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IPA60R120P7 INFINEON 英飞凌 电子元器件芯片.pdf
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IPA60R120P7 英飞凌 电子元器件芯片 本文档介绍了IPA60R120P7 Infineon 英飞凌 电子元器件芯片的详细信息。该芯片是一种高压电源 MOSFET,基于 CoolMOS™ P7 平台设计,具有高速开关、低损耗和高可靠性等特点。 IPA60R120P7 芯片的特点包括: * 适用于硬开关和软开关(PFC 和 LLC)应用,具有出色的 commutation ruggedness *_switching 和 conduction 损耗非常低,提高了开关应用的效率和可靠性 * 具有出色的 ESD 能力,抗静电能力高达 2kV(HBM) * 具有低 RDS(on) 值,提高了电源密度和制造质量 * 适用于多种应用和电源范围,例如 PFC 阶段、硬开关 PWM 阶段和谐振开关阶段 IPA60R120P7 芯片的参数包括: * 最高耐压 VDS:650V * 最大 RDS(on):120mΩ *typically Qg:36nC * ID,pulse:78A * Eoss @ 400V:4.0µJ * Body diode diF/dt:900A/µs IPA60R120P7 芯片的应用范围广泛,包括 PC Silverbox、Adapter、LCD & PDP TV、Lighting、Server、Telecom 和 UPS 等领域。 IPA60R120P7 英飞凌 电子元器件芯片是高压电源 MOSFET 领域的优秀选择,具有高速开关、低损耗和高可靠性等特点,适用于多种应用和电源范围。
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1
IPA60R120P7
Rev.2.1,2018-05-15Final Data Sheet
PG-TO220FP
Drain
Pin 2
Gate
Pin 1
Source
Pin 3
MOSFET
600VCoolMOSªP7PowerTransistor
TheCoolMOS™7thgenerationplatformisarevolutionarytechnologyfor
highvoltagepowerMOSFETs,designedaccordingtothesuperjunction
(SJ)principleandpioneeredbyInfineonTechnologies.The600V
CoolMOS™P7seriesisthesuccessortotheCoolMOS™P6series.It
combinesthebenefitsofafastswitchingSJMOSFETwithexcellentease
ofuse,e.g.verylowringingtendency,outstandingrobustnessofbody
diodeagainsthardcommutationandexcellentESDcapability.
Furthermore,extremelylowswitchingandconductionlossesmake
switchingapplicationsevenmoreefficient,morecompactandmuch
cooler.
Features
•Suitableforhardandsoftswitching(PFCandLLC)duetoanoutstanding
commutationruggedness
•Significantreductionofswitchingandconductionlosses
•ExcellentESDrobustness>2kV(HBM)forallproducts
•BetterR
DS(on)
/packageproductscomparedtocompetitionenabledbya
lowR
DS(on)
*A(below1Ohm*mm²)
•Fullyqualifiedacc.JEDECforIndustrialApplications
Benefits
•Easeofuseandfastdesign-inthroughlowringingtendencyandusage
acrossPFCandPWMstages
•Simplifiedthermalmanagementduetolowswitchingandconduction
losses
•Increasedpowerdensitysolutionsenabledbyusingproductswith
smallerfootprintandhighermanufacturingqualitydueto>2kVESD
protection
•Suitableforawidevarietyofapplicationsandpowerranges
Potentialapplications
PFCstages,hardswitchingPWMstagesandresonantswitchingstages
fore.g.PCSilverbox,Adapter,LCD&PDPTV,Lighting,Server,Telecom
andUPS.
Pleasenote:ForMOSFETparallelingtheuseofferritebeadsonthegate
orseparatetotempolesisgenerallyrecommended.
Table1KeyPerformanceParameters
Parameter Value Unit
V
DS
@ T
j,max
650 V
R
DS(on),max
120 mΩ
Q
g,typ
36 nC
I
D,pulse
78 A
E
oss
@ 400V 4.0 µJ
Body diode di
F
/dt 900 A/µs
Type/OrderingCode Package Marking RelatedLinks
IPA60R120P7 PG-TO 220 FullPAK 60R120P7 see Appendix A
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2
600VCoolMOSªP7PowerTransistor
IPA60R120P7
Rev.2.1,2018-05-15Final Data Sheet
TableofContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Test Circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Appendix A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
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3
600VCoolMOSªP7PowerTransistor
IPA60R120P7
Rev.2.1,2018-05-15Final Data Sheet
1Maximumratings
atT
j
=25°C,unlessotherwisespecified
Table2Maximumratings
Values
Min. Typ. Max.
Parameter Symbol Unit Note/TestCondition
Continuous drain current
1)
I
D
-
-
-
-
26
16
A
T
C
=25°C
T
C
=100°C
Pulsed drain current
2)
I
D,pulse
- - 78 A T
C
=25°C
Avalanche energy, single pulse E
AS
- - 82 mJ I
D
=5.0A; V
DD
=50V; see table 10
Avalanche energy, repetitive E
AR
- - 0.41 mJ I
D
=5.0A; V
DD
=50V; see table 10
Avalanche current, single pulse I
AS
- - 5.0 A -
MOSFET dv/dt ruggedness dv/dt - - 80 V/ns V
DS
=0...400V
Gate source voltage (static) V
GS
-20 - 20 V static;
Gate source voltage (dynamic) V
GS
-30 - 30 V AC (f>1 Hz)
Power dissipation P
tot
- - 28 W T
C
=25°C
Storage temperature T
stg
-55 - 150 °C -
Operating junction temperature T
j
-55 - 150 °C -
Mounting torque - - - 50 Ncm M2.5 screws
Continuous diode forward current I
S
- - 26 A T
C
=25°C
Diode pulse current
2)
I
S,pulse
- - 78 A T
C
=25°C
Reverse diode dv/dt
3)
dv/dt - - 50 V/ns
V
DS
=0...400V,I
SD
<=26A,T
j
=25°C
see table 8
Maximum diode commutation speed di
F
/dt - - 900 A/µs
V
DS
=0...400V,I
SD
<=26A,T
j
=25°C
see table 8
Insulation withstand voltage V
ISO
- - 2500 V V
rms
,T
C
=25°C,t=1min
1)
Limited by T
j,max
. Maximum Duty Cycle D = 0.50; TO-220 equivalent
2)
Pulse width t
p
limited by T
j,max
3)
Identical low side and high side switch with identical R
G
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