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TI-AMC1311-Q1.pdf
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VOUTP
VOUTN
VDD2
GND2
GND1
SHTDN
VIN
VDD1
AMC1311B-Q1
HV+
HV-
Power Supply
3.0 V to 5.5 V
R
3
Gate
Driver
Gate
Driver
3.0 V to 5.5 V
Reinforced Isolation
R
2
R
1
GND
R
F
C
F
VDD1
Detection
ADC121S101-Q1
12-Bit ADC
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An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.
English Data Sheet: SBAS897
AMC1311-Q1
ZHCSHJ1A –MARCH 2018–REVISED JUNE 2018
AMC1311x-Q1 高高阻阻抗抗 2V 输输入入增增强强型型隔隔离离放放大大器器
1
1 特特性性
1
• 符合汽车类应用的 标准
• 具有符合 AEC-Q100 标准的下列特性:
– 器件温度 1 级:–40°C 至 125°C 的环境工作温
度范围
– 器件 HBM ESD 分类等级 2
– 器件 CDM ESD 分类等级 C6
• 2V 高阻抗输入电压范围,针对隔离式电压测量进
行优化
• 低失调误差和温漂:
– AMC1311B-Q1:±1.5mV(最大值),±15µV/°
C(最大值)
– AMC1311-Q1:±9.9mV(最大值),±20µV/°C
(典型值)
• 固定增益:1
• 极低增益误差和温漂:
– AMC1311B-Q1:±0.3%(最大值),±45ppm/°
C(最大值)
– AMC1311-Q1:±1%(最大值),±30ppm/°C
(典型值)
• 低非线性和温漂:0.01%,1ppm/°C(典型值)
• 高侧 3.3V 运行电压 (AMC1311B-Q1)
• 高侧电源缺失指示
• 安全相关认证:
– 符合 DIN V VDE V 0884-11 (VDE V 0884-11):
2017-01 标准的 7000 V
PK
增强型隔离
– 符合 UL1577 标准且长达 1 分钟的 5000V
RMS
隔离
– CAN/CSA No. 5A 组件验收服务通知
2 应应用用
• 可用于以下应用的隔离式电压检测:
– 牵引逆变器
– 板载充电器
– 直流/直流转换器
3 说说明明
AMC1311-Q1 是一款隔离式精密放大器,此放大器的
输出与输入电路由抗电磁干扰性能极强的隔离栅隔开。
根据 VDE V 0884-11 和 UL1577 标准,该隔离栅经认
证可提供高达 7kV
PEAK
的增强型电隔离。与隔离式电
源结合使用时,该隔离放大器可将以不同共模电压电平
运行的系统的各器件隔开,并防止较低电压器件损坏。
AMC1311-Q1 的高阻抗输入针对连接高压电阻分压器
或具有高输出电阻的其他电压信号源的情况进行了优
化。器件性能出色,支持在闭环系统中进行精确的低温
漂电压或温度检测和控制。集成的高侧电源电压缺失检
测功能可简化系统级设计和诊断。
AMC1311-Q1 提供两种性能级别选项:AMC1311-Q1
和 AMC1311B-Q1。
器器件件信信息息
(1)
器器件件编编号号 封封装装 封封装装尺尺寸寸((标标称称值值))
AMC1311x-Q1 SOIC (8) 5.85mm × 7.50mm
(1) 如需了解所有可用封装,请参阅产品说明书末尾的可订购产品
附录。
简简化化原原理理图图
2
AMC1311-Q1
ZHCSHJ1A –MARCH 2018–REVISED JUNE 2018
www.ti.com.cn
版权 © 2018, Texas Instruments Incorporated
目目录录
1 特特性性.......................................................................... 1
2 应应用用.......................................................................... 1
3 说说明明.......................................................................... 1
4 修修订订历历史史记记录录 ........................................................... 2
5 器器件件比比较较表表............................................................... 3
6 Pin Configuration and Functions......................... 3
7 Specifications......................................................... 4
7.1 Absolute Maximum Ratings ...................................... 4
7.2 ESD Ratings.............................................................. 4
7.3 Recommended Operating Conditions....................... 4
7.4 Thermal Information.................................................. 5
7.5 Power Ratings........................................................... 5
7.6 Insulation Specifications............................................ 6
7.7 Safety-Related Certifications..................................... 7
7.8 Safety Limiting Values .............................................. 7
7.9 Electrical Characteristics........................................... 8
7.10 Switching Characteristics...................................... 10
7.11 Insulation Characteristics Curves ........................ 11
7.12 Typical Characteristics.......................................... 12
8 Detailed Description............................................ 19
8.1 Overview ................................................................. 19
8.2 Functional Block Diagram ....................................... 19
8.3 Feature Description................................................. 19
8.4 Device Functional Modes........................................ 21
9 Application and Implementation ........................ 22
9.1 Application Information............................................ 22
9.2 Typical Application .................................................. 22
9.3 Do's and Don'ts ...................................................... 24
10 Power Supply Recommendations ..................... 25
11 Layout................................................................... 26
11.1 Layout Guidelines ................................................. 26
11.2 Layout Example .................................................... 26
12 器器件件和和文文档档支支持持 ..................................................... 27
12.1 文档支持 ............................................................... 27
12.2 接收文档更新通知 ................................................. 27
12.3 社区资源................................................................ 27
