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TI-DRV5023.pdf
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TI-DRV5023.pdf
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OUT
B
OP
B
RP
B
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B
hys
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An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.
English Data Sheet: SLIS151
DRV5023
ZHCSEF3G –MAY 2014–REVISED SEPTEMBER 2016
DRV5023 数数字字开开关关霍霍尔尔效效应应传传感感器器
1
1 特特性性
1
• 数字单极性开关霍尔传感器
• 出色的温度稳定性
– 温度范围内的灵敏度为 ±10%
• 多个灵敏度选项 (B
OP
/B
RP
):
– 3.5/2mT(FA,请参见图 24)
– 6.9/3.2mT(AJ,请参见 图 24)
– 14.5/6mT(BI,请参见 图 24)
• 支持宽电压范围
– 2.5V 至 38V
– 无需外部稳压器
• 宽运行电压范围
– T
A
= -40 至 125°C(Q,请见 图 24)
• 开漏输出(30mA 灌电流)
• 35µs 快速上电时间
• 小型封装尺寸
– 表面贴装 3 引脚小外形尺寸晶体管 (SOT)-23
(DBZ)
– 2.92mm × 2.37mm
– 插入式 3 引脚 TO-92 (LPG)
– 4.00mm × 3.15mm
• 保保护护 特特性性
– 反向电源保护(高达 -22V)
– 支持高达 40V 抛负载
– 输出短路保护
– 输出电流限制
2 应应用用
• 对接检测
• 门开关检测
• 接近感测
• 阀定位
• 脉冲计数
3 说说明明
DRV5023 器件是一款斩波稳定霍尔效应传感器,能够
在整个温度范围内提供具有出色灵敏度稳定性和集成保
护特性的磁场感测 解决方案。
当应用的磁通量密度超过 B
OP
阈值时,DRV5023 开漏
输出变为低电平。输出将保持低电平,直到磁通量密度
降至 B
RP
以下之后变为高阻抗。输出灌电流能力为
30mA。反向极性保护高达 -22V 的宽工作电压范围
(2.5 至 38V)使得此器件广泛适用于各种工业 信
号。
该器件提供针对反向电源情况、负载突降以及输出短路
或过流故障的内部保护功能。
器器件件信信息息
(1)
器器件件型型号号 封封装装 封封装装尺尺寸寸((标标称称值值))
DRV5023
SOT-23 (3) 2.92mm × 1.30mm
TO-92 (3) 4.00mm × 3.15mm
(1) 要了解所有可用封装,请见数据表末尾的可订购产品附录。
输输出出状状态态
SOT-23 TO-92
2
DRV5023
ZHCSEF3G –MAY 2014–REVISED SEPTEMBER 2016
www.ti.com.cn
版权 © 2014–2016, Texas Instruments Incorporated
目目录录
1 特特性性.......................................................................... 1
2 应应用用.......................................................................... 1
3 说说明明.......................................................................... 1
4 修修订订历历史史记记录录 ........................................................... 2
5 Pin Configuration and Functions......................... 4
6 Specifications......................................................... 5
6.1 Absolute Maximum Ratings ...................................... 5
6.2 ESD Ratings.............................................................. 5
6.3 Recommended Operating Conditions....................... 5
6.4 Thermal Information.................................................. 5
6.5 Electrical Characteristics........................................... 6
6.6 Switching Characteristics.......................................... 6
6.7 Magnetic Characteristics........................................... 6
6.8 Typical Characteristics.............................................. 7
7 Detailed Description.............................................. 9
7.1 Overview ................................................................... 9
7.2 Functional Block Diagram ......................................... 9
7.3 Feature Description................................................. 10
7.4 Device Functional Modes........................................ 15
8 Application and Implementation ........................ 16
8.1 Application Information............................................ 16
8.2 Typical Applications ................................................ 16
9 Power Supply Recommendations...................... 18
10 Layout................................................................... 19
10.1 Layout Guidelines ................................................. 19
10.2 Layout Example .................................................... 19
11 器器件件和和文文档档支支持持 ..................................................... 20
11.1 器件支持................................................................ 20
11.2 接收文档更新通知 ................................................. 21
11.3 社区资源................................................................ 21
11.4 商标 ....................................................................... 21
11.5 静电放电警告......................................................... 21
11.6 Glossary................................................................ 21
12 机机械械、、封封装装和和可可订订购购信信息息....................................... 21
4 修修订订历历史史记记录录
注:之前版本的页码可能与当前版本有所不同。
Changes from Revision F (May 2016) to Revision G Page
• Changed the power-on time for the FA version in the Electrical Characteristics table .......................................................... 6
• Added the Layout section .................................................................................................................................................... 19
• 已添加
接收文档更新通知
部分 .............................................................................................................................................. 21
Changes from Revision E (February 2016) to Revision F Page
• Revised preliminary limits for the FA version ......................................................................................................................... 6
Changes from Revision D (December 2015) to Revision E Page
• 已添加 FA 器件选项 ................................................................................................................................................................ 1
• Added the typical bandwidth value to the Magnetic Characteristics table ............................................................................ 6
Changes from Revision C (May 2015) to Revision D Page
• 已更正 SOT-23 封装体尺寸并将 SIP 封装名称更正为 TO-92 ................................................................................................ 1
• Added B
MAX
