IPW60R120P7 INFINEON 英飞凌芯片 中文版规格书手册.pdf

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IPW60R120P7

Rev.2.1,2018-05-15Final Data Sheet

PG-TO247-3

CoolMOS™P7seriesisthesuccessortotheCoolMOS™P6series.It

combinesthebenefitsofafastswitchingSJMOSFETwithexcellentease

ofuse,e.g.verylowringingtendency,outstandingrobustnessofbody

diodeagainsthardcommutationandexcellentESDcapability.

Furthermore,extremelylowswitchingandconductionlossesmake

switchingapplicationsevenmoreefficient,morecompactandmuch

cooler.

•Suitableforhardandsoftswitching(PFCandLLC)duetoanoutstanding

 commutationruggedness

•Fullyqualifiedacc.JEDECforIndustrialApplications

•Easeofuseandfastdesign-inthroughlowringingtendencyandusage

 acrossPFCandPWMstages

•Simplifiedthermalmanagementduetolowswitchingandconduction

 losses

•Increasedpowerdensitysolutionsenabledbyusingproductswith

 smallerfootprintandhighermanufacturingqualitydueto>2kVESD

 protection

•Suitableforawidevarietyofapplicationsandpowerranges

V

@ T

650 V

R

Q

36 nC

I

78 A

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Rev.2.1,2018-05-15Final Data Sheet

Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4

Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5

Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7

Test Circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11

Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12

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Rev.2.1,2018-05-15Final Data Sheet

Continuous drain current

-

-

-

-

=25°C

=100°C

Avalanche energy, repetitive E

- - 0.41 mJ I

=5.0A; V

=50V; see table 10

Avalanche current, single pulse I

- - 5.0 A -

MOSFET dv/dt ruggedness dv/dt - - 80 V/ns V

=0...400V

Gate source voltage (static) V

-20 - 20 V static;

Gate source voltage (dynamic) V

-30 - 30 V AC (f>1 Hz)

Mounting torque - - - 60 Ncm M3 and M3.5 screws

Continuous diode forward current I

- - 26 A T

=25°C

Diode pulse current

- - 78 A T

=25°C

Reverse diode dv/dt

=0...400V,I

Insulation withstand voltage V

- - n.a. V V

,T

=25°C,t=1min

1)

j,max

2)

p

j,max

3)