TI-DRV411.pdf资源-CSDN文库

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VDD

Rotation

Switches

Demod

and

Filtering

Gain, Compensation,

Excitation Control

Class AB

Pre-Driver

Voltage Reference

2.5V, 1.65V,

Ratiometric

Overrange

RSEL2RSEL1OR

ERROR

GSEL2GSEL1

Linear

H-Bridge

Driver

Differential

Amplifier

VOUT

REFIN

REFOUT

IAIN1

SHUNT

DRV411

HALL1

HALL4

IAIN2

GND

Magnetic Core

Hall

Sensor

ICOMP1

ICOMP2

Primary Winding

Compensation

Winding

PRIM

Sensor

Excitation

DRV411

www.ti.com.cn

ZHCSBD8A –AUGUST 2013–REVISED AUGUST 2013

用用于于闭闭环环磁磁流流传传感感器器的的传传感感器器信信号号调调节节集集成成电电路路 (IC)

查查询询样样品品: DRV411

特特性性

说说明明

• 针针对对对对称称霍霍尔尔元元件件进进行行了了优优化化

DRV411 被设计成针对闭环电流传感器模块内的使用

（（例例如如，，AKM HW-322，，HW-302，，或或相相似似元元件件））

来调节 InSb 霍尔元件。 DRV411 为霍尔元件提供精

• 旋旋转转电电流流霍霍尔尔传传感感器器激激发发

密激发电路，以有效消除霍尔元件的偏移和偏移-漂

– 霍霍尔尔传传感感器器偏偏移移和和漂漂移移的的消消除除

移。这个器件还提供一个 250mA H 桥来驱动传感器

补偿线圈，以及一个精密差分放大器来生成输出信号。

– 1/f 噪噪声声的的消消除除

相对于传统单端驱动方法，H 桥 250mA 的驱动能力几

• 扩扩展展电电流流测测量量范范围围

乎将电流测量范围加倍。

– H 桥桥驱驱动动能能力力：：250mA

• 精精密密差差分分放放大大器器：：

霍尔传感器前端电路和差分放大器采用已获专利的偏移

– 偏偏移移和和漂漂移移：：100µV（（最最大大值值）），，2µV/°C（（最最

消除技术。这些技术，与高精度电压基准一起，大大

大大值值））

改进了整个电流传感器模块的精度。可通过引脚选择

– 系系统统带带宽宽：：200kHz

输出电压以在由 5V 电源供电时支持一个 2.5V 输出，

• 精精密密基基准准：：

以及用于 3.3V 传感器的 1.65V 输出。

– 精精度度：：0.2%（（最最大大值值））

为了实现最佳散热，DRV411 采用具有 PowerPad 的

– 漂漂移移：：50ppm/°C（（最最大大值值））

耐热增强型 4mm x 4mm QFN 和 TSSOP-20 封装。

– 可可针针对对 2.5V，，1.65V 和和比比例例模模式式选选择择引引脚脚

DRV411 可在 -40°C 至 +125°C 的完全扩展工业用温

• 超超限限和和错错误误标标志志

度范围内运行。

• 电电源源：：2.7V 至至 5.5V

• 封封装装：：4mm x 4mm 四四方方扁扁平平无无引引线线封封装装 (QFN)

和和薄薄型型小小尺尺寸寸封封装装 (TSSOP)-20 PowerPAD™

• 温温度度范范围围：：-40°C 至至 +125°C

应应用用范范围围

• 闭闭环环电电流流传传感感器器模模块块

• 直直流流和和交交流流电电流流测测量量

方方框框图图

Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of

Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.

2PowerPAD is a trademark of Texas Instruments.

3All other trademarks are the property of their respective owners.

PRODUCTION DATA information is current as of publication date.

Products conform to specifications per the terms of the Texas

Instruments standard warranty. Production processing does not English Data Sheet: SBOS693

necessarily include testing of all parameters.

DRV411

ZHCSBD8A –AUGUST 2013–REVISED AUGUST 2013

www.ti.com.cn

This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with

appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.

ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more

susceptible to damage because very small parametric changes could cause the device not to meet its published specifications.

PACKAGE INFORMATION

(1)

(1) For the most current package and ordering information, see the Package Option Addendum located at the end of this data sheet, or visit

the device product folder at www.ti.com.

ABSOLUTE MAXIMUM RATINGS

(1)

Over operating free-air temperature range (unless otherwise noted).

VALUE

MIN MAX UNIT

Supply voltage (VDD to GND) +7 V

Input voltage

(2)

GND – 0.5 VDD + 0.5 V

Differential amplifier inputs GND – 6 VDD + 6 V

Input current to input terminals

(3)

–25 +25 mA

ICOMP short circuit

(4)

300 mA

Junction temperature, T

max –50 +150 °C

Storage temperature range, T

stg

–65 +150 °C

OR, ERROR pins –500 +500 V

Human body model (HBM)

Electrostatic

JEDEC standard 22, test method A114-C.01

All other pins –2000 +2000 V

discharge (ESD)

Charged device model (CDM)

ratings

–1000 +1000 V

JEDEC standard 22, test method C101

(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings

only, and functional operation of the device at these or any other conditions beyond those indicated is not implied. Exposure to absolute-

maximum rated conditions for extended periods may affect device reliability.

(2) Input terminals are diode-clamped to the power-supply rails. Input signals that can swing more than 0.5 V beyond the supply rails must

be current limited, except for the differential amplifier input pins.

(3) These inputs are not internally protected against overvoltage. The differential amplifier input pins must be limited to 5 mA (max) or ±1.5

V (max).

(4) Power-limited; observe maximum junction temperature.

THERMAL INFORMATION

DRV411

THERMAL METRIC

(1)

PWP (TSSOP) RGP (QFN) UNITS

20 PINS 20 PINS

Junction-to-ambient thermal resistance 37.2 33.8

JCtop

Junction-to-case (top) thermal resistance 24.3 34.6

Junction-to-board thermal resistance 19.8 11.1

°C/W

Junction-to-top characterization parameter 0.7 0.4

Junction-to-board characterization parameter 19.6 11.2

JCbot

Junction-to-case (bottom) thermal resistance 2.0 2.4

(1) 有关传统和全新热度量的更多信息，请参阅 IC

封装热度量

应用报告（文献号：SPRA953）。

DRV411

www.ti.com.cn

ZHCSBD8A –AUGUST 2013–REVISED AUGUST 2013

ELECTRICAL CHARACTERISTICS

At T

= +25°C, V

= +2.7 V to +5.5 V, and zero output current I

COMP

, unless otherwise noted.

DRV411

PARAMETER TEST CONDITIONS MIN TYP MAX UNIT

HALL ELEMENT EXCITATION / AMPLIFICATION

= –40°C to +125°C, GSEL [00,01,10] 0.7 0.8 0.95 V

Hall sensor excitation voltage

= –40°C to +125°C, GSEL [1,1] 0.6 0.74 0.95 V

Hall sensor excitation current T

= –40°C to +125°C 10 mA

spin

Excitation switching frequency 1 MHz

GSEL [0,0]

(1)

, f

Zero

= 3.8 kHz 250 V/V

AOL

Front-end open-loop flatband gain GSEL [0,1], f

Zero

= 7.2 kHz 250 V/V

GSEL [1,0], f

Zero

= 3.8 kHz 1000 V/V

= –40°C to +125°C,

AOL Front-end open-loop gain 94 120 dB

GSEL [00,01,10,11]

No Hall sensor, GSEL [00, 01, 10] 20 100 µV

OS_FE

Front-end voltage offset

GSEL [1,1] 5 12 mV

= –40°C to +125°C, no Hall sensor,

0.2 µV/°C

GSEL [00,01,10]

OS_FE

/dT Front-end voltage offset drift

= –40°C to +125°C, GSEL [1,1] 5 µV/°C

GBWP Gain-bandwidth product GSEL [1,1] 14 MHz

CMRR Common-mode-rejection ratio GSEL [1,1], V

= 0 V to VDD – 1.8 V 300 µV/V

Error comparator threshold 50 mV

DIFFERENTIAL AMPLIFIER

Input offset voltage, RTO

(2) (3)

IN1

= V

IN2

= V

REFIN

±0.01 ±0.1 mV

/dT Input offset voltage drift, RTO T

= –40°C to +125°C ±0.4 ±2 µV/°C

CMRR vs common-mode voltage, RTO V

= −1 V to V

+ 1 V, V

REF

= V

/ 2 ±50 ±250 µV/V

PSRR vs power-supply, RTO V

= +2.7 V to +5.5 V, V

= V

REFIN

±4 ±50 µV/V

Common-mode input range –1 V

+ 1 V

Differential impedance 16.5 20 23.5 kΩ

Common-mode impedance 40 50 60 kΩ

External reference input impedance 40 50 60 kΩ

G Gain, V

OUT

IN_DIFF

= –40°C to +125°C 4 V/V

ERR

Gain error ±0.02% ±0.3%

Gain error drift T

= –40°C to +125°C ±1 ±5 ppm/°C

Linearity error R

= 1 kΩ 12 ppm

Voltage output swing from negative rail

(3)

