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12-Bit Shift Register

LED Driver

Power Supply

4/3

Typical Cascade Topology

12-Bit Shift Register

LED Driver

MCU Serial

Interface

12-Bit Shift-

Register

LED Driver

3 12 LED Matrix´

4/3

I/Os

Power Supply

Typical Scan Topology

MCU Serial

Interface

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An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,

intellectual property matters and other important disclaimers. PRODUCTION DATA.

English Data Sheet: SLIS180

TLC6C5912

ZHCSF22 –MAY 2016

TLC6C5912 12 通通道道移移位位寄寄存存器器 LED 驱驱动动器器

1

1 特特性性

1

• 3V 至 5.5V 宽 V

CC

范围

• 40V 最大额定输出

• 12 路功率双扩散金属氧化物半导体 (DMOS) 晶体

管输出：

50mA 持续电流 (V

CC

= 5V) 或者

200mA 脉宽调制 (PWM) 电流（单脉冲持续时间短

于 1ms 且平均电流低于 50mA

r

）

• 热关断保护

• 针对多级的增强型级联

• 所有寄存器由单一输入清零

• 低功耗

• 缓慢开关时间（t 和 t

f

），非常有助于减少电磁干扰

(EMI)

• 20 引脚薄型小外形尺寸 (TSSOP)-PW 封装

2 应应用用

• 电器显示面板

• 电梯显示面板

• PLC 功能指示器

• 七段显示器

3 说说明明

TLC6C5912 是一款单片、中等电压、低电流功率 12

位移位寄存器，专为负载功率要求相对适中的系统（例

如 LED）而设计。

此器件包含一个 12 位串入、并出移位寄存器，此寄存

器为一个 12 位 D 类存储寄存器提供数据。移位和存

储寄存器之间的数据传输分别在移位寄存器时钟

(SRCK) 和寄存器时钟 (RCK) 的上升边沿上发生。当

移位寄存器清零(CLR) 为高电平时，存储寄存器将数据

传输到输出缓冲器。一个CLR上的低电平将器件中的

所有寄存器清零。将输出使能 (G) 保持为高电平将把

输出缓冲器中的所有数据保存为低电平，并且所有漏极

输出关闭。保持G为低电平将使得来自存储寄存器中的

数据对于输出缓冲器不可见。

该器件包含一个 12 位串入并出移位寄存器。该寄存器

为一个 12 位 D 类存储寄存器提供数据。移位寄存器

和存储寄存器各自具备独立时钟。

输出为低侧、漏极开路 DMOS 晶体管输出：额定输出

为 40V 及 50mA 持续灌电流或者 200mA PWM 电流

（V

CC

= 5V 时，单脉冲持续时间短于 1ms 且平均电流

低于 50mA）。该器件内置热关断保护，在人体模型和

200V 机器模型测试中可提供高达 2000V 的静电放电

(ESD) 保护。

TLC6C5912 的额定工作环境温度范围为 -40°C 至

105°C。

器器件件信信息息

(1)

器器件件型型号号封封装装封封装装尺尺寸寸（（标标称称值值））

TLC6C5912

薄型小外形尺寸封

装 (TSSOP) (20)

6.50mm x 4.40mm

(1) 要了解所有可用封装，请见数据表末尾的可订购产品附录。

典典型型应应用用电电路路原原理理图图

2

TLC6C5912

ZHCSF22 –MAY 2016

www.ti.com.cn

目目录录

1 特特性性.......................................................................... 1

2 应应用用.......................................................................... 1

3 说说明明.......................................................................... 1

4 修修订订历历史史记记录录 ........................................................... 2

5 Pin Configuration and Functions......................... 3

6 Specifications......................................................... 4

6.1 Absolute Maximum Ratings ...................................... 4

6.2 ESD Ratings.............................................................. 4

6.3 Recommended Operating Conditions....................... 4

6.4 Thermal Information.................................................. 5

6.5 Electrical Characteristics........................................... 5

6.6 Switching Characteristics.......................................... 5

6.7 Typical Characteristics.............................................. 7

7 Parameter Measurement Information .................. 9

8 Detailed Description............................................ 10

8.1 Overview ................................................................. 10

8.2 Functional Block Diagram ....................................... 10

8.3 Feature Description................................................. 10

8.4 Device Functional Modes........................................ 11

9 Application and Implementation ........................ 12

9.1 Application Information............................................ 12

9.2 Typical Application ................................................. 12

10 Power Supply Recommendations ..................... 15

11 Layout................................................................... 15

11.1 Layout Guidelines ................................................. 15

11.2 Layout Example .................................................... 15

12 器器件件和和文文档档支支持持 ..................................................... 16

12.1 社区资源................................................................ 16

12.2 商标 ....................................................................... 16

12.3 静电放电警告......................................................... 16

12.4 Glossary................................................................ 16

13 机机械械、、封封装装和和可可订订购购信信息息....................................... 16

4 修修订订历历史史记记录录

注：之前版本的页码可能与当前版本有所不同。

日日期期修修订订版版本本注注

2016 年 5 月 * 最初发布版本

4

TLC6C5912

ZHCSF22 –MAY 2016

www.ti.com.cn

Pin Functions (continued)

I/O DESCRIPTION

NAME NO.

SER OUT 11 O

Serial-data output: SER OUT is the serial data output of the 12−bit serial shift register. The

purpose of this pin is to cascade several devices on the serial bus. By connecting the SER

OUT pin to the SER IN input of the next device on the serial bus to cascade, the data

transfers to the next device on the falling edge of SRCK. This can improve the cascade

application reliability, as it can avoid the issue that the second device receives SRCK and

data input at the same rising edge of SRCK.

