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AUIRF7737L2TR INFINEON 英飞凌 电子元器件芯片.pdf
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AUIRF7737L2TR INFINEON 英飞凌 电子元器件芯片
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www.irf.com 1
AUIRF7737L2TR
AUIRF7737L2TR1
AUTOMOTIVE GRADE
HEXFET
®
is a registered trademark of International Rectifier.
11/08/10
Description
The AUIRF7737L2 combines the latest Automotive HEXFET® Power MOSFET Silicon technology with the advanced DirectFET® packaging
technology to achieve exceptional performance in a package that has the footprint of a DPak (TO-252AA) and only 0.7 mm profile. The
DirectFET® package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-
red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The
DirectFET® package allows dual sided cooling to maximize thermal transfer in automotive power systems.
This HEXFET® Power MOSFET is designed for applications where efficiency and power density are of value. The advanced DirectFET® packaging
platform coupled with the latest silicon technology allows the AUIRF7737L2 to offer substantial system level savings and performance improvement
specifically in motor drive, high frequency DC-DC and other heavy load applications on ICE, HEV and EV platforms. This MOSFET utilizes the latest
processing techniques to achieve low on-resistance and low Qg per silicon area. Additional features of this MOSFET are 175°C operating junction
temperature and high repetitive peak current capability. These features combine to make this MOSFET a highly efficient, robust and reliable
device for high current automotive applications.
Applicable DirectFET
®
Outline and Substrate Outline
DirectFET
®
ISOMETRIC
L6
SB SC M2 M4 L4 L6 L8
DD
G
S
S
S
S
S
S
V
(BR)DSS
40V
R
DS(on)
typ.
1.5m
Ω
max.
1.9m
Ω
I
D (Silicon Limited)
156A
Q
g
89nC
• Advanced Process Technology
• Optimized for Automotive Motor Drive, DC-DC and
other Heavy Load Applications
• Exceptionally Small Footprint and Low Profile
• High Power Density
• Low Parasitic Parameters
• Dual Sided Cooling
• 175°C Operating Temperature
• Repetitive Avalanche Capability for Robustness and
Reliability
• Lead Free, RoHS Compliant and Halogen Free
• Automotive Qualified *
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and
functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied.Exposure to absolute-
maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured
under board mounted and still air conditions. Ambient temperature (T
A
) is 25°C, unless otherwise specified.
Parameter Units
V
DS
Drain-to-Source Voltage
V
GS
Gate-to-Source Voltage
I
D
@ T
C
= 25°C
Continuous Drain Current, V
GS
@ 10V (Silicon Limited)
f
I
D
@ T
C
= 100°C
Continuous Drain Current, V
GS
@ 10V (Silicon Limited)
f
I
D
@ T
A
= 25°C
Continuous Drain Current, V
GS
@ 10V (Silicon Limited)
e
I
D
@ T
C
= 25°C Continuous Drain Current, V
GS
@ 10V (Package Limited)
I
DM
Pulsed Drain Current
g
P
D
@T
C
= 25°C Power Dissipation
f
P
D
@T
A
= 25°C Power Dissipation
e
E
AS
Single Pulse Avalanche Energy (Thermally Limited)
h
E
AS
(tested)
Single Pulse Avalanche Energy Tested Value
h
I
AR
Avalanche Current
g
A
E
AR
Repetitive Avalanche Energy
g
mJ
T
P
Peak Soldering Temperature
T
J
Operating Junction and
T
STG
Storage Temperature Range
Thermal Resistance
Parameter Typ. Max. Units
R
θJA
Junction-to-Ambient
e
––– 45
R
θJA
Junction-to-Ambient
j
12.5 –––
R
θJA
Junction-to-Ambient
k
20 –––
R
θJCan
Junction-to-Can
fl
––– 1.8
R
θJ-PCB
Junction-to-PCB Mounted ––– 0.5
Linear Derating Factor
f
W/°C
V
A
mJ
°C/W
W
°C
± 20
315
0.56
31
83
3.3
270
-55 to + 175
Max.
156
110
624
386
104
See Fig.18a, 18b, 16, 17
40
Automotive DirectFET
®
Power MOSFET
PD - 96315C
2 www.irf.com
AUIRF7737L2TR/TR1
Surface mounted on 1 in. square Cu
(still air).
