没有合适的资源?快使用搜索试试~ 我知道了~
TI-TPS65160A.pdf
需积分: 10 0 下载量 174 浏览量
2022-11-19
23:48:38
上传
评论 5
收藏 1.52MB PDF 举报
温馨提示
试读
31页
TI-TPS65160A.pdf
资源详情
资源评论
COMP
VINB
FREQ
EN1
EN2
DRN
FBN
REF
PGND
PGND
SW
SW
AVIN
FB
GND
OS
DRP
FBP
Boot
SWB
NC
DLY1
TPS65160
SS
VINB
GD
FBB
DLY2
SUP
12 V
C1
2*22 F
C3
1 F
C16
1 F
C6
0.47 FD2
D3
VGL
−5 V/50 mA
R3
620 k
R4
150 k
C8
220 nF
C7
470 F
C9
22 nF
C10
10 nF
C11
10 nF
C17
22 nF
R8
1.2 k
R7
2 k
D6
SL22
L2
15 H
Cb
100 nF
R6
56 k
C14
10 nF
C12
2*22 F
3.3 V/1.5 A
C13
0.47 F
R5
1 M
VGH
23 V/50 mA
D5
D4
GD
0.47 F
C5
C15
470 nF
R2
56 k
R1
680 k
C2
3* 22 F
C4
22 pF
D1
SL22
L1
10 H
15 V/1.5 A
8
12
20
21
22
16
9
11
13
24
6
7
28
25
4
5
1
3
23
27
10
14
17
18
19
15
2
26
V
IN
V
LOGIC
V
S
TPS65160, TPS65160A
www.ti.com
SLVS566C –MARCH 2005–REVISED MARCH 2013
BIAS POWER SUPPLY FOR TV AND MONITOR TFT LCD PANELS
Check for Samples: TPS65160, TPS65160A
1
FEATURES
• Internal and Adjustable Soft Start
• Short-Circuit Protection
2
• 8-V to 14-V Input Voltage Range
• 23-V (TPS65160) Overvoltage Protection
• V
S
Output Voltage Range up to 20 V
• 19.5-V (TPS65160A) Overvoltage Protection
• 1% Accurate Boost Converter With 2.8-A
Switch Current
• Thermal Shutdown
• 1.5% accurate 1.8-A Step-Down Converter
• Available in HTSSOP-28 Package
• 500-kHz/750-kHz Fixed Switching Frequency
APPLICATIONS
• Negative Charge Pump Driver for VGL
• TFT LCD Displays for Monitor and LCD TV
• Positive Charge Pump Driver for VGH
• Adjustable Sequencing for VGL, VGH
• Gate Drive Signal to Drive External MOSFET
DESCRIPTION
The TPS65160 offers a compact power supply solution to provide all four voltages required by thin-film transistor
(TFT) LCD panel. With its high current capabilities, the device is ideal for large screen monitor panels and LCD
TV applications.
TYPICAL APPLICATION
1
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
2PowerPAD is a trademark of Texas Instruments.
PRODUCTION DATA information is current as of publication date.
Copyright © 2005–2013, Texas Instruments Incorporated
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
TPS65160, TPS65160A
SLVS566C –MARCH 2005–REVISED MARCH 2013
www.ti.com
This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with
appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.
ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more
susceptible to damage because very small parametric changes could cause the device not to meet its published specifications.
DESCRIPTION (CONTINUED)
The device can be powered directly from a 12-V input voltage generating the bias voltages VGH and VGL, as
well as the source voltage V
S
and logic voltage for the LCD panels. The device consists of a boost converter to
provide the source voltage V
S
and a step-down converter to provide the logic voltage for the system. A positive
and a negative charge-pump driver provide adjustable regulated output voltages VGL and VGH to bias the TFT.
Both boost and step-down converters, as well as the charge-pump driver, operate with a fixed switching
frequency of 500 kHz or 750 kHz, selectable by the FREQ pin. The TPS65160 includes adjustable power-on
sequencing. The device includes safety features like overvoltage protection of the boost converter and short-
circuit protection of the buck converter, as well as thermal shutdown. Additionally, the device incorporates a gate
drive signal to control an isolation MOSFET switch in series with V
S
or VGH. See the application circuits at the
end of this data sheet.
ORDERING INFORMATION
(1)
T
A
UVLO Overvoltage protection ORDERING PACKAGE
(2)
PACKAGE
(typ) Vs (typ) MARKING
6 V 23 V TPS65160PWP HTSSOP28 (PWP) TPS65160
–40°C to 85°C
8 V 19.5 V TPS65160APWP HTSSOP28 (PWP) TPS65160A
(1) For the most current package and ordering information, see the Package Option Addendum at the end of this document, or see the TI
website at www.ti.com.
(2) The PWP package is available taped and reeled. Add R-suffix to the device type (TPS65160PWPR) to order the device taped and
reeled. The TPS65160PWPR package has quantities of 2000 devices per reel. Without suffix, the TPS65160PWP is shipped in tubes
with 50 devices per tube.
