TI-AMC1301-Q1.pdf资源-CSDN文库

需积分: 10 201 浏览量 2022-11-29 23:29:35 上传评论 4 收藏 1.63MB PDF 举报

资源详情

资源评论

VOUTP

VOUTN

VDD2

GND2

GND1

VINP

VINN

VDD1

AMC1301-Q1

HV+

HV-

To Load

Floating

Power Supply

3.3 V or 5.0 V

SHUNT

Gate

Driver

Gate

Driver

ADC121S101-Q1

12-Bit ADC

3.3 V or

5.0 V

Reinforced Isolation

Product

Folder

Order

Now

Technical

Documents

Tools &

Software

Support &

Community

Reference

Design

An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,

intellectual property matters and other important disclaimers. PRODUCTION DATA.

English Data Sheet: SBAS792

AMC1301-Q1

ZHCSG74A –APRIL 2017–REVISED APRIL 2017

具具有有 ±250mV 输输入入电电压压、、3µs 延延迟迟的的增增强强隔隔离离式式 AMC1301-Q1 精精密密放放大大器器

1 特特性性

• 符合汽车应用标准

• 具有符合 AEC-Q100 的下列结果：

– 温度等级：-40°C 至 125°C

– 人体放电模式 (HBM) 静电放电 (ESD) 分类等级

– 组件充电模式 (CDM) ESD 分类等级 C6

• 低偏移误差和漂移：

25°C 时为 ±200µV，±3 µV/°C

• 固定增益 = 8.2

• 超低增益误差和漂移：

25°C 时为 ±0.3%，±50ppm/°C

• 超低非线性度和漂移：

0.03%，1ppm/°C

• 高侧和低侧以 3.3V 电压运行

• 系统级诊断特性

• 安全相关认证：

– 7000 V

增强型隔离，符合

DIN V VDE-V 0884-10 (VDE-V 0884-10):

2006-12 标准

– 符合 UL 1577 标准且长达 1 分钟的 5000 V

RMS

隔离

– CAN/CSA No. 5A 组件验收服务通知

2 应应用用

• 基于分流的电流感测或基于电阻分压器的电压感测

输入：

– 牵引逆变器

– 板载充电器 (OBC)

– 直流-直流转换器

– 电池管理系统 (BMS)

3 说说明明

AMC1301-Q1 器件是一款隔离式精密放大器，此放大

器的输出与输入电路由抗电磁干扰性能极强的隔离层隔

开。根据 VDE V 0884-10 和 UL1577 标准，该隔离栅

经认证可提供高达 7 kV

PEAK

的增强型电流隔离。当与

隔离电源配合使用时，该器件可防止共模高电压线路上

的噪声电流流入本地接地并干扰或损害敏感电路。

AMC1301-Q1 器件的输入针对直接连接分流电阻器或

其他低电压等级信号源的情况进行了优化。该器件性能

优异，支持精确电流控制，从而降低系统级功耗（尤

其在电机控制应用中）并减少扭矩纹波。该器件

(AMC1301-Q1) 的集成共模过压和高侧电源电压缺失

检测特性可简化系统级设计和诊断。

AMC1301-Q1 器件可提供宽体 8 引脚 SOIC (DWV) 封

装。

器器件件信信息息

(1)

器器件件型型号号封封装装封封装装尺尺寸寸（（标标称称值值））

AMC1301-Q1 SOIC (8) 5.85mm × 7.50mm

(1) 要了解所有可用封装，请参阅数据表末尾的可订购产品附录。

简简化化电电路路原原理理图图

AMC1301-Q1

ZHCSG74A –APRIL 2017–REVISED APRIL 2017

www.ti.com.cn

目目录录

1 特特性性.......................................................................... 1

2 应应用用.......................................................................... 1

3 说说明明.......................................................................... 1