I = +2.5 mA, V

= 5 V, comparator trip

48 85 mV

(OR pin trip level) level

Voltage output swing from positive rail

(3)

I = –2.5 mA, V

= 5 V, comparator trip

– 85 V

– 48 mV

(OR pin trip level) level

OUT

connected to GND –18 mA

Short-circuit current

(3)

OUT

connected to V

20 mA

Signal overrange indication delay

= 1-V step, see note

(3)

2.5 to 3.5 µs

(OR pin)

(3)

–3dB

Bandwidth

(3)

2 MHz

SR Slew rate 6.5 V/µs

Settling time large-signal

(3)

ΔV = ± 2 V to 1%, no external filter 0.9 µs

Settling time

(3)

ΔV = ± 0.4 V to 0.01% 8 µs

Output voltage noise density, RTO

(3)

f = 1 kHz, compensation loop disabled 170 nV/√Hz

(1) Note that the numbers in the brackets correspond to the GSEL number and its value. For example, in this case, GSEL [0,0] means that

GSEL1 = 0 and GSEL2 = 0.

(2) Parameter value referred to output (RTO).

(3) See Typical Characteristic curves.

DRV411

ZHCSBD8A –AUGUST 2013–REVISED AUGUST 2013

www.ti.com.cn

ELECTRICAL CHARACTERISTICS (continued)

At T

= +25°C, V

= +2.7 V to +5.5 V, and zero output current I

COMP

, unless otherwise noted.

DRV411

PARAMETER TEST CONDITIONS MIN TYP MAX UNIT

COMPENSATION COIL DRIVER, H-BRIDGE

= –40°C to +125°C,

210 250 mA

ICOMP1

– V

ICOMP2

= 4.2 V

, V

= 5 V

Peak current

= –40°C to +125°C,

125 150 mA

ICOMP1

– V

ICOMP2

= 2.5 V

, V

= 3.3 V

20-Ω load, V

= 5 V 4.2 V

Voltage swing

20-Ω load, V

= 3.3 V 2.5 V

Output common-mode V

/ 2 V

VOLTAGE REFERENCE

REFSEL [0,0]

(5)

, no load 2.495 2.5 2.505 V

REF

Reference voltage

(4)

REFSEL [1,0], no load 1.647 1.65 1.653 V

REFSEL [1,1], no load 49.6 50 50.4 % of V

Reference voltage drift

(4)

= –40°C to +125°C, REFSEL [00,10] ±5 ±50 ppm/°C

Voltage divider gain error drift T

= –40°C to +125°C, REFSEL [1,1] ±5 ±50 ppm/°C

PSRR Power-supply rejection ratio

(4)

REFSEL [00,10] ±15 ±200 µV/V

Load to GND or VDD,

Load regulation 0.15 0.35 mV/mA

ΔI

LOAD

= 0 mA to 5 mA

REFOUT connected to VDD 20 mA

Short-circuit current

REFOUT connected to GND –18 mA

DIGITAL INPUT/OUTPUT

Logic Inputs (GSEL, REFSEL pins) CMOS-type levels

Input leakage current 0.01 µA

High-level input voltage 0.7 × V

+ 0.3 V

Low-level input voltage –0.3 0.3 × V

Logic Outputs (ERROR, OR pins)

High-level output voltage 4-mA sink 0.3 V

Low-level output voltage See

(6)

POWER SUPPLY

Specified voltage 2.7 5.5 V

= –40°C to +125°C, I

COMP

= 0 mA, no

Quiescent current 6 mA

excitation

RST

Power-on reset threshold T

= –40°C to +125°C 2.4 V

TEMPERATURE

Specified range –40 +125 °C

Operating range –50 +150 °C

(4) See Typical Characteristic curves.

(5) Note that the numbers in the brackets correspond to the REFSEL number and its value. For example, in this case, REFSEL [0,0] means

that REFSEL1 = 0 and REFSEL2 = 0.

(6) OR and ERROR are open-drain outputs. No internal pull-up resistor. Output voltage depends on the external pull up resistor that is

used.

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