ABSOLUTE MAXIMUM RATINGS
over operating free-air temperature range (unless otherwise noted)
(1)
UNIT
Voltages on pin VIN, SUP
(2)
–0.3 V to 16.5 V
Voltages on pin EN1, EN2, FREQ
(2)
–0.3 V to 15 V
Voltage on pin SW
(2)
25 V
Voltage on pin SWB
(2)
20 V
Voltages on pin OS, GD
(2)
25 V
Continuous power dissipation See Dissipation Rating Table
T
A
Operating junction temperature –40°C to 150°C
T
stg
Storage temperature range –65°C to 150°C
Temperature (soldering, 10 s) 260°C
(1) Stresses beyond those listed under absolute maximum ratings may cause permanent damage to the device. These are stress ratings
only, and functional operation of the device at these or any other conditions beyond those indicated under recommended operating
conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2) All voltage values are with respect to network ground terminal.
DISSIPATION RATINGS
T
A
≤ 25°C T
A
= 70°C T
A
= 85°C
PACKAGE RTH
JA
POWER RATING POWER RATING POWER RATING
28-Pin HTSSOP 28°C/W (PowerPAD
(1)
soldered) 3.57 W 1.96 W 1.42 W
(1) See Texas Instruments application report SLMA002 regarding thermal characteristics of the PowerPAD package.
2 Submit Documentation Feedback Copyright © 2005–2013, Texas Instruments Incorporated
Product Folder Links: TPS65160 TPS65160A
TPS65160, TPS65160A
www.ti.com
SLVS566C –MARCH 2005–REVISED MARCH 2013
RECOMMENDED OPERATING CONDITIONS
over operating free-air temperature range (unless otherwise noted)
MIN NOM MAX UNIT
V
S
Output voltage range of the main boost converter TPS65160 20 V
TPS65160A 17.5 V
V
SUP
Maximum operating voltage at the charge-pump driver supply pin SUP 15 V
Input capacitor at VINB 2x22 µF
C
IN
Input capacitor AVIN 1 µF
Inductor boost converter
(1)
10
L µH
Inductor buck converter
(1)
15
V
LOGIC
Output voltage range of the step-down converter V
LOGIC
1.8 5.0 V
Output capacitor boost converter 3x22
C
O
µF
Output capacitor buck converter 2x22
T
A
Operating ambient temperature –40 85 °C
T
J
Operating junction temperature –40 125 °C
(1) See application section for further information.
ELECTRICAL CHARACTERISTICS
V
IN
= 12 V, SUP = V
IN
, EN1 = EN2 = V
IN
, V
S
= 15 V, V
LOGIC
= 3.3 V, T
A
= –40°C to 85°C, typical values are at T
A
= 25°C
(unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
SUPPLY CURRENT
TPS65160 8 14 V
V
IN
Input voltage range
TPS65160A 9.2 14 V
VGH = 2 × V
S
,
Quiescent current into AVIN Boost converter not 0.2 2
switching
I
QIN
mA
VGH = 2 × V
S
,
Quiescent current into VINB Buck converter not 0.2 0.5
switching
Shutdown current into AVIN EN1 = EN2 = GND 0.1 2
I
SD
µA
Shutdown current into VINB EN1 = EN2 = GND 0.1 2
Shutdown current into SUP EN1 = EN2 = GND 0.1 4 µA
I
SUP
Quiescent current into SUP VGH = 2 × V
S
0.2 2 mA
TPS65160 V
IN
falling 6 6.4 V
V
UVLO
Undervoltage lockout threshold
TPS65160A V
IN
falling 8 8.8 V
V
REF
Reference voltage 1.203 1.213 1.223 V
Thermal shutdown Temperature rising 155 °C
Thermal shutdown hysteresis 5 °C
LOGIC SIGNALS EN1, EN2, FREQ
V
IH
High-level input voltage EN1, EN2 2.0 V
V
IL
Low-level input voltage EN1, EN2 0.8 V
V
IH
High-level input voltage FREQ 1.7 V
V
IL
Low-level input voltage FREQ 0.4 V
EN1 = EN2 = FREQ = 0.01 0.1 µA
I
I
Input leakage current
GND or V
IN
CONTROL AND SOFT START DLY1, DLY2, SS
I
DLY1
Delay1 charge current 3.3 4.8 6.2 µA
I
DLY2
Delay2 charge current V
THRESHOLD
= 1.213 V 3.3 4.8 6.2 µA
I
SS
SS charge current 6 9 12 µA
Copyright © 2005–2013, Texas Instruments Incorporated Submit Documentation Feedback 3
Product Folder Links: TPS65160 TPS65160A
TPS65160, TPS65160A
SLVS566C –MARCH 2005–REVISED MARCH 2013
www.ti.com
ELECTRICAL CHARACTERISTICS (continued)
V
IN
= 12 V, SUP = V
IN
, EN1 = EN2 = V
IN
, V
S
= 15 V, V
LOGIC
= 3.3 V, T
A
= –40°C to 85°C, typical values are at T
A
= 25°C
(unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
INTERNAL OSCILLATOR
FREQ = high 600 750 900
f
OSC
Oscillator frequency kHz
FREQ = low 400 500 600
BOOST CONVERTER (V
S
)
TPS65160 20 V
V
S
Output voltage range
TPS65160A 17.5 V
V
FB
Feedback regulation voltage 1.136 1.146 1.156 V
I
FB
Feedback input bias current 10 100 nA
N-MOSFET on-resistance (Q1) I
SW
= 500 mA 100 185 mΩ
r
DS(on)
P-MOSFET on-resistance (Q2) I
SW
= 200 mA 10 16 Ω
I
MAX
Maximum P-MOSFET peak switch current 1 A
I
LIM
N-MOSFET switch current limit (Q1) 2.8 3.5 4.2 A
Ileak Switch leakage current V
SW
= 15 V 1 10 µA
TPS65160 V
OUT
rising 22 23 24.5 V
Vovp Overvoltage protection
TPS65160A V
OUT
rising 18 19.5 20.5 V
10.6 V ≤ Vin ≤ 11.6 V
Line regulation 0.0008 %/V
at 1 mA
Load regulation 0.03 %/A
GATE DRIVE (GD)
V
GD
Gate drive threshold
(1)
V
FB
rising Vs-12% Vs-8% Vs-4% V
V
OL
GD output low voltage I
(sink)
= 500 µA 0.3 V
GD output leakage current VGD = 20 V 0.05 1 µA
STEP-DOWN CONVERTER (V
LOGIC
)
V
LOGIC
Output voltage range 1.8 5 V
V
FBB
Feedback regulation voltage 1.195 1.213 1.231 V
I
FBB
Feedback input bias current 10 100 nA
r
DS(ON)
N-MOSFET on-resistance (Q1) I
SW
= 500 mA 175 300 mΩ
I
LIM
N-MOSFET switch current limit (Q1) 2 2.6 3.3 A
Ileak Switch leakage current V
SW
= 0 V 1 10 µA
10.6 V ≤ V
IN
≤ 11.6 V
Line regulation 0.0018 %/V
at 1 mA
Load regulation 0.037 %/A
(1) The GD signal is latched low when the main boost converter output V
S
is within regulation. The GD signal is reset when the input
voltage or enable of the boost converter is cycled low.
4 Submit Documentation Feedback Copyright © 2005–2013, Texas Instruments Incorporated
Product Folder Links: TPS65160 TPS65160A
1
2
3
4
5
6
7
8
9
10
11
12
28
27
26
25
24
23
22
21
20
19
18
17
FB
COMP
OS
SW
SW
PGND
PGND
SUP
EN2
DRP
DRN
FREQ
SS
GD
DLY2
DLY1
REF
GND
AVIN
VINB
VINB
NC
SWB
BOOT
Thermal PAD (see Note)
13
14
16
15
FBN
FBP
EN1
FBB
TPS65160, TPS65160A
www.ti.com
SLVS566C –MARCH 2005–REVISED MARCH 2013
ELECTRICAL CHARACTERISTICS (continued)
V
IN
= 12 V, SUP = V
IN
, EN1 = EN2 = V
IN
, V
S
= 15 V, V
LOGIC
= 3.3 V, T
A
= –40°C to 85°C, typical values are at T
A
= 25°C
(unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
NEGATIVE CHARGE-PUMP VGL
VGL Output voltage range –2 V
V
FBN
Feedback regulation voltage –36 0 36 mV
I
FBN
Feedback input bias current 10 100 nA
r
DS(ON)
Q4 P-Channel switch r
DS(ON)
I
OUT
= 20 mA 4.4 Ω
I
DRN
= 50 mA,
130 190
V
FBN
= V
FBNnominal
–5%
V
DropN
Current sink voltage drop
(2)
mV
I
DRN
= 100 mA,
270 420
V
FBN
= V
FBNnominal
–5%
POSITIVE CHARGE-PUMP OUTPUT VGH
V
FBP
Feedback regulation voltage 1.187 1.213 1.238 V
I
FBP
Feedback input bias current 10 100 nA
r
DS(ON)
Q3 N-Channel switch r
DS(ON)
I
OUT
= 20 mA 1.1 Ω
I
DRP
= 50 mA,
400 680
V
FBP
= V
FBPnominal
–5%
Current source voltage drop
V
DropP
mV
(Vsup – V
DRP
)
(3)
I
DRP
= 100 mA,
850 1600
V
FBP
= V
FBPnominal
–5%
(2) The maximum charge-pump output current is typically half the drive current of the internal current source or current sink.
(3) The maximum charge-pump output current is typically half the drive current of the internal current source or current sink.
NOTE: The thermally enhanced PowerPAD™ is connected to PGND.
Copyright © 2005–2013, Texas Instruments Incorporated Submit Documentation Feedback 5
Product Folder Links: TPS65160 TPS65160A
剩余30页未读,继续阅读
安全验证
文档复制为VIP权益,开通VIP直接复制
信息提交成功
评论0
最新资源