Mounted to a PCB with small
clip heatsink (still air)
Mounted on minimum footprint full size
board with metalized back and with small
clip heatsink (still air)
Notes through are on page 10
D
S
G
Static Characteristics @ T
J
= 25°C (unless otherwise stated)
Parameter Min. T
y
p. Max. Units
V
(BR)DSS
Drain-to-Source Breakdown Volta
g
e 40 ––– ––– V
∆
V
(BR)DSS
/
∆
T
J
Breakdown Volta
g
e Temp. Coefficient ––– 0.03 ––– V/°C
R
DS(on)
Static Drain-to-Source On-Resistance
––– 1.5 1.9
mΩ
V
GS(th)
Gate Threshold Volta
g
e
2.0 3.0 4.0
V
∆
V
GS(th)
/
∆
T
J
Gate Threshold Voltage Coefficient ––– -10 ––– mV/°C
gfs Forward Transconductance
100 ––– ––– S
R
G
Gate Resistance ––– 0.6 –––
Ω
I
DSS
Drain-to-Source Leaka
g
e Current
––– ––– 5
––– ––– 250
I
GSS
Gate-to-Source Forward Leaka
g
e
––– ––– 100
Gate-to-Source Reverse Leakage
––– ––– -100
Dynamic Characteristics @ T
J
= 25°C (unless otherwise stated)
Parameter Min. T
y
p. Max. Units
Q
g
Total Gate Char
g
e
––– 89 134
Q
gs1
Pre-Vth Gate-to-Source Charge ––– 18 –––
Q
gs2
Post-Vth Gate-to-Source Charge ––– 8 ––– See Fig.11
Q
gd
Gate-to-Drain ("Miller") Char
g
e
––– 34 –––
Q
godr
Gate Charge Overdrive ––– 29 –––
Q
sw
Switch Charge (Q
gs2
+ Q
gd
)
––– 42 –––
Q
oss
Output Charge ––– 39 ––– nC
t
d(on)
Turn-On Dela
y
Time
––– 12 –––
t
r
Rise Time
––– 19 –––
t
d(off)
Turn-Off Dela
y
Time
––– 22 –––
t
f
Fall Time
––– 14 –––
C
iss
Input Capacitance –––
5469
–––
C
oss
Output Capacitance –––
1193
–––
C
rss
Reverse Transfer Capacitance –––
534
–––
C
oss
Output Capacitance –––
4296
–––
C
oss
Output Capacitance –––
1066
–––
C
oss
eff.
Effective Output Capacitance –––
1615
–––
Diode Characteristics @ T
J
= 25°C (unless otherwise stated)
Parameter Min. Typ. Max. Units
I
S
Continuous Source Current
(Body Diode) A
I
SM
Pulsed Source Current
(Body Diode)
g
V
SD
Diode Forward Voltage ––– ––– 1.3 V
t
rr
Reverse Recovery Time ––– 35 53 ns
Q
rr
Reverse Recovery Charge ––– 32 48 nC
I
F
= 94A, V
DD
= 20V
di/dt = 100A/µs
i
I
S
= 94A, V
GS
= 0V
i
I
D
= 94A
V
DS
= 16V, V
GS
= 0V
V
DD
= 20V, V
GS
= 10V
i
I
D
= 94A
R
G
= 1.8Ω
ƒ = 1.0MHz
V
GS
= 0V, V
DS
= 0V to 32V
Conditions
nA
Conditions
V
GS
= 0V, I
D
= 250µA
Reference to 25°C, I
D
= 1mA
V
GS
= 10V, I
D
= 94A
i
V
DS
= 40V, V
GS
= 0V, T
J
= 125°C
V
GS
= -20V
p-n junction diode.
MOSFET symbol
Conditions
V
GS
= 0V
V
DS
= 25V
showing the
integral reverse
V
GS
= 0V, V
DS
= 1.0V, f=1.0MHz
V
GS
= 0V, V
DS
= 32V, f=1.0MHz
––– –––
156
624
pF
V
DS
= V
GS
, I
D
= 150µA
––– –––
µA
nC
ns
V
DS
= 10V, I
D
= 94A
V
DS
= 20V, V
GS
= 10V
V
GS
= 20V
V
DS
= 40V, V
GS
= 0V
www.irf.com 3
AUIRF7737L2TR/TR1
Qualification standards can be found at International Rectifiers web site: http://www.irf.com
Exceptions to AEC-Q101 requirements are noted in the qualification report.
Qualification Information
†
LARGE-CAN MSL1
Qualification Level
Automotive
(per AEC-Q101)
††
Comments: This part number(s) passed Automotive qualification.
IR’s Industrial and Consumer qualification level is granted by
extension of the higher Automotive level.
Charged Device
Model
N/A
(per AEC-Q101-005)
Moisture Sensitivity Level
RoHS Compliant Yes
ESD
Machine Model Class M4(+/-425V)
(per AEC-Q101-002)
Human Body Model Class H1C(+/-2000V)
(per AEC-Q101-001)
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