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TI-DS64EV100.pdf
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TI-DS64EV100.pdf
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ASIC/FPGA
High Speed
I/O
Backplane/Cable
Sub-system
Switch Fabric Card
Line Card
OUT IN
DS64EV100
OUT IN
Tx
Tx
Rx
Rx
ASIC/FPGA
High Speed
I/O
DS64EV100
DS64EV100
www.ti.com
SNLS232E –OCTOBER 2006–REVISED FEBRUARY 2013
DS64EV100 Programmable Single Equalizer
Check for Samples: DS64EV100
1
FEATURES
DESCRIPTION
The DS64EV100 programmable equalizer provides
2
• Equalizes up to 24 dB loss at 10 Gbps
compensation for transmission medium losses and
• Equalizes up to 22 dB loss at 6.4 Gbps
reduces the medium-induced deterministic jitter for
• 8 levels of programmable equalization
NRZ data channel. The DS64EV100 is optimized for
operation up to 10 Gbps for both cables and FR4
• Operates up to 10 Gbps with 30” FR4 traces
traces. The equalizer channel has eight levels of
• Operates up to 6.4 Gbps with 40” FR4 traces
input equalization that can be programmed by three
• 0.175 UI residual deterministic jitter at 6.4
control pins.
Gbps with 40” FR4 traces
The equalizer supports both AC and DC-coupled data
• Single 2.5V or 3.3V power supply
paths for long run length data patterns such as
• Supports AC or DC-Coupling with wide input
PRBS-31, and balanced codes such as 8b/10b. The
device uses differential current-mode logic (CML)
common-mode
inputs and outputs. The DS64EV100 is available in a
• Low power consumption: 100 mW Typ at 2.5V
3 mm x 4 mm 14-pin leadless WSON package.
• Small 3 mm x 4 mm 14-pin WSON package
Power is supplied from either a 2.5V or 3.3V supply.
• > 8 kV HBM ESD Rating
• -40 to 85°C operating temperature range
Simplified Application Diagram
1
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
2All trademarks are the property of their respective owners.
PRODUCTION DATA information is current as of publication date.
Copyright © 2006–2013, Texas Instruments Incorporated
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
1
2
3
4
5
6
7
14
13
12
11
10
9
8
IN+
IN-
VDD
GND
GND
BST_1
NC BST_2
GND
OUT_+
OUT_-
GND
GND
BST_0
DS64EV100
TOP VIEW
DAP = GND
DS64EV100
SNLS232E –OCTOBER 2006–REVISED FEBRUARY 2013
www.ti.com
Pin Diagram
Figure 1. 14-Pin WSON Package
(3 mm x 4 mm x 0.8 mm, 0.5 mm pitch)
See Package Number NHK0014A
Table 1. Pin Descriptions
I/O,
Pin Name Pin # Description
Type
HIGH SPEED DIFFERENTIAL I/O
IN+ 3 I, CML Inverting and non-inverting CML differential inputs to the equalizer. An on-chip 100Ω terminating
IN− 4 resistor is connected between IN+ and IN-. Refer to Figure 4.
OUT+ 12 O, CML Inverting and non-inverting CML differential outputs from the equalizer. An on-chip 50Ω
OUT− 11 terminating resistor connects OUT+ to V
DD
and OUT- to V
DD
.
EQUALIZATION CONTROL
BST_2 14 I, CMOS BST_2, BST_1, and BST_0 select the equalizer strength. BST_2 is internally pulled high. BST_1
BST_1 7 and BST_0 are internally pulled low.
BST_0 8
POWER
V
DD
5 I, Power V
DD
= 2.5V ±5% or 3.3V ±10%. V
DD
pins should be tied to V
DD
plane through low inductance
path. A 0.01μF bypass capacitor should be connected between each V
DD
pin to GND planes.
GND 2, 6, 9, 10, I, Power Ground reference. GND should be tied to a solid ground plane through a low impedance path.
13
DAP PAD I, Power Ground reference. The exposed pad at the center of the package must be connected to ground
plane of the board.
OTHER
NC 1 Reserved. Do not connect.
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
2 Submit Documentation Feedback Copyright © 2006–2013, Texas Instruments Incorporated
Product Folder Links: DS64EV100
DS64EV100
www.ti.com
SNLS232E –OCTOBER 2006–REVISED FEBRUARY 2013
Absolute Maximum Ratings
(1)(2)
Supply Voltage (V
DD
) −0.5V to +4V
CMOS Input Voltage −0.5V to +4.0V
CMOS Output Voltage −0.5V to +4.0V
CML Input/Output Voltage −0.5V to +4.0V
Junction Temperature +150°C
Storage Temperature −65°C to +150°C
Lead Temperature
Soldering, 4 sec +260°C
ESD Rating
HBM, 1.5 kΩ, 100 pF > 8 kV
EIAJ, 0Ω, 200 pF > 250 V
Thermal Resistance, θ
JA
,
No Airflow 40 °C/W
(1) “Absolute Maximum Ratings” indicate limits beyond which damage to the device may occur, including inoperability and degradation of
device reliability and/or performance. Functional operation of the device and/or non-degradation at the Absolute Maximum Ratings or
other conditions beyond those indicated in the Recommended Operating Conditions is not implied. The Recommended Operating
Conditions indicate conditions at which the device is functional and the device should not be operated beyond such conditions. Absolute
Maximum Numbers are guaranteed for a junction temperature range of –40°C to +125°C. Models are validated to Maximum Operating
Voltages only.
(2) If Military/Aerospace specified devices are required, please contact the Texas Instruments Sales Office / Distributors for
availability and specifications.
Recommended Operating Conditions
MIN TYP MAX UNIT
Supply Voltage
(1)
V
DD2.5
to GND 2.375 2.5 2.625 V
V
DD3.3
to GND 3.0 3.3 3.6 V
Ambient Temperature −40 25 +85 °C
(1) The V
DD2.5
is V
DD
= 2.5V ± 5% and V
DD3.3
is V
DD
= 3.3V ± 10%.
Electrical Characteristics
Over recommended operating supply and temperature ranges unless other specified.
(1) (2)
PARAMETER TEST CONDITIONS MIN TYP
(1)
MAX UNIT
POWER
V
DD3.3
140 200 mW
Power Supply
P
Consumption
V
DD2.5
100 150 mW
50 Hz – 100 Hz 100 mV
P-P
Supply Noise Tolerance
N 100 Hz – 10 MHz 40 mV
P-P
(3)
10 MHz – 1.6 GHz 10 mV
P-P
LVTTL DC SPECIFICATIONS
V
DD2.
V
DD2.5
1.6 V
5
V
IH
High Level Input Voltage
V
DD3.
V
IL
2.0 V
3
V
IL
Low Level Input Voltage −0.3 0.8 V
I
OH
= –3 mA, V
DD3.3
2.4 V
V
OH
High Level Input Voltage
I
IN
2.0 V
V
OL
Low Level Input Voltage I
OL
= 3 mA 0.4 V
(1) Typical values represent most likely parametric norms at V
DD
= 3.3V or 2.5V, T
A
= 25°C., and at the Recommended Operation
Conditions at the time of product characterization and are not guaranteed.
(2) The Electrical Characteristics tables list guaranteed specifications under the listed Recommended Operating Conditions except as
otherwise modified or specified by the Electrical Characteristics Conditions and/or Notes. Typical specifications are estimations only and
are not guaranteed.
(3) Allowed supply noise (mV
P-P
sine wave) under typical conditions.
Copyright © 2006–2013, Texas Instruments Incorporated Submit Documentation Feedback 3
Product Folder Links: DS64EV100
DS64EV100
SNLS232E –OCTOBER 2006–REVISED FEBRUARY 2013
www.ti.com
Electrical Characteristics (continued)
Over recommended operating supply and temperature ranges unless other specified.
(1) (2)
PARAMETER TEST CONDITIONS MIN TYP
(1)
MAX UNIT
POWER
V
IN
= V
DD
+1.8 +15 µA
I
IN
Input Current
V
IN
= GND −15 0 µA
Input Leakage Current V
IN
= GND, with internal pull-down resistors +95 µA
I
IN-P
with Internal Pull-
V
IN
= GND, with internal pull-up resistors –20 µA
Down/Up Resistors
CML RECEIVER INPUTS (IN+, IN−)
AC-Coupled or DC-Coupled Requirement, Differential
Source Transmit Launch
V
TX
measurement at point A. 400 1600 mV
P-P
Signal Level (IN diff)
Figure 1
Differential measurement at point B .
V
INTRE
Input Threshold Voltage 120 mV
P-P
Figure 1
Supply Voltage of
V
DDTX
DC-Coupled Requirement 1.6 V
DD
V
Transmitter to EQ
DC-Coupled Requirement Differential measurement at
Input Common-Mode V
DDT
V
ICMDC
point A. V
DDTX
-0.8 V
Voltage
X
-0.2
Figure 1
(4)
Differential Input Return
R
LI
100 MHz – 3.2 GHz, with fixture’s effect de-embedded 10 dB
Loss
R
IN
Input Resistance Differential Across IN+ and IN-. Figure 4 85 100 115 Ω
CML OUTPUTS (OUT+, OUT−)
Differential measurement with OUT+ and OUT-
Output Differential
V
OD
terminated by 50Ω to GND, AC-Coupled 550 620 725 mV
P-P
Voltage Level (OUT diff)
Figure 2
Single-ended measurement DC-Coupled with 50Ω
Output Common-Mode V
DD
-
V
OCM
terminations V
DD
-0.2 V
Voltage 0.1
(5)
20% to 80% of differential output voltage, measured
within 1” from output pins.
t
R
, t
F
Transition Time 20 60 ps
Figure 2
(5)
R
O
Output Resistance Single-ended to V
DD
42 50 58 Ω
Differential Output 100 MHz – 1.6 GHz, with fixture’s effect de-
R
LO
10 dB
Return Loss embedded. IN+ = static high.
Differential Low to High Propagation delay measurement at 50% V
OD
between
t
PLHD
240 ps
Propagation Delay input to output, 100 Mbps
Figure 3
(5)
Differential High to Low
t
PHLD
240 ps
Propagation Delay
EQUALIZATION
30” of 6 mil microstrip FR4, EQ Setting 0x06, PRBS-7
Residual Deterministic
DJ1 (2
7
-1) pattern 0.20 UI
P-P
Jitter at 10 Gbps
(6)(7)
40” of 6 mil microstrip FR4, EQ Setting 0x06, PRBS-7
Residual Deterministic
DJ2 (2
7
-1) pattern 0.17 0.26 UI
P-P
Jitter at 6.4 Gbps
(6)(7)
40” of 6 mil microstrip FR4, EQ Setting 0x07, PRBS-7
Residual Deterministic
DJ3 (2
7
-1) pattern 0.12 0.20 UI
P-P
Jitter at 5 Gbps
(6)(7)
40” of 6 mil microstrip FR4, EQ Setting 0x07, PRBS-7
Residual Deterministic
DJ4 (2
7
-1) pattern 0.10 0.16 UI
P-P
Jitter at 2.5 Gbps
(6)(7)
(4) Measured with clock-like {11111 00000} pattern.
(5) Measured with clock-like {11111 00000} pattern.
(6) Specification is guaranteed by characterization at optimal boost setting and is not tested in production.
(7) Deterministic jitter is measured at the differential outputs (point C of Figure 1), minus the deterministic jitter before the test channel (point
A of Figure 1). Random jitter is removed through the use of averaging or similar means.
4 Submit Documentation Feedback Copyright © 2006–2013, Texas Instruments Incorporated
Product Folder Links: DS64EV100
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