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100 nF

Rf1

402 

Rload

500 

Rg1

191 

100 nF

Rg2

221 

60.2 

Output

Measurement

Point

THS4541 Wideband,

Fully-Differential Amplifier

50-Input Match Gain of

2 V/V from Rt Single-Ended

Source to Differential Output

Vocm

Rf2

402 

50-

Source

Vcc

Vocm

Vcc

FDA

Frequency (MHz)

Distortion (dBc)

0.1 1 10 50

-140

-130

-120

-110

-100

-90

-80

-70

-60

-50

D013

HD2

HD3

Product

Folder

Sample &

Buy

Technical

Documents

Tools &

Software

Support &

Community

THS4541

SLOS375 –AUGUST 2014

THS4541 Negative Rail Input, Rail-to-Rail Output, Precision, 850-MHz

Fully Differential Amplifier

1 Features 3 Description

The THS4541 is a low-power, voltage-feedback, fully

• Fully Differential Amplifier (FDA) Architecture

differential amplifier (FDA) with an input common-

• Bandwidth: 500 MHz (G = 2 V/V)

mode range below the negative rail, and rail-to-rail

• Gain Bandwidth Product: 850 MHz

output. Designed for low-power data acquisition

systems where high density is critical in a high-

• Slew Rate: 1500 V/µs

performance analog-to-digital converter (ADC) or

• HD

: –95 dBc at 10 MHz (2 V

, R

= 500 Ω)

digital-to-analog converter (DAC) interface design.

• HD

: –90 dBc at 10 MHz (2 V

, R

= 500 Ω)

The THS4541 features the negative-rail input

• Input Voltage Noise: 2.2 nV/Hz (f > 100 kHz)

required when interfacing a dc-coupled, ground-

• Low offset drift: ±0.5 µV/°C (typ)

centered, source signal. This negative-rail input, with

rail-to-rail output, allows for easy interface between

• Negative Rail Input (NRI)

single-ended, ground-referenced, bipolar signal

• Rail-to-Rail Output (RRO)

sources and a wide variety of SAR, ΔΣ, or pipeline

• Robust Operation for Rload ≥ 50 Ω

ADCs using only a single +2.7-V to +5.4-V power

• Output Common-Mode Control

supply.

• Power Supply:

The THS4541 is characterized for operation over the

– Single-Supply Voltage Range: 2.7 V to 5.4 V wide temperature range of –40°C to 125 ° C available

in 16-pin VQFN and 10-pin WQFN packages.

– Split-Supply Voltage Range: ±1.35 V to ±2.7 V

– Quiescent Current: 10.1 mA (5-V Supply)

Device Information

(1)

• Power-Down Capability: 2 µA (typ)

PART NUMBER PACKAGE BODY SIZE (NOM)

VQFN (16) 3.00 mm × 3.00 mm

THS4541

2 Applications

WQFN (10) 2.00 mm × 2.00 mm

• Low-Power, High-Performance ADC Driver

(1) For all available packages, see the package option addendum

at the end of the datasheet.

– SAR, ΔΣ, and Pipeline

• Low Power, High Performance

(DC or AC Coupled)

– Single-Ended to Differential Amplifier

– Differential to Differential Amplifier

• Differential Active Filters

• Differential Transimpedance for DAC Outputs

• DC- or AC-Coupled Interface to the ADC3xxx

Family of Low-Power, High-Performance ADCs

• Pin-Compatible Upgrade to ADA4932-1 (RGT)

Simplified Schematic Single to Differential Gain of 2, 2-V

Output

An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,

intellectual property matters and other important disclaimers. PRODUCTION DATA.

THS4541

SLOS375 –AUGUST 2014

www.ti.com

Table of Contents

8.6 Factors Influencing Harmonic Distortion................. 31

1 Features.................................................................. 1

8.7 Driving Capacitive Loads ........................................ 32

2 Applications ........................................................... 1

8.8 Thermal Analysis..................................................... 32

3 Description ............................................................. 1

9 Detailed Description............................................ 33

4 Revision History..................................................... 2

9.1 Overview ................................................................. 33

5 Device Family Comparison................................... 3

9.2 Functional Block Diagram ....................................... 34

6 Pin Configuration and Functions......................... 3

9.3 Feature Description................................................. 35

7 Specifications......................................................... 4

9.4 Device Functional Modes........................................ 36

7.1 Absolute Maximum Ratings ...................................... 4

10 Application And Implementation....................... 44

7.2 Handling Ratings....................................................... 4

10.1 Application Information.......................................... 44

7.3 Recommended Operating Conditions....................... 4

10.2 Typical Applications .............................................. 44

7.4 Thermal Information.................................................. 4

11 Power-Supply Recommendations ..................... 49

7.5 Electrical Characteristics: Vs+ – Vs– = 5 V ............. 5

12 Layout................................................................... 50

7.6 Electrical Characteristics: Vs+ – Vs– = 3 V ............. 8

12.1 Layout Guidelines ................................................. 50

7.7 Typical Characteristics: 5-V Single Supply ............. 11

12.2 Layout Example .................................................... 51

7.8 Typical Characteristics: 3-V Single Supply ............. 14

13 Device and Documentation Support ................. 52

7.9 Typical Characteristics: 3-V to 5-V Supply Range.. 17

13.1 Device Support...................................................... 52

8 Parameter Measurement Information ................ 21

13.2 Trademarks........................................................... 52

8.1 Example Characterization Circuits.......................... 21

13.3 Electrostatic Discharge Caution............................ 52

8.2 Frequency-Response Shape Factors ..................... 23

13.4 Glossary................................................................ 52

8.3 I/O Headroom Considerations ................................ 26

14 Mechanical, Packaging, and Orderable

8.4 Output DC Error and Drift Calculations and the Effect

Information ........................................................... 52

of Resistor Imbalances ............................................ 28

8.5 Noise Analysis......................................................... 30

4 Revision History

DATE REVISION NOTES

August 2014 * Initial release.

