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IPP120N10S405AKSA1 INFINEON 英飞凌芯片 中文版规格书手册.pdf
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IPP120N10S405AKSA1 INFINEON 英飞凌芯片 中文版规格书手册
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IPB120N10S4-05
IPI120N10S4-05, IPP120N10S4-05
OptiMOS
®
-T2 Power-Transistor
Features
• N-channel - Normal Level - Enhancement mode
• AEC Q101 qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Green Product (RoHS compliant)
• 100% Avalanche tested
Maximum ratings, at T
j
=25 °C, unless otherwise specified
Parameter Symbol Conditions Unit
Continuous drain current
I
D
T
C
=25°C, V
GS
=10V
1)
120 A
T
C
=100°C, V
GS
=10V
2)
95
Pulsed drain current
2)
I
D,pulse
T
C
=25°C
480
Avalanche energy, single pulse
2)
E
AS
I
D
=60A
330 mJ
Avalanche current, single pulse
I
AS
-
120 A
Gate source voltage
V
GS
- ±20 V
Power dissipation
P
tot
T
C
=25°C
190 W
Operating and storage temperature
T
j
, T
stg
- -55 ... +175 °C
Value
V
DS
100 V
R
DS(on),max
(SMD version) 5.0
mW
I
D
120 A
Product Summary
Type Package Marking
IPB120N10S4-05 PG-TO263-3-2 4N1005
IPI120N10S4-05 PG-TO262-3-1 4N1005
IPP120N10S4-05 PG-TO220-3-1 4N1005
PG
-
TO220
-
3
-
1
PG
-
TO262
-
3
-
1
PG
-
TO263
-
3
-
2
Rev.1.0
page 1 2014-07-01
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