IPP120P04P4L03AKSA1 INFINEON 英飞凌 电子元器件芯片.pdf
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IPB120P04P4L-03
IPI120P04P4L-03, IPP120P04P4L-03
OptiMOS
®
-P2 Power-Transistor
Features
• P-channel - Logic Level - Enhancement mode
• AEC qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Green package (RoHS compliant)
• 100% Avalanche tested
Maximum ratings, at T
j
=25 °C, unless otherwise specified
Parameter Symbol Conditions Unit
Continuous drain current
1)
I
D
T
C
=25°C,
V
GS
=-10V
-120 A
T
C
=100°C,
V
GS
=-10V
2)
-114
Pulsed drain current
2)
I
D,pulse
T
C
=25°C
-480
Avalanche energy, single pulse
E
AS
I
D
=-60A
78 mJ
Avalanche current, single pulse
I
AS
-
-120 A
Gate source voltage
V
GS
-
±16
3)
V
Power dissipation
P
tot
T
C
=25 °C
136 W
Operating and storage temperature
T
j
, T
stg
- -55 ... +175 °C
IEC climatic category; DIN IEC 68-1 - - 55/175/56
Value
V
DS
-40 V
R
DS(on)
(SMD Version) 3.1
mW
I
D
-120 A
Product Summary
Type Package Marking
IPB120P04P4L-03 PG-TO263-3-2 4PP04L03
IPI120P04P4L-03 PG-TO262-3-1 4PP04L03
IPP120P04P4L-03 PG-TO220-3-1 4PP04L03
PG
-
TO220
-
3
-
1
PG
-
TO262
-
3
-
1
PG
-
TO263
-
3
-
2
Rev. 1.1
page 1 2015-05-27
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