12.4 商标 ....................................................................... 27
12.5 静电放电警告......................................................... 27
12.6 术语表 ................................................................... 27
13 机机械械、、封封装装和和可可订订购购信信息息....................................... 27
4 修修订订历历史史记记录录
注:之前版本的页码可能与当前版本有所不同。
Changes from Original (March 2018) to Revision A Page
• 已投入量产.............................................................................................................................................................................. 1
1VDD1 8 VDD2
2VIN 7 VOUTP
3SHTDN 6 VOUTN
4GND1 5 GND2
Not to scale
3
AMC1311-Q1
www.ti.com.cn
ZHCSHJ1A –MARCH 2018–REVISED JUNE 2018
版权 © 2018, Texas Instruments Incorporated
5 器器件件比比较较表表
参参数数 AMC1311B-Q1 AMC1311-Q1
高侧电源电压,VDD1 3.0V 至 5.5V 4.5V 至 5.5V
额定环境温度,T
A
–40°C 至 +125°C -40°C 至 125°C
输入失调电压,V
OS
4.5V ≤ VDD1 ≤ 5.5V ±1.5mV ±9.9mV
3.0V ≤ VDD1 ≤ 5.5V ±2.5mV 不适用
输入失调电压温漂,TCV
OS
±3µV/°C(典型值),±15µV/°C(最
大值)
±20µV/°C(典型值)
增益误差,E
G
±0.3% ±1%
增益误差漂移,TCE
G
±5ppm/°C(典型值),±45ppm/°C
(最大值)
±30ppm/°C(典型值)
共模瞬态抗扰度,CMTI 75kV/µs(最小值) 15kV/µs(最小值)
6 Pin Configuration and Functions
DWV Package
8-Pin SOIC
Top View
Pin Functions
PIN
TYPE DESCRIPTION
NO. NAME
1 VDD1 —
High-side power supply, 3.0 V to 5.5 V for the AMC1311B-Q1 (4.5 V to 5.5 V for the AMC1311-Q1),
relative to GND1. See the Power Supply Recommendations section for power-supply decoupling
recommendations.
2 VIN I Analog input
3 SHTDN I Shutdown input, active high, with internal pullup resistor (typical value: 100 kΩ)
4 GND1 — High-side analog ground
5 GND2 — Low-side analog ground
6 VOUTN O Inverting analog output
7 VOUTP O Noninverting analog output
8 VDD2 —
Low-side power supply, 3.0 V to 5.5 V, relative to GND2.
See the Power Supply Recommendations section for power-supply decoupling recommendations.
4
AMC1311-Q1
ZHCSHJ1A –MARCH 2018–REVISED JUNE 2018
www.ti.com.cn
Copyright © 2018, Texas Instruments Incorporated
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings
only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended
Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
7 Specifications
7.1 Absolute Maximum Ratings
(1)
MIN MAX UNIT
Power-supply voltage
VDD1 to GND1 –0.3 6.5
V
VDD2 to GND2 –0.3 6.5
Input voltage
VIN GND1 – 6 VDD1 + 0.5
V
SHTDN GND1 – 0.5 VDD1 + 0.5
Output voltage VOUTP, VOUTN GND2 – 0.5 VDD2 + 0.5 V
Input current Continuous, any pin except power-supply pins –10 10 mA
Temperature
Junction, T
J
150
°C
Storage, T
stg
–65 150
(1) AEC Q100-002 indicates that HBM stressing shall be in accordance with the ANSI/ESDA/JEDEC JS-001 specification.
7.2 ESD Ratings
VALUE UNIT
V
(ESD)
Electrostatic discharge
Human-body model (HBM), per AEC Q100-002
(1)
±2000
V
Charged-device model (CDM), per AEC Q100-011 ±1000
7.3 Recommended Operating Conditions
over operating ambient temperature range (unless otherwise noted)
MIN NOM MAX UNIT
POWER SUPPLY
High-side power supply
VDD1 to GND1, AMC1311-Q1 4.5 5 5.5
V
VDD1 to GND1, AMC1311B-Q1 3.0 5 5.5
Low-side power supply VDD2 to GND2 3.0 3.3 5.5 V
ANALOG INPUT
Absolute input voltage VIN to GND1 –2 VDD1 V
V
FSR
Specified linear input full-scale voltage VIN to GND1 –0.1 2 V
V
Clipping
Input voltage before clipping output VIN to GND1 2.516 V
DIGITAL INPUT
Input voltage SHTDN GND1 VDD1 V
TEMPERATURE RANGE
T
A
Specified ambient temperature –40 125 °C
5
AMC1311-Q1
www.ti.com.cn
ZHCSHJ1A –MARCH 2018–REVISED JUNE 2018
Copyright © 2018, Texas Instruments Incorporated
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application
report.
7.4 Thermal Information
THERMAL METRIC
(1)
AMC1311x-Q1
UNITDWV (SOIC)
8 PINS
R
θJA
Junction-to-ambient thermal resistance 84.6 °C/W
R
θJC(top)
Junction-to-case (top) thermal resistance 28.3 °C/W
R
θJB
Junction-to-board thermal resistance 41.1 °C/W
ψ
JT
Junction-to-top characterization parameter 4.9 °C/W
ψ
JB
Junction-to-board characterization parameter 39.1 °C/W
R
θJC(bot)
Junction-to-case (bottom) thermal resistance N/A °C/W
7.5 Power Ratings
PARAMETER TEST CONDITIONS VALUE UNIT
P
D
Maximum power dissipation (both sides)
VDD1 = VDD2 = 5.5 V 97.9
mW
VDD1 = VDD2 = 3.6 V, AMC1311B-Q1 only 56.16
P
D1
Maximum power dissipation (high-side supply)
VDD1 = 5.5 V 53.35
mW
VDD1 = 3.6 V, AMC1311B-Q1 only 30.24
P
D2
Maximum power dissipation (low-side supply)
VDD2 = 5.5 V 44.55
mW
VDD2 = 3.6 V 25.92
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