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IPW60R075CPA INFINEON 英飞凌芯片 中文版规格书手册.pdf
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IPW60R075CPA INFINEON 英飞凌芯片 中文版规格书手册
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IPW60R075CPA
CoolMOS
TM
Power Transistor
Features
• Lowest figure-of-merit R
ON
x Q
g
• Ultra low gate charge
• Extreme dv/dt rated
• High peak current capability
• Automotive AEC Q101 qualified
• Green package (RoHS compliant)
CoolMOS CPA is specially designed for:
• DC/DC converters for Automotive Applications
Maximum ratings, at T
j
=25 °C, unless otherwise specified
Parameter Symbol Conditions Unit
Continuous drain current
I
D
T
C
=25 °C
A
T
C
=100 °C
Pulsed drain current
1)
I
D,pulse
T
C
=25 °C
Avalanche energy, single pulse
E
AS
I
D
=11 A, V
DD
=50 V
1150 mJ
Avalanche energy, repetitive t
AR
1),2)
E
AR
I
D
=11 A, V
DD
=50 V
Avalanche current, repetitive t
AR
1),2)
I
AR
A
MOSFET dv /dt ruggedness dv /dt
V
DS
=0...480 V
V/ns
Gate source voltage
V
GS
static V
Power dissipation
P
tot
T
C
=25 °C
W
Operating temperature
T
j
°C
Storage temperature
T
stg
Mounting torque M3 and M3.5 screws 60 Ncm
-40 ... 150
313
-40 ... 150
1.7
11
50
±20
Value
39
25
130
V
DS
600 V
R
DS(on),max
0.075
Ω
Q
g,typ
87 nC
Product Summary
Type Package Marking
IPW60R075CPA PG-TO247-3 6R075PA
PG-TO247-3
Rev. 2.0 page 1 2010-02-15
IPW60R075CPA
Maximum ratings, at T
j
=25 °C, unless otherwise specified
Parameter Symbol Conditions Unit
Continuous diode forward current
I
S
A
Diode pulse current
1)
I
S,pulse
117
Reverse diode dv/dt
3)
dv /dt
15 V/ns
Parameter Symbol Conditions Unit
min. typ. max.
Thermal characteristics
Thermal resistance, junction - case
R
thJC
- - 0.4 K/W
R
thJA
leaded - - 62
Soldering temperature,
wavesoldering only allowed at leads
T
sold
1.6 mm (0.063 in.)
from case for 10 s
- - 260 °C
Electrical characteristics, at T
j
=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
V
(BR)DSS
V
GS
=0 V, I
D
=250 µA
600 - - V
Gate threshold voltage
V
GS(th)
V
DS
=V
GS
, I
D
=1.74 mA
2.5 3 3.5
Zero gate voltage drain current
I
DSS
V
DS
=600 V, V
GS
=0 V,
T
j
=25 °C
--5µA
Gate-source leakage current
I
GSS
V
GS
=20 V, V
DS
=0 V
- - 100 nA
Drain-source on-state resistance
R
DS(on)
V
GS
=10 V, I
D
=26 A,
T
j
=25 °C
- 0.068 0.075
Ω
V
GS
=10 V, I
D
=26 A,
T
j
=150 °C
- 0.18 -
Gate resistance
R
G
f =1 MHz, open drain
- 1.3 -
Ω
Value
T
C
=25 °C
26
Values
Thermal resistance, junction -
ambient
Rev. 2.0 page 2 2010-02-15
IPW60R075CPA
Parameter Symbol Conditions Unit
min. typ. max.
Dynamic characteristics
Input capacitance
C
iss
- 4000 - pF
Output capacitance
C
oss
- 190 -
Effective output capacitance, energy
related
4)
C
o(er)
- 180 -
Effective output capacitance, time
related
5)
C
o(tr)
- 480 -
Turn-on delay time
t
d(on)
-40-ns
Rise time
t
r
-17-
Turn-off delay time
t
d(off)
- 110 -
Fall time
t
f
-7-
Gate Charge Characteristics
Gate to source charge
Q
gs
-20-nC
Gate to drain charge
Q
gd
-30-
Gate charge total
Q
g
- 87 116
Gate plateau voltage
V
plateau
- 5.0 - V
Reverse Diode
Diode forward voltage
V
SD
V
GS
=0 V, I
F
=26 A,
T
j
=25 °C
- 0.9 1.2 V
Reverse recovery time
t
rr
- 500 - ns
Reverse recovery charge
Q
rr
-15-µC
Peak reverse recovery current
I
rrm
-58-A
1)
Pulse width t
p
limited by T
j,max
2)
Repetitive avalanche causes additional power losses that can be calculated as P
AV
=E
AR
*f.
3)
I
SD
≤I
D
, di /dt ≤100A/µs, V
DClink
=400V, V
peak
<V
(BR)DSS
, T
j
<T
jmax
, identical low side and high side switch
4)
C
o(er)
is a fixed capacitance that gives the same stored energy as C
oss
while V
DS
is rising from 0 to 80% V
DSS.
5)
C
o(tr)
is a fixed capacitance that gives the same charging time as C
oss
while V
DS
is rising from 0 to 80% V
DSS.
V
R
=400 V, I
F
=I
S
,
di
F
/dt =100 A/µs
Values
V
GS
=0 V, V
DS
=100 V,
f =1 MHz
V
DD
=400 V,
V
GS
=10 V, I
D
=26 A,
R
G
=7.6 Ω
V
DD
=400 V, I
D
=26 A,
V
GS
=0 to 10 V
V
GS
=0 V, V
DS
=0 V
to 480 V
Rev. 2.0 page 3 2010-02-15
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