4 修修订订历历史史记记录录 ........................................................... 2

5 Pin Configuration and Functions......................... 3

6 Specifications......................................................... 4

6.1 Absolute Maximum Ratings ...................................... 4

6.2 ESD Ratings.............................................................. 4

6.3 Recommended Operating Conditions....................... 4

6.4 Thermal Information.................................................. 4

6.5 Power Ratings........................................................... 4

6.6 Insulation Specifications............................................ 5

6.7 Safety-Related Certifications..................................... 6

6.8 Safety Limiting Values .............................................. 6

6.9 Electrical Characteristics........................................... 6

6.10 Insulation Characteristics Curves .......................... 8

6.11 Typical Characteristics............................................ 9

7 Parameter Measurement Information ................ 16

7.1 Timing Diagrams..................................................... 16

8 Detailed Description............................................ 17

8.1 Overview ................................................................. 17

8.2 Functional Block Diagram ....................................... 17

8.3 Feature Description................................................. 17

8.4 Device Functional Modes........................................ 18

9 Application and Implementation ........................ 19

9.1 Application Information............................................ 19

9.2 Typical Applications ................................................ 19

9.3 Do's and Don'ts ...................................................... 23

10 Power Supply Recommendations ..................... 24

11 Layout................................................................... 25

11.1 Layout Guidelines ................................................. 25

11.2 Layout Example .................................................... 25

12 器器件件和和文文档档支支持持 ..................................................... 26

12.1 文档支持 ............................................................... 26

12.2 接收文档更新通知 ................................................. 26

12.3 社区资源................................................................ 26

12.4 商标 ....................................................................... 26

12.5 静电放电警告......................................................... 26

12.6 Glossary................................................................ 26

13 机机械械、、封封装装和和可可订订购购信信息息....................................... 26

4 修修订订历历史史记记录录

注：之前版本的页码可能与当前版本有所不同。

Changes from Original (April 2017) to Revision A Page

• Changed maximum specification of Supply voltage row in Absolute Maximum Ratings table from 6.5 V to 7 V ................. 4

AMC1301-Q1

ZHCSG74A –APRIL 2017–REVISED APRIL 2017

www.ti.com.cn

(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings

only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended

Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

6 Specifications

6.1 Absolute Maximum Ratings

(1)

MIN MAX UNIT

Supply voltage, VDD1 to GND1 or VDD2 to GND2 –0.3 7 V

Analog input voltage at VINP, VINN GND1 – 6 VDD1 + 0.5 V

Input current to any pin except supply pins –10 10 mA

Junction temperature, T

150 °C

Storage temperature, T

stg

–65 150 °C

(1) AEC Q100-002 indicates HBM stressing is done in accordance with the ANSI/ESDA/JEDEC JS-001 specification.

6.2 ESD Ratings

VALUE UNIT

(ESD)

Electrostatic discharge

Human body model (HBM), per AEC Q100-002

(1)

±2000

Charged device model (CDM), per AEC Q100-011 ±1000

6.3 Recommended Operating Conditions

over operating ambient temperature range (unless otherwise noted)

MIN NOM MAX UNIT

VDD1 High-side supply voltage (VDD1 to GND1) 3.0 5.0 5.5 V

VDD2 Low-side supply voltage (VDD2 to GND2) 3.0 3.3 5.5 V

Operating ambient temperature –40 125 °C

(1) For more information about traditional and new thermal metrics, see Semiconductor and IC Package Thermal Metrics, SPRA953.

6.4 Thermal Information

THERMAL METRIC

(1)

AMC1301-Q1

UNITDWV (SOIC)

8 PINS

θJA

Junction-to-ambient thermal resistance 110.1 °C/W

θJC(top)

Junction-to-case (top) thermal resistance 51.7 °C/W

θJB

Junction-to-board thermal resistance 66.4 °C/W

Junction-to-top characterization parameter 16.0 °C/W

Junction-to-board characterization parameter 64.5 °C/W

θJC(bot)

Junction-to-case (bottom) thermal resistance N/A °C/W

6.5 Power Ratings

PARAMETER TEST CONDITIONS VALUE UNIT

Maximum power dissipation (both sides)

VDD1 = VDD2 = 5.5 V

81.4 mW

Maximum power dissipation (high-side supply) 45.65 mW

Maximum power dissipation (low-side supply) 35.75 mW

AMC1301-Q1

www.ti.com.cn

ZHCSG74A –APRIL 2017–REVISED APRIL 2017

(1) Apply creepage and clearance requirements according to the specific equipment isolation standards of an application. Care must be

taken to maintain the creepage and clearance distance of a board design to ensure that the mounting pads of the isolator on the printed

circuit board (PCB) do not reduce this distance. Creepage and clearance on a PCB become equal in certain cases. Techniques such as

inserting grooves and ribs on the PCB are used to help increase these specifications.

(2) This coupler is suitable for safe electrical insulation only within the safety ratings. Compliance with the safety ratings shall be ensured by

means of suitable protective circuits.

(3) Testing is carried out in air or oil to determine the intrinsic surge immunity of the isolation barrier.

(4) Apparent charge is electrical discharge caused by a partial discharge (pd).

