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AUIRF7739L2 INFINEON 英飞凌 电子元器件芯片.pdf
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AUIRF7739L2 INFINEON 英飞凌 电子元器件芯片
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AUIRF7739L2TR
Base Part Number Package Type
Standard Pack
Form Quantity
AUIRF7739L2
DirectFET Large Can
Tape and Reel 4000
AUIRF7739L2TR
Orderable Part Number
AUTOMOTIVE GRADE
V
(BR)DSS
40V
R
DS(on)
typ.
700µ
I
D (Silicon Limited)
270A
max.
1000µ
Q
g (typical)
220nC
DirectFET
®
ISOMETRIC
L8
Automotive DirectFET
®
Power MOSFET
Applicable DirectFET
®
Outline and Substrate Outline
SB SC M2 M4 L4 L6 L8
Description
The AUIRF7739L2TR combines the latest Automotive HEXFET® Power MOSFET Silicon technology with the advanced DirectFET® packaging to
achieve the lowest on-state resistance in a package that has the footprint of a DPak (TO-252AA) and only 0.7 mm profile. The DirectFET package is
compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering
techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual
sided cooling to maximize thermal transfer in automotive power systems.
This HEXFET® Power MOSFET is designed for applications where efficiency and power density are essential. The advanced DirectFET® packaging
platform coupled with the latest silicon technology allows the AUIRF7739L2TR to offer substantial system level savings and performance improvement
specifically in motor drive, high frequency DC-DC and other heavy load applications on ICE, HEV and EV platforms. This MOSFET utilizes the latest
processing techniques to achieve low on-resistance and low Qg per silicon area. Additional features of this MOSFET are 175°C operating junction
temperature and high repetitive peak current capability. These features combine to make this MOSFET a highly efficient, robust and reliable device for
high current automotive applications.
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and
functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-
maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under
board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified.
Parameter Max. Units
V
DS
Drain-to-Source Voltage 40
V
V
GS
Gate-to-Source Voltage ±20
I
D
@ T
C
= 25°C Continuous Drain Current, V
GS
@ 10V (Silicon Limited) 270
A
I
D
@ T
C
= 100°C Continuous Drain Current, V
GS
@ 10V (Silicon Limited) 190
I
D
@ T
A
= 25°C Continuous Drain Current, V
GS
@ 10V (Silicon Limited) 46
I
D
@ T
C
= 25°C Continuous Drain Current, V
GS
@ 10V (Package Limited) 375
I
DM
Pulsed Drain Current 1070
P
D
@T
C
= 25°C Power Dissipation 125
W
P
D
@T
A
= 25°C Power Dissipation 3.8
E
AS
Single Pulse Avalanche Energy (Thermally Limited) 270
E
AS (tested)
Single Pulse Avalanche Energy (Tested Value) 160
I
AR
Avalanche Current
See Fig. 16, 17, 18a, 18b
A
E
AR
Repetitive Avalanche Energy
mJ
T
P
Peak Soldering Temperature 270
°C
T
J
Operating Junction and -55 to + 175
T
STG
Storage Temperature Range
mJ
1 2015-11-19
HEXFET® is a registered trademark of Infineon.