SRCK 19 I

Shift-register clock: SRCK is the serial clock input. On each rising SRCK edge, data

transfers from SER IN to the internal serial shift registers.

V

CC

1 I

Power supply: V

CC

is the power supply pin voltage for the device. TI recommends adding a

0.1 μF ceramic capacitor close to the pin.

(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings

only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended

Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

6 Specifications

6.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted)

(1)

MIN MAX UNIT

V

CC

Logic supply voltage 8 V

V

I

Logic input-voltage –0.3 8 V

V

DS

Power DMOS drain-to-source voltage 42 V

Continuous total dissipation See Thermal Information

Operating ambient temperature (Top) 105 °C

T

J

Operating junction temperature –40 125 °C

T

stg

Storage temperature –55 165 °C

(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.

(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

6.2 ESD Ratings

VALUE UNIT

V

(ESD)

Electrostatic discharge

Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001

(1)

±2000

V

Charged-device model (CDM), per JEDEC specification JESD22-

C101

(2)

±750

6.3 Recommended Operating Conditions

MIN MAX UNIT

V

CC

Supply voltage 3 5.5 V

V

IH

High-level input voltage 2.4 V

V

IL

Low-level input voltage 0.7 V

t

su

Setup time, SER IN high before SRCK↑ 15 ns

t

h

Hold time, SER IN high after SRCK↑ 15 ns

t

w

Pulse duration 40 ns

T

A

Operating ambient temperature –40 105 °C

5

TLC6C5912

www.ti.com.cn

ZHCSF22 –MAY 2016

(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application

report, SPRA953.

6.4 Thermal Information

THERMAL METRIC

(1)

TLC6C5912

UNITPW (TSSOP)

20 PINS

R

θJA

Junction-to-ambient thermal resistance 114.8 °C/W

R

θJC(top)

Junction-to-case (top) thermal resistance 44.1 °C/W

R

θJB

Junction-to-board thermal resistance 61.3 °C/W

ψ

JT

Junction-to-top characterization parameter 4.7 °C/W

ψ

JB

Junction-to-board characterization parameter 60.8 °C/W

6.5 Electrical Characteristics

V

CC

= 5 V, T

A

= 25°C (unless otherwise noted)

PARAMETER TEST CONDITIONS MIN TYP MAX UNIT

DRAIN0 to DRAIN11,

drain-to-source voltage

40 V

V

OH

High-level output voltage,

SER OUT

I

OH

= –20 μA

V

CC

= 5 V

4.9 4.99

V

I

OH

= –4 mA 4.5 4.69

V

OL

Low-level output voltage,

SER OUT

I

OH

= 20 μA

V

CC

= 5 V

0.001 0.01

V

I

OH

= 4 mA 0.25 0.4

I

IH

High-level input current V

CC

= 5 V, V

I

= V

CC

0.2 μA

I

IL

Low-level input current V

CC

= 5 V, V

I

= 0 –0.2 μA

I

CC

Logic supply current

V

CC

= 5 V,

No clock signal

All outputs off 0.1 1

μA

All outputs on 130 170

I

CC(FRQ)

Logic supply current at

frequency

f

SRCK

= 5 MHz, C

L

= 30 pF, all outputs on 300 µA

I

DSX

Off-state drain current

V

DS

= 30 V, V

CC

= 5 V 0.1

μA

V

DS

= 30 V, T

C

= 125°C, V

CC

= 5 V 0.15 0.3

r

DS(on)

Static drain-source on-state

resistance

I

D

= 20 mA, V

CC

= 5 V, T

A

= 25°C, single channel ON 6 7.4 8.6

Ω

I

D

= 20 mA, V

CC

= 5 V, T

A

= 25°C, all channels ON 6.7 8.9 9.6

I

D

= 20 mA, V

CC

= 3.3 V, T

A

= 25°C, single channel ON 7.9 9.3 11.2

I

D

= 20 mA, V

CC

= 3.3 V, T

A

= 25°C, all channels ON 8.7 10.6 12.3

I

D

= 20 mA, V

CC

= 5 V, T

A

= 105°C, single channel ON 9.1 11.2 12.9

I

D

= 20 mA, V

CC

= 5 V, T

A

= 105°C, all channels ON 10.3 13 14.5

I

D

= 20 mA, V

CC

= 3.3 V, T

A

= 105°C, single channel ON 11.6 13.7 16.4

I

D

= 20 mA, V

CC

= 3.3 V, T

A

= 105°C, all channels ON 12.8 15.6 18.2

T

SHUTDOWN

Thermal shutdown trip point 150 175 200 °C

t

HYS

Hysteresis 15 °C

6.6 Switching Characteristics

V

CC

= 5 V, T

A

= 25°C

PARAMETER TEST CONDITIONS MIN TYP MAX UNIT

t

PLH

Propagation delay time, low-to-high-level output from G

C

L

= 30 pF, I

D

= 48 mA

210 ns

t

PHL

Propagation delay time, high-to-low-level output from G 75 ns

t

r

Rise time, drain output 250 ns

t

f

Fall time, drain output 200 ns

t

pd

Propagation delay time, SRCK↓ to SEROUT C

L

= 30 pF, I

D

= 48 mA 35 ns

t

or

SEROUT rise time (10% to 90%) C

L

= 30 pF 20 ns

t

of

SEROUT fall time (90% to 10%) C

L

= 30 pF 20 ns

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