Product Folder Links: THS4541

THS4541

SLOS375 –AUGUST 2014

www.ti.com

7 Specifications

7.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted)

(1)

MIN MAX UNIT

Supply voltage, Vs+ – Vs– 5.5 V

Voltage Input/output voltage range (Vs–) – 0.5 (Vs+) + 0.5 V

Differential input voltage ±1 V

Continuous input current ±20 mA

Current Continuous output current ±80 mA

Continuous power dissipation See Thermal Information table and Thermal Analysis section

Maximum junction temperature 150 °C

Temperature

Operating free-air temperature range –40 125 °C

(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings

only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended

Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

7.2 Handling Ratings

MIN MAX UNIT

stg

Storage temperature range –65 150 °C

Human body model (HBM), per ANSI/ESDA/JEDEC JS-001, all pins

(1)

–2000 2000

Electrostatic

(ESD)

Charged device model (CDM), per JEDEC specification JESD22-C101, all pins

(2)

–500 500 V

discharge

Machine model

(2)

–150 150

(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.

(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

7.3 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)

MIN NOM MAX UNIT

Vs+ Single-supply voltage 2.7 5 5.4 V

Ambient temperature –40 25 125 °C

7.4 Thermal Information

THS4541

THERMAL METRIC

(1)

RGT (VQFN) RUN (WQFN) UNIT

16 PINS 10 PINS

θJA

Junction-to-ambient thermal resistance 52 146

θJC(top)

Junction-to-case (top) thermal resistance 69 75

θJB

Junction-to-board thermal resistance 25 39

°C/W

Junction-to-top characterization parameter 2.7 14

Junction-to-board characterization parameter 25 105

θJC(bot)

Junction-to-case (bottom) thermal resistance 9.3 47

(1) For more information about traditional and new thermal metrics, see the IC Package Thermal Metrics application report, SPRA953.

Product Folder Links: THS4541

THS4541

www.ti.com

SLOS375 –AUGUST 2014

7.5 Electrical Characteristics: Vs+ – Vs– = 5 V

At T

≈ 25°C, Vocm = open (defaults midsupply), V

OUT

= 2 V

, Rf = 402 Ω, Rload = 499 Ω, 50-Ω input match, G = 2 V/V,

single-ended input, differential output, and PD = +Vs, unless otherwise noted. See Figure 61 for an ac-coupled gain of a

2-V/V test circuit, and Figure 63 for a dc-coupled gain of a 2-V/V test circuit.

TEST

PARAMETER TEST CONDITIONS MIN TYP MAX UNIT LEVEL

(1)

AC PERFORMANCE

Vout = 100 mV

, G = 1 620 MHz C

Vout = 100 mV

, G = 2 (see Figure 61) 500 MHz C

Small-signal bandwidth

Vout = 100 mV

, G = 5 210 MHz C

Vout = 100 mV

, G = 10 125 MHz C

Gain-bandwidth product Vout = 100 mV

, G = 20 850 MHz C

Large-signal bandwidth Vout = 2 V

, G = 2 (see Figure 61) 340 MHz C

Bandwidth for 0.1-dB flatness Vout = 2 V

, G = 2 (see Figure 61) 100 MHz C

Slew rate

(2)

Vout = 2-V

, FPBW (see Figure 61) 1500 V/µs C

Vout = 2-V step, G = 2 input ≤ 0.3 ns t

Rise/fall time 1.4 ns C

(see Figure 63)

To 1%, Vout = 2-V step, t

= 2 ns, G = 2

4 ns C

(seeFigure 63)

Settling time

To 0.1%,Vout = 2-V step, t

= 2 ns, G = 2

8 ns C

(see Figure 63)

Vout = 2-V step G = 2, input ≤ 0.3 ns t

Overshoot and undershoot 10% C

(see Figure 63)

Vout = 2 V

, G = 2, HD2 (see Figure 61) –140 dBc C

100-kHz harmonic distortion

Vout = 2 V

, G = 2, HD3 (see Figure 61) –140 dBc C

Vout = 2 V

, G = 2, HD2 (see Figure 61) –95 dBc C

10-MHz harmonic distortion

Vout = 2 V

, G = 2, HD3 (see Figure 61) –90 dBc C

f = 10 MHz, 100-kHz tone spacing,

2nd-order intermodulation distortion –90 dBc C

Vout envelope = 2 V

(1 V

per tone)

(see Figure 61)

f = 10 MHz, 100-kHz tone spacing,

3rd-order intermodulation distortion –85 dBc C

Vout envelope = 2 V

(1 V

per tone)

(see Figure 61)

Input voltage noise f > 100 kHz 2.2 nV/√Hz C

Input current noise f > 1 MHz 1.9 pA/√Hz C

Overdrive recovery time 2X output overdrive, either polarity 20 ns C

Closed-loop output impedance f = 10 MHz (differential) 0.1 Ω C

(1) Test levels (all values set by characterization and simulation): (A) 100% tested at 25°C; over temperature limits by characterization and

simulation. (B) Not tested in production; limits set by characterization and simulation. (C) Typical value only for information.

(2) This slew rate is the average of the rising and falling time extracted from the large-signal bandwidth as: (V

/ √2) · 2π · f

–3dB

Product Folder Links: THS4541

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