR401
www.ti.com
SNLS304G –JUNE 2009–REVISED APRIL 2013
BLOCK DIAGRAM - DETAIL VIEW OF THE EACH CHANNEL (1 OF 8)
PIN DIAGRAM
Figure 1. DS64BR401 Pin Diagram 54L WQFN
Copyright © 2009–2013, Texas Instruments Incorporated Submit Documentation Feedback 3
Product Folder Links: DS64BR401
DS64BR401
SNLS304G –JUNE 2009–REVISED APRIL 2013
www.ti.com
Table 1. PIN DESCRIPTIONS
Pin Name Pin Number I/O, Type Pin Descriptions
Differential High Speed I/O's
IA_0+, IA_0- , 10, 11 I, CML Inverting and non-inverting CML differential inputs to the equalizer. A
IA_1+, IA_1-, 12, 13 gated on-chip 50Ω termination resistor connects INA_n+ to VDD and
IA_2+, IA_2-, 15, 16 INA_n- to VDD when enabled.
IA_3+, IA_3- 17, 18
OA_0+, OA_0-, 35, 34 O, LPDS Inverting and non-inverting low power differential signaling (LPDS) 50Ω
OA_1+, OA_1-, 33, 32 outputs with de-emphasis. Compatible with AC coupled CML inputs.
OA_2+, OA_2-, 31, 30
OA_3+, OA_3- 29, 28
IB_0+, IB_0- , 45, 44 I, CML Inverting and non-inverting CML differential inputs to the equalizer. A
IB_1+, IB_1-, 43, 42 gated on-chip 50Ω termination resistor connects INB_n+ to VDD and
IB_2+, IB_2-, 40, 39 INB_n- to VDD when enabled.
IB_3+, IB_3- 38, 37
OB_0+, OB_0-, 1, 2 O, LPDS Inverting and non-inverting low power differential signaling (LPDS) 50Ω
OB_1+, OB_1-, 3, 4 outputs with de-emphasis. Compatible with AC coupled CML inputs.
OB_2+, OB_2-, 5, 6
OB_3+, OB_3- 7, 8
Control Pins — Shared (LVCMOS)
ENSMB 48 I, LVCMOS w/ System Management Bus (SMBus) enable pin.
internal pull- When pulled high provide access internal digital registers that are a
down means of auxiliary control for such functions as equalization, de-
emphasis, VOD, rate, and idle detection threshold.
When pulled low, access to the SMBus registers are disabled and
SMBus function pins are used to control the Equalizer and De-Emphasis.
Please refer to SYSTEM MANAGEMENT BUS (SMBUS) AND
CONFIGURATION REGISTERS section and ELECTRICAL
CHARACTERISTICS — SERIAL MANAGEMENT BUS INTERFACE for
detail information.
ENSMB = 1 (SMBUS MODE)
SCL 50 I, LVCMOS ENSMB = 1
SMBUS clock input pin is enabled. External pull-up resistor maybe
needed. Refer to R
TERM
in the SMBus specification.
SDA 49 I, LVCMOS ENSMB = 1
O, Open Drain The SMBus bi-directional SDA pin is enabled. Data input or open drain
output. External pull-up resistor is required.
Refer to R
TERM
in the SMBus specification.
AD0–AD3 54, 53, 47, 46 I, LVCMOS w/ ENSMB = 1
internal pull- SMBus Slave Address Inputs. In SMBus mode, these pins are the user
down set SMBus slave address inputs. See section — SYSTEM
MANAGEMENT BUS (SMBUS) AND CONFIGURATION REGISTERS
for additional information.
ENSMB = 0 (NORMAL PIN MODE)
EQA0, EQA1 20, 19 I, Float, EQA/B, 3–level controls the level of equalization of the A/B sides. The
EQB0, EQB1 46, 47 LVCMOS EQA/B pins are active only when ENSMB is de-asserted (Low). Each of
the 4 A/B channels have the same level unless controlled by the SMBus
control registers. When ENSMB goes high the SMBus registers provide
independent control of each lane. See Table 2,Table 3,Table 4
DEMA0, DEMA1 49, 50 I, Float, DEMA/B, 3–level controls the level of de-emphasis of the A/B sides. The
DEMB0, DEMB1 53, 54 LVCMOS DEMA/B pins are only active when ENSMB is de-asserted (Low). Each
of the 4 A/B channels have the same level unless controlled by the
SMBus control registers. When ENSMB goes High the SMBus registers
provide independent control of each lane. See Table 5
Control Pins — Both Modes (LVCMOS)
RATE 21 I, Float, RATE, 3–level controls the pulse width of de-emphasis of the output.
LVCMOS RATE = 0 forces 3 Gbps,
RATE = 1 forces 6 Gbps,
RATE = Float enables auto rate detection and the pulse width (pull-back)
is set appropriately after each exit from IDLE. This requires the transition
from IDLE to ACTIVE state — OOB signal. See Table 5
4 Submit Documentation Feedback Copyright © 2009–2013, Texas Instruments Incorporated
Product Folder Links: DS64BR401
DS64BR401
www.ti.com
SNLS304G –JUNE 2009–REVISED APRIL 2013
Table 1. PIN DESCRIPTIONS (continued)
Pin Name Pin Number I/O, Type Pin Descriptions
TXIDLEA,TXIDLEB 24, 25 I, Float, TXIDLEA/B, 3–level controls the driver output.
LVCMOS TXIDLEA/B = 0 disables the signal detect/squelch function for all A/B
outputs.
TXIDLEA/B = 1 forces the outputs to be muted (electrical idle).
TXIDLEA/B = Float enables the signal auto detect/squelch function and
the signal detect voltage threshold level can be adjusted using the
SD_TH pin. See Table 6
VOD0, VOD1 22, 23 I, LVCMOS w/ VOD[1:0] adjusts the output differential amplitude voltage level.
internal pull- VOD[1:0] = 00 sets output VOD = 600 mV (Default)
down VOD[1:0] = 01 sets output VOD = 800 mV
VOD[1:0] = 10 sets output VOD = 1000 mV
VOD[1:0] = 11 sets output VOD = 1200 mV
PWDN 52 I, LVCMOS PWDN = 0 enables the device (normal operation).
PWDN = 1 disables the device (low power mode).
Pin must be driven to a logic low at all times for normal operation
Analog
SD_TH 27 I, ANALOG Threshold select pin for electrical idle detect threshold. Float pin for
typical default 130 mVp-p (differential), otherwise connect resistor from
SD_TH to GND to set threshold voltage. See Table 7, Figure 6
Power
VDD 9, 14, 36, 41, 51 Power Power supply pins. 2.5 V +/-5%
GND DAP Power DAP is the large metal contact at the bottom side, located at the center
of the 54 pin WQFN package. It should be connected to the GND plane
with at least 4 via to lower the ground impedance and improve the
thermal performance of the package.
NC 26 No Connect — Leave pin open
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
Copyright © 2009–2013, Texas Instruments Incorporated Submit Documentation Feedback 5
Product Folder Links: DS64BR401
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