to Absolute Maximum Ratings ........................................................................................................................... 5
• Removed table note from junction temperature .................................................................................................................... 5
• 已更新封装卷带选项 M 和空白.............................................................................................................................................. 20
• 已添加
社区资源
.................................................................................................................................................................. 21
Changes from Revision B (September 2014) to Revision C Page
• 已将器件状态更新为量产数据 ................................................................................................................................................ 1
3
DRV5023
www.ti.com.cn
ZHCSEF3G –MAY 2014–REVISED SEPTEMBER 2016
Copyright © 2014–2016, Texas Instruments Incorporated
Changes from Revision A (August 2014) to Revision B Page
• 已将“高灵敏度选项”更新为 +6.9/+3.2mT (AJ) 和 +14.5/+6mT (BI)......................................................................................... 1
• Added typical rise and fall time and removed maximum value ............................................................................................. 6
• Updated the device values and typical values in Magnetic Characteristics .......................................................................... 6
• Updated all Typical Characteristics graphs ........................................................................................................................... 7
• Updated Equation 4 ............................................................................................................................................................. 17
• 已更新 图 24 ........................................................................................................................................................................ 20
Changes from Original (May 2014) to Revision A Page
• 已更改 高灵敏度选项“+6.9/+2.3mT (AJ)”至“+6.9/+3.3mT (AJ)”.............................................................................................. 1
• Changed the maximum T
J
value from 175°C to 150°C ......................................................................................................... 5
• Changed MIN value for I
OCP
from 20 to 15 ............................................................................................................................ 6
• Changed Max value for I
OCP
from 40 to 45 ............................................................................................................................ 6
• Updated Magnetic Characteristics table. ............................................................................................................................... 6
1 2 3
V
CC
GND
OUT
3
2
GND
OUT
1
V
CC
4
DRV5023
ZHCSEF3G –MAY 2014–REVISED SEPTEMBER 2016
www.ti.com.cn
Copyright © 2014–2016, Texas Instruments Incorporated
5 Pin Configuration and Functions
For additional configuration information, see
器件标记
and
机械、封装和可订购信息
.
DBZ Package
3-Pin SOT-23
Top View
LPG Package
3-Pin TO-92
Top View
Pin Functions
PIN
TYPE DESCRIPTION
NAME DBZ LPG
GND 3 2 GND Ground pin
OUT 2 3 Output Hall sensor open-drain output. The open drain requires a resistor pullup.
V
CC
1 1 Power
2.5 to 38 V power supply. Bypass this pin to the GND pin with a 0.01-μF (minimum)
ceramic capacitor rated for V
CC
.
5
DRV5023
www.ti.com.cn
ZHCSEF3G –MAY 2014–REVISED SEPTEMBER 2016
Copyright © 2014–2016, Texas Instruments Incorporated
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings
only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended
Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2) Ensured by design. Only tested to –20 V.
6 Specifications
6.1 Absolute Maximum Ratings
over operating free-air temperature range (unless otherwise noted)
(1)
MIN MAX UNIT
Power supply voltage
V
CC
–22
(2)
40 V
Voltage ramp rate (V
CC
), V
CC
< 5 V Unlimited
V/µs
Voltage ramp rate (V
CC
), V
CC
> 5 V 0 2
Output pin voltage –0.5 40 V
Output pin reverse current during reverse supply condition 0 100 mA
Magnetic flux density, B
MAX
Unlimited
Operating junction temperature, T
J
–40 150 °C
Storage temperature, T
stg
–65 150 °C
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.
6.2 ESD Ratings
VALUE UNIT
V
(ESD)
Electrostatic
discharge
Human body model (HBM), per ANSI/ESDA/JEDEC JS-001, all pins
(1)
±2500
V
Charged device model (CDM), per JEDEC specification JESD22-C101, all pins
(2)
±500
(1) Power dissipation and thermal limits must be observed.
6.3 Recommended Operating Conditions
over operating free-air temperature range (unless otherwise noted)
MIN MAX UNIT
V
CC
Power supply voltage 2.5 38 V
V
O
Output pin voltage (OUT) 0 38 V
I
SINK
Output pin current sink (OUT)
(1)
0 30 mA
T
A
Operating ambient temperature –40 125 °C
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application
report.
6.4 Thermal Information
THERMAL METRIC
(1)
DRV5023
UNITDBZ (SOT-23) LPG (TO-92)
3 PINS 3 PINS
R
θJA
Junction-to-ambient thermal resistance 333.2 180 °C/W
R
θJC(top)
Junction-to-case (top) thermal resistance 99.9 98.6 °C/W
R
θJB
Junction-to-board thermal resistance 66.9 154.9 °C/W
ψ
JT
Junction-to-top characterization parameter 4.9 40 °C/W
ψ
JB
Junction-to-board characterization parameter 65.2 154.9 °C/W
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