(5) All pins on each side of the barrier are tied together, creating a two-pin device.

6.6 Insulation Specifications

over operating ambient temperature range (unless otherwise noted)

PARAMETER TEST CONDITIONS VALUE UNIT

GENERAL

CLR External clearance

(1)

Shortest pin-to-pin distance through air ≥ 9 mm

CPG External creepage

(1)

Shortest pin-to-pin distance across the package

surface

≥ 9 mm

DTI Distance through insulation

Minimum internal gap (internal clearance) of the

double insulation (2 × 0.0135 mm)

≥ 0.027 mm

CTI Comparative tracking index DIN EN 60112 (VDE 0303-11); IEC 60112 ≥ 600 V

Material group According to IEC 60664-1 I

Overvoltage category per IEC 60664-1

Rated mains voltage ≤ 300 V

RMS

I-IV

Rated mains voltage ≤ 600 V

RMS

I-III

Rated mains voltage ≤ 1000 V

RMS

I-II

DIN V VDE V 0884-10 (VDE V 0884-10): 2006-12

(2)

IORM

Maximum repetitive peak isolation

voltage

At ac voltage (bipolar) 1500 V

IOWM

Maximum-rated isolation working

voltage

At ac voltage (sine wave) 1000 V

RMS

At dc voltage 1500 V

IOTM

Maximum transient isolation voltage

TEST

= V

IOTM

, t = 60 s (qualification test) 7000

TEST

= 1.2 × V

IOTM

, t = 1 s (100% production test) 8400

IOSM

Maximum surge isolation voltage

(3)

Test method per IEC 60065, 1.2/50-μs waveform,

TEST

= 1.6 × V

IOSM

= 10000 V

(qualification)

6250 V

Apparent charge

(4)

Method a, after input/output safety test subgroup 2 / 3,

ini

= V

IOTM

, t

ini

= 60 s,

pd(m)

= 1.2 × V

IORM

= 1800 V

, t

= 10 s

≤ 5

Method a, after environmental tests subgroup 1,

ini

= V

IOTM

, t

ini

= 60 s,

pd(m)

= 1.6 × V

IORM

= 2400 V

, t

= 10 s

≤ 5

Method b1, at routine test (100% production) and

preconditioning (type test), V

ini

= V

IOTM

, t

ini

= 1 s,

pd(m)

= 1.875 × V

IORM

= 2812.5 V

, t

= 1 s

≤ 5

Barrier capacitance, input to output

(5)

= 0.5 V

at 1 MHz 1.2 pF

Insulation resistance, input to output

(5)

= 500 V at T

= 150°C > 10

Pollution degree 2

Climatic category 40/125/21

UL1577

ISO

Withstand isolation voltage

TEST

= V

ISO

= 5000 V

RMS

or 7000 V

, t = 60 s

(qualification), V

TEST

= 1.2 × V

ISO

= 6000 V

RMS

, t = 1 s

(100% production test)

5000 V

RMS

剩余33页未读，继续阅读

评论收藏

内容反馈

TI-AMC1301-Q1.pdf

评论0

最新资源

TI-AMC1301-Q1.pdf

评论0

最新资源

相关推荐

TI-AMC1301.pdf

TI-TLC6C5748-Q1.pdf

TI-SN74HCS165-Q1.pdf

TI-SN74LVC1G98-Q1.pdf

TI-DP83TC814S-Q1.pdf

TI-AMC23C12-Q1.pdf

TI-AMC22C12-Q1.pdf

TI-AMC1305M25-Q1.pdf

TI-AMC3301-Q1.pdf

TI-UCC27212A-Q1.pdf

TI-TUSB217-Q1.pdf

TI-UCC2946-Q1.pdf

TI-DS90UH949A-Q1.pdf

TI-TMP61-Q1.pdf

TI-AMC3330-Q1.pdf

TI-AMC3302-Q1.pdf

TI-AMC1411-Q1.pdf

TI-AMC1351-Q1.pdf

TI-AMC1350-Q1.pdf

TI-TLV3603-Q1.pdf

TI-DS90LV011AQ-Q1.pdf

TI-TPS92515-Q1.pdf

TI-DS90UR916Q-Q1.pdf

TI-LM74701-Q1.pdf

TI-AMC1400-Q1.pdf

TI-AMC1200-Q1.pdf

TI-AMC1211-Q1.pdf

TI-AMC1302-Q1.pdf

TI-AMC1311-Q1.pdf