*Qualification standards can be found at www.infineon.com
Advanced Process Technology
Optimized for Automotive Motor Drive, DC-DC and
other Heavy Load Applications
Exceptionally Small Footprint and Low Profile
High Power Density
Low Parasitic Parameters
Dual Sided Cooling
175°C Operating Temperature
Repetitive Avalanche Capability for Robustness and Reliability
Lead free, RoHS and Halogen free
Automotive Qualified *
D D
S
S
SS
S
S
S
S
G
AUIRF7739L2TR
2 2015-11-19
Thermal Resistance
Symbol Parameter Typ. Max. Units
R
JA
Junction-to-Ambient ––– 40
R
JA
Junction-to-Ambient 12.5 –––
R
JA
Junction-to-Ambient 20 –––
R
J-Can
Junction-to-Can ––– 1.2
R
J-PCB
Junction-to-PCB Mounted ––– 0.5
Linear Derating Factor 0.83
W/°C
°C/W
Static Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Symbol Parameter Min. Typ. Max. Units Conditions
V
(BR)DSS
Drain-to-Source Breakdown Voltage 40 ––– ––– V V
GS
= 0V, I
D
= 250µA
V
(BR)DSS
/T
J
Breakdown Voltage Temp. Coefficient ––– 0.008 ––– V/°C Reference to 25°C, I
D
= 1.0mA
R
DS(on)
Static Drain-to-Source On-Resistance
––– 700 1000
µ
V
GS
= 10V, I
D
= 160A
V
GS(th)
Gate Threshold Voltage 2.0 2.8 4.0 V
V
DS
= V
GS
, I
D
= 250µA
V
GS(th)
/T
J
Gate Threshold Voltage Coefficient ––– -6.7 ––– mV/°C
gfs Forward Transconductance 280 ––– ––– S V
DS
= 10V, I
D
= 160A
R
G
Internal Gate Resistance ––– 1.5 –––
I
DSS
Drain-to-Source Leakage Current
––– ––– 5.0
µA
V
DS
= 40V, V
GS
= 0V
––– ––– 250 V
DS
= 40V, V
GS
= 0V, T
J
= 125°C
I
GSS
Gate-to-Source Forward Leakage ––– ––– 100
nA
V
GS
= 20V
Gate-to-Source Reverse Leakage ––– ––– -100 V
GS
= -20V
Dynamic Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Symbol Parameter Min. Typ. Max. Units Conditions
Q
g
Total Gate Charge ––– 220 330
nC
V
DS
= 20V
Q
gs1
Gate-to-Source Charge ––– 46 –––
V
GS
= 10V
Q
gs2
Gate-to-Source Charge ––– 19 –––
I
D
= 160A
Q
gd
Gate-to-Drain ("Miller") Charge ––– 81
See Fig.11
Q
godr
Gate Charge Overdrive ––– 74 –––
Q
sw
Switch Charge (Q
gs2
+ Q
gd
) ––– 100 –––
Q
oss
Output Charge ––– 83 –––
nC
V
DS
= 16V, V
GS
= 0V
t
d(on)
Turn-On Delay Time ––– 21 –––
ns
V
DD
= 20V, V
GS
= 10V
t
r
Rise Time ––– 71 –––
I
D
= 160A
t
d(off)
Turn-Off Delay Time ––– 56 –––
R
G
= 1.8
t
f
Fall Time ––– 42 –––
C
iss
Input Capacitance ––– 11880 –––
pF
V
GS
= 0V
C
oss
Output Capacitance ––– 2510 –––
V
DS
= 25V
C
rss
Reverse Transfer Capacitance ––– 1240 –––
ƒ = 1.0 MHz
C
oss
Output Capacitance ––– 8610 ––– V
GS
= 0V, V
DS
= 1.0V, ƒ = 1.0 MHz
C
oss
Output Capacitance ––– 2230 ––– V
GS
= 0V, V
DS
= 32V, ƒ = 1.0 MHz
C
oss eff.
Effective Output Capacitance ––– 3040 ––– V
GS
= 0V, V
DS
= 0V to 32V
Notes through are on page 3
AUIRF7739L2TR
3 2015-11-19
Diode Characteristics
Symbol Parameter Min. Typ. Max. Units Conditions
I
S
Continuous Source Current
––– ––– 110
A
MOSFET symbol
(Body Diode) showing the
I
SM
Pulsed Source Current
––– –––
integral reverse
(Body Diode) p-n junction diode.
V
SD
Diode Forward Voltage ––– ––– 1.3 V T
J
= 25°C, I
S
= 160A, V
GS
= 0V
t
rr
Reverse Recovery Time
––– 87 130
ns
T
J
= 25°C, I
F
= 160A, V
DD
= 20V
Q
rr
Reverse Recovery Charge
––– 250 380
nC
dv/dt = 100A/µs
1070
Surface mounted on 1 in.
square Cu board (still air).
Mounted on minimum
footprint full size board with
metalized back and with small
clip heatsink (still air).
Mounted to a PCB with
small clip heatsink (still air)
Click on this section to link to the appropriate technical paper.
Click on this section to link to the DirectFET
®
Website.
Surface mounted on 1 in. square Cu board, steady state.
T
C
measured with thermocouple mounted to top (Drain) of part.
Repetitive rating; pulse width limited by max. junction temperature.
Starting T
J
= