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TI-DRV5013.pdf
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B (mT)
OUT
B
OP
(South)
B
RP
(North)
B
OF
B
hys
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本文档旨在为方便起见,提供有关 TI 产品中文版本的信息,以确认产品的概要。 有关适用的官方英文版本的最新信息,请访问 www.ti.com,其内容始终优先。 TI 不保证翻译的准确
性和有效性。 在实际设计之前,请务必参考最新版本的英文版本。
English Data Sheet: SLIS150
DRV5013
ZHCSCA7K –MARCH 2014–REVISED AUGUST 2019
DRV5013 数数字字锁锁存存霍霍尔尔效效应应传传感感器器
1
1 特特性性
1
• 数字双极锁存霍尔传感器
• 出色的温度稳定性
– 工作温度范围内 B
OP
为 ±10%
• 多个灵敏度选项 (B
OP
/B
RP
)
– ±1.3mT(FA,请参阅
器件命名规则
)
– ±2.7mT(AD,请参阅
器件命名规则
)
– ±6mT(AG,请参阅
器件命名规则
)
– ±12mT(BC,请参阅
器件命名规则
)
• 支持宽电压范围
– 2.5V 至 38V
– 无需外部稳压器
• 宽工作温度范围
– T
A
= –40 至 +125°C(Q,请参阅
器件命名规
则
)
– T
A
= –40 至 +150°C(E,请参阅
器件命名规
则
)
• 开漏输出(30mA 灌电流)
• 快速开通时间 35µs
• 小型封装和外形尺寸
– 表面贴装 3 引脚 SOT-23 (DBZ)
– 2.92mm × 2.37mm
– 穿孔式 3 引脚 TO-92(LPG、LPE)
– 4.00mm × 3.15mm
• 保护 功能
– 反向电源保护(高达 -22V)
– 支持高达 40V 的负载突降
– 输出短路保护
– 输出电流限制
2 应应用用
• 电动工具
• 流量计
• 阀和电磁阀状态
• 无刷直流电机
• 接近传感
• 转速计
3 说说明明
DRV5013 器件是一款斩波稳定霍尔效应传感器,可提
供磁检测解决方案(在工作温度范围内具有出色的灵敏
度稳定性和集成保护 特性)。
磁场由数字双极锁存输出表示。该集成电路 (IC) 配有
一个灌电流能力达 30mA 的漏极开路输出级。该器件
具有 2.5V 至 38V 的宽工作电压范围,反极性保护高
达 –22V,因此适用于各种工业 应用。
针对反向电源条件、负载突降和输出短路或过流,提供
了内部保护功能。
器器件件信信息息
(1)
器器件件型型号号 封封装装 封封装装尺尺寸寸((标标称称值值))
DRV5013
SOT-23 (3) 2.92mm × 1.30mm
TO-92 (3) 4.00mm × 3.15mm
(1) 如需了解所有可用封装,请参阅数据表末尾的封装选项附录。
输输出出状状态态 器器件件封封装装
2
DRV5013
ZHCSCA7K –MARCH 2014–REVISED AUGUST 2019
www.ti.com.cn
版权 © 2014–2019, Texas Instruments Incorporated
目目录录
1 特特性性.......................................................................... 1
2 应应用用.......................................................................... 1
3 说说明明.......................................................................... 1
4 修修订订历历史史记记录录 ........................................................... 2
5 Pin Configuration and Functions......................... 4
6 Specifications......................................................... 5
6.1 Absolute Maximum Ratings ...................................... 5
6.2 ESD Ratings.............................................................. 5
6.3 Recommended Operating Conditions....................... 5
6.4 Thermal Information.................................................. 5
6.5 Electrical Characteristics........................................... 6
6.6 Switching Characteristics.......................................... 6
6.7 Magnetic Characteristics........................................... 7
6.8 Typical Characteristics.............................................. 8
7 Detailed Description............................................ 10
7.1 Overview ................................................................. 10
7.2 Functional Block Diagram ....................................... 10
7.3 Feature Description................................................. 11
7.4 Device Functional Modes........................................ 15
8 Application and Implementation ........................ 16
8.1 Application Information............................................ 16
8.2 Typical Applications ................................................ 16
9 Power Supply Recommendations...................... 19
10 Layout................................................................... 19
10.1 Layout Guidelines ................................................. 19
10.2 Layout Example .................................................... 19
11 器器件件和和文文档档支支持持 ..................................................... 20
11.1 器件支持................................................................ 20
11.2 接收文档更新通知 ................................................. 21
11.3 社区资源................................................................ 21
11.4 商标 ....................................................................... 21
11.5 静电放电警告......................................................... 21
11.6 Glossary................................................................ 21
12 机机械械、、封封装装和和可可订订购购信信息息....................................... 21
4 修修订订历历史史记记录录
注:之前版本的页码可能与当前版本有所不同。
Changes from Revision J (June 2019) to Revision K Page
• Changed T
J
to show existing range is for Q version device in the Absolute Maximum Ratings table................................... 5
• Added E version for T
J
to the Absolute Maximum Ratings table ........................................................................................... 5
• Changed T
A
to show existing range is for Q version device in the Recommended Operating Conditions table ................... 5
• Added E version for T
A
to the Recommended Operating Conditions table............................................................................ 5
• Changed I
CC
test condition for T
A
from 125 to T
A,MAX
to highlight the differences between the E and Q version devices..... 6
• Changed r
DS(on)
test condition for T
A
from 125 to T
A,MAX
to highlight the difference between the E and Q version devices.. 6
• Changed all test conditions for T
A
max from 125 to T
A,MAX
to highlight difference between the E and Q devices ............... 7
• Added new condition statement to Typical Characteristics section........................................................................................ 8
• Added data up to 150°C to Figure 1, Figure 2, Figure 4, Figure 6, Figure 8, and Figure 10................................................. 8
Changes from Revision I (August 2018) to Revision J Page
• 已添加 向数据表中添加了 TO-92 (LPE) 封装 ......................................................................................................................... 1
Changes from Revision H (September 2016) to Revision I Page
• Changed Power Supply Recommendations section ........................................................................................................... 19
Changes from Revision G (August 2016) to Revision H Page
• Changed the power-on time for the FA version in the Electrical Characteristics table .......................................................... 6
Changes from Revision F (May 2016) to Revision G Page
• Changed the maximum B
OP
and the minimum B
RP
for the FA version in the Magnetic Characteristics table....................... 7
• Added the Layout section..................................................................................................................................................... 19
3
DRV5013
www.ti.com.cn
ZHCSCA7K –MARCH 2014–REVISED AUGUST 2019
Copyright © 2014–2019, Texas Instruments Incorporated
Changes from Revision E (February 2016) to Revision F Page
• Revised preliminary limits for the FA version ......................................................................................................................... 7
Changes from Revision D (December 2015) to Revision E Page
• 已添加 添加了 FA 器件选项 .................................................................................................................................................... 1
• Added the typical bandwidth value to Magnetic Characteristics table ................................................................................... 7
Changes from Revision C (September 2014) to Revision D Page
• 已更正 SOT-23 封装体尺寸并将 SIP 封装名称更正为 TO-92 ................................................................................................ 1
• Added B
MAX
to Absolute Maximum Ratings ........................................................................................................................... 5
• Removed table note from junction temperature .................................................................................................................... 5
• 已更新封装卷带选项 M 和空白.............................................................................................................................................. 20
• 已添加
社区资源
.................................................................................................................................................................. 21
Changes from Revision B (July 2014) to Revision C Page
• 更新了高灵敏度选项 ............................................................................................................................................................... 1
• Changed the max operating junction temperature to 150°C ................................................................................................. 5
• Updated the output rise and fall time typical values and removed max values in Switching Characteristics ....................... 6
• Updated the values in Magnetic Characteristics ................................................................................................................... 7
• Updated all Typical Characteristics graphs ........................................................................................................................... 8
• Updated Equation 4 ............................................................................................................................................................. 17
• 已更新 图 24 ........................................................................................................................................................................ 20
Changes from Revision A (March 2014) to Revision B Page
• Changed I
OCP
MIN and MAX values from 20 and 40 to 15 and 45, respectively, in the Electrical Characteristics ............... 6
• Updated the hysteresis values for each device option in the Magnetic Characteristics table................................................ 7
• Changed the MIN value for the ±2.3 mt B
RP
parameter from –4 to –5 in the Magnetic Characteristics table ...................... 7
Changes from Original (March 2014) to Revision A Page
• 已更改 将所有霍尔 IC 参考更改为“霍尔效应传感器”............................................................................................................... 1
• 已更改 将 RPM
表
更改为
转速计
(在
应用
列表中) .............................................................................................................. 1
• 已更改 将加电值从 50µs 更改为 35µs(在
特性
列表中) ...................................................................................................... 1
• Changed the type of the OUT terminal from OD to Output in the Pin Functions table ......................................................... 4
• Deleted Output pin current and changed V
CC
max to V
CC
after the voltage ramp rate for the supply voltage........................ 5
• Changed R
O
to R1 in the test conditions for t
r
and t
f
in the Switching Characteristics table.................................................. 6
• Added the bandwidth parameter to Magnetic Characteristics table ...................................................................................... 7
• Changed the MIN value for the ±2.3 mt B
RP
parameter from +2.3 to –2.3 in the Magnetic Characteristics table ................ 7
• Deleted condition statement from the Typical Characteristics and changed all T
J
to T
A
in the graph conditions ................. 8
• Deleted Number from the Power-On Time case names; added conditions to captions of case timing diagrams .............. 12
• Added the R1 tradeoff and lower current text after the equation in the Output Stage section ........................................... 14
• Added the C2 not required for most applications text after the second equation in the Output Stage section.................... 14
• Changed I
O
to I
SINK
in condition statement of FET overload fault condition in Reverse Supply Protection section............. 15
1 2 3
V
CC
GND
OUT
3
2
GND
OUT
1
V
CC
4
DRV5013
ZHCSCA7K –MARCH 2014–REVISED AUGUST 2019
www.ti.com.cn
Copyright © 2014–2019, Texas Instruments Incorporated
5 Pin Configuration and Functions
For additional configuration information, see
器件标记
and
机械、封装和可订购信息
.
DBZ Package
3-Pin SOT-23
Top View
LPG and LPE Packages
3-Pin TO-92
Top View
Pin Functions
PIN
TYPE DESCRIPTION
NAME DBZ LPG, LPE
GND 3 2 Ground Ground pin
OUT 2 3 Output Hall sensor open-drain output. The open drain requires a resistor pullup.
V
CC
1 1 Power
2.5 V to 38 V power supply. Bypass this pin to the GND pin with a 0.01-µF (minimum)
ceramic capacitor rated for V
CC
.
5
DRV5013
www.ti.com.cn
ZHCSCA7K –MARCH 2014–REVISED AUGUST 2019
Copyright © 2014–2019, Texas Instruments Incorporated
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings
only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended
Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2) Specified by design. Only tested to –20 V.
6 Specifications
6.1 Absolute Maximum Ratings
over operating free-air temperature range (unless otherwise noted)
(1)
MIN MAX UNIT
Power supply voltage
V
CC
–22
(2)
40 V
Voltage ramp rate (V
CC
), V
CC
< 5 V Unlimited
V/µs
Voltage ramp rate (V
CC
), V
CC
> 5 V 0 2
Output pin voltage –0.5 40 V
Output pin reverse current during reverse supply condition 0 100 mA
Magnetic flux density, B
MAX
Unlimited
Operating junction temperature, T
J
Q, see 图 24 –40 150
°C
E, see 图 24 –40 175
Storage temperature, T
stg
–65 150 °C
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.
6.2 ESD Ratings
VALUE UNIT
V
(ESD)
Electrostatic
discharge
Human body model (HBM), per ANSI/ESDA/JEDEC JS-001, all pins
(1)
±2500
V
Charged device model (CDM), per JEDEC specification JESD22-C101, all pins
(2)
±500
(1) Power dissipation and thermal limits must be observed.
6.3 Recommended Operating Conditions
over operating free-air temperature range (unless otherwise noted)
MIN MAX UNIT
V
CC
Power supply voltage 2.5 38 V
V
O
Output pin voltage (OUT) 0 38 V
I
SINK
Output pin current sink (OUT)
(1)
0 30 mA
T
A
Operating ambient
temperature
Q, see 图 24 –40 125
°C
E, see 图 24 –40 150
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application
report.
6.4 Thermal Information
THERMAL METRIC
(1)
DRV5013
UNITDBZ (SOT-23) LPG, LPE (TO-92)
3 PINS 3 PINS
R
θJA
Junction-to-ambient thermal resistance 333.2 180 °C/W
R
θJC(top)
Junction-to-case (top) thermal resistance 99.9 98.6 °C/W
R
θJB
Junction-to-board thermal resistance 66.9 154.9 °C/W
ψ
JT
Junction-to-top characterization parameter 4.9 40 °C/W
ψ
JB
Junction-to-board characterization parameter 65.2 154.9 °C/W
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