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TI-ISO7821LL.pdf
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TI-ISO7821LL.pdf
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Isolation
Capacitor
INx+
INx±
OUTx+
OUTx±
LVDS TX
LVDS RX
V
CCI
GNDI
V
CCO
GNDO
ENx
Copyright © 2016, Texas Instruments Incorporated
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An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.
English Data Sheet: SLLSET8
ISO7820LL
,
ISO7821LL
ZHCSFT4A –MARCH 2016–REVISED AUGUST 2016
ISO782xLL 高高性性能能 8000 V
PK
增增强强型型隔隔离离式式双双 LVDS 缓缓冲冲器器
1
1 特特性性
1
• 符合 TIA/EIA-644-A LVDS 标准
• 信号传输速率:高达 100Mbps
• 宽电源电压范围:2.25V 至 5.5V
• 宽环境温度范围:-55°C 至 +125°C
• 低功耗,100Mbps 时每通道的电流:
– 典型值 9.3mA (ISO7820LL)
– 典型值 9.5mA (ISO7821LL)
• 低传播延迟:17ns(典型值)
• 行业领先的 CMTI(最小值):±100kV/μs
• 优异的电磁兼容性 (EMC)
• 系统级静电放电 (ESD)、瞬态放电 (EFT) 以及抗浪
涌保护
• 低辐射
• 隔离栅寿命:> 40 年
• 提供宽体和超宽体 SOIC-16 封装
• 可承受的隔离浪涌电压高达 12800 V
PK
• 安全相关认证:
– 符合 DIN V VDE V 0884-10 (VDE V 0884-
10):2006-12 标准的 8000 V
PK
– 符合 UL 1577 标准且长达 1 分钟的 5700 V
RMS
隔离
– CSA 组件验收通知 5A,IEC 60950-1 和 IEC
60601-1 终端设备标准
– 符合 EN 61010-1 和 EN 60950-1 标准的 TUV
认证
– GB4943.1-2011 CQC 认证
– 已通过所有认证
2 应应用用
• 电机控制
• 测试和测量
• 工业自动化
• 医疗设备
• 通信系统
3 说说明明
ISO782xLL 系列器件是高性能隔离式双路 LVDS 缓冲
器,隔离电压高达 8000V
PK
。在隔离 LVDS 总线信号
时,该器件可提供高电磁抗扰度,辐射较低,并且具有
低功耗特性。每条隔离通道的 LVDS 接收和发送缓冲
器均由二氧化硅 (SiO
2
) 绝缘栅相隔离。
ISO7820LL 器件有两个正向通道。ISO7821LL 器件有
一条正向通道和一条反向通道。
凭借创新型芯片设计和布线技术,ISO782xLL系列器
件的电磁兼容性得到了显著增强,可缓解系统级
ESD、EFT 和浪涌问题并符合辐射标准。
ISO782xLL 系列器件提供 16 引脚 SOIC 宽体 (DW) 和
超宽体 (DWW) 两种封装。
器器件件信信息息
(1)
器器件件型型号号 封封装装 封封装装尺尺寸寸((标标称称值值))
ISO7820LL
ISO7821LL
DW (16) 10.30mm x 7.50mm
DWW (16) 10.30mm x 14.00mm
(1) 要了解所有可用封装,请见数据表末尾的可订购产品附录。
简简化化电电路路原原理理图图
V
CCI
和 GNDI 分别是输入通道的电源和接地连接。
V
CCO
和 GNDO 分别是输出通道的电源和接地连接。
2
ISO7820LL
,
ISO7821LL
ZHCSFT4A –MARCH 2016–REVISED AUGUST 2016
www.ti.com.cn
Copyright © 2016, Texas Instruments Incorporated
目目录录
1 特特性性.......................................................................... 1
2 应应用用.......................................................................... 1
3 说说明明.......................................................................... 1
4 修修订订历历史史记记录录 ........................................................... 2
5 Pin Configuration and Functions......................... 3
6 Specifications......................................................... 4
6.1 Absolute Maximum Ratings ..................................... 4
6.2 ESD Ratings.............................................................. 4
6.3 Recommended Operating Conditions....................... 4
6.4 Thermal Information.................................................. 5
6.5 Power Ratings........................................................... 5
6.6 Insulation Specifications............................................ 6
6.7 Safety-Related Certifications..................................... 7
6.8 Safety Limiting Values .............................................. 7
6.9 DC Electrical Characteristics .................................... 8
6.10 DC Supply Current Characteristics......................... 9
6.11 Switching Characteristics...................................... 11
6.12 Insulation Characteristics Curves ......................... 12
6.13 Typical Characteristics.......................................... 13
7 Parameter Measurement Information ................ 16
8 Detailed Description............................................ 19
8.1 Overview ................................................................. 19
8.2 Functional Block Diagram ....................................... 19
8.3 Feature Description................................................. 19
8.4 Device Functional Modes........................................ 20
9 Application and Implementation ........................ 21
9.1 Application Information............................................ 21
9.2 Typical Application .................................................. 21
10 Power Supply Recommendations ..................... 25
11 Layout................................................................... 26
11.1 Layout Guidelines ................................................. 26
11.2 Layout Example .................................................... 26
12 器器件件和和文文档档支支持持 ..................................................... 27
12.1 文档支持................................................................ 27
12.2 接收文档更新通知 ................................................. 27
12.3 社区资源................................................................ 27
12.4 商标 ....................................................................... 27
12.5 静电放电警告......................................................... 27
12.6 Glossary................................................................ 27
13 机机械械、、封封装装和和可可订订购购信信息息....................................... 27
4 修修订订历历史史记记录录
注:之前版本的页码可能与当前版本有所不同。
Changes from Original (March 2016) to Revision A Page
• 已更改 器件状态“
产品预览
”至“
量产数据
”并且已发布完整版本数据表 ..................................................................................... 1
ISOLATION
GND1 GND298
EN1 EN2
107
OUTB+ INB+116
OUTB± INB±125
INA± OUTA±134
INA+ OUTA+143
GND1 GND2152
V
CC1
V
CC2
161
GND1 GND298
NC EN2107
INB+ OUTB+116
INB± OUTB±125
INA± OUTA±134
INA+ OUTA+143
GND1 GND2152
V
CC1
V
CC2
161
ISOLATION
3
ISO7820LL
,
ISO7821LL
www.ti.com.cn
ZHCSFT4A –MARCH 2016–REVISED AUGUST 2016
Copyright © 2016, Texas Instruments Incorporated
5 Pin Configuration and Functions
ISO7820LL DW and DWW Packages
16-Pin SOIC
Top View
ISO7821LL DW and DWW Packages
16-Pin SOIC
Top View
Pin Functions
PIN
I/O DESCRIPTION
NAME
NO.
ISO7820LL ISO7821LL
EN1 — 7 I
Output enable 1. Output pins on side 1 are enabled when EN1 is high or open and
in high impedance state when EN1 is low.
EN2 10 10 I
Output enable 2. Output pins on side 2 are enabled when EN2 is high or open and
in high impedance state when EN2 is low.
GND1
2 2
— Ground connection for V
CC1
8 8
GND2
9 9
— Ground connection for V
CC2
15 15
INA+ 3 3 I Positive differential input, channel A
INA– 4 4 I Negative differential input, channel A
INB+ 6 11 I Positive differential input, channel B
INB– 5 12 I Negative differential input, channel B
NC 7 — — Not connected
OUTA+ 14 14 O Positive differential output, channel A
OUTA– 13 13 O Negative differential output, channel A
OUTB+ 11 6 O Positive differential output, channel B
OUTB– 12 5 O Negative differential output, channel B
V
CC1
1 1 — Power supply, side 1, V
CC1
V
CC2
16 16 — Power supply, side 2, V
CC2
4
ISO7820LL
,
ISO7821LL
ZHCSFT4A –MARCH 2016–REVISED AUGUST 2016
www.ti.com.cn
Copyright © 2016, Texas Instruments Incorporated
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings
only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended
Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2) All voltage values except differential I/O bus voltages are with respect to the local ground terminal (GND1 or GND2) and are peak
voltage values.
(3) Maximum voltage must not exceed 6 V.
6 Specifications
6.1 Absolute Maximum Ratings
over operating free-air temperature range (unless otherwise noted)
(1)
MIN MAX UNIT
V
CCx
Supply voltage
(2)
V
CC1
, V
CC2
–0.5 6 V
V
Voltage on input, output, and
enable pins
OUTx, INx, ENx –0.5 V
CCx
+ 0.5
(3)
V
I
O
Maximum current through OUTx pins –20 20 mA
T
J
Junction temperature –55 150 °C
T
stg
Storage temperature –65 150 °C
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.
6.2 ESD Ratings
VALUE UNIT
V
(ESD)
Electrostatic
discharge
Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001
(1)
±4500
V
Charged-device model (CDM), per JEDEC specification JESD22-C101
(2)
±1500
6.3 Recommended Operating Conditions
MIN NOM MAX UNIT
V
CC1
, V
CC2
Supply voltage 2.25 3.3 5.5 V
|V
ID
|
Magnitude of RX
input differential
voltage
Driven with voltage sources on
RX pins
100 600 mV
V
IC
RX input common-
mode voltage
V
CC1
, V
CC2
≥ 3 V 0.5 |V
ID
| 2.4 – 0.5 |V
ID
| V
V
CC1
, V
CC2
< 3 V 0.5 |V
ID
| V
CCx
– 0.6 – 0.5 |V
ID
| V
R
L
TX far end differential termination 100 Ω
DR Signaling rate 0 100 Mbps
T
A
Ambient temperature –55 25 125 °C
5
ISO7820LL
,
ISO7821LL
www.ti.com.cn
ZHCSFT4A –MARCH 2016–REVISED AUGUST 2016
Copyright © 2016, Texas Instruments Incorporated
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application
report.
6.4 Thermal Information
THERMAL METRIC
(1)
ISO7820LL
ISO7821LL
UNIT
DW (SOIC) DWW (SOIC)
16 PINS 16 PINS
R
θJA
Junction-to-ambient thermal resistance 82 84.6 °C/W
R
θJC(top)
Junction-to-case(top) thermal resistance 44.6 46.4 °C/W
R
θJB
Junction-to-board thermal resistance 46.6 55.3 °C/W
ψ
JT
Junction-to-top characterization parameter 17.8 18.7 °C/W
ψ
JB
Junction-to-board characterization parameter 46.1 54.5 °C/W
R
θJC(bottom)
Junction-to-case(bottom) thermal resistance — — ° C/W
6.5 Power Ratings
V
CC1
= V
CC2
= 5.5 V, T
J
= 150°C, C
L
= 5 pF, input a 50-MHz 50% duty-cycle square wave, EN1 = EN2 = 5.5 V,
R
L
= 100-Ω differential
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
ISO7821LL
P
D
Maximum power dissipation (both sides) 156 mW
P
D1
Maximum power dissipation (side 1) 78 mW
P
D2
Maximum power dissipation (side 2) 78 mW
ISO7820LL
P
D
Maximum power dissipation (both sides) 152 mW
P
D1
Maximum power dissipation (side 1) 36 mW
P
D2
Maximum power dissipation (side 2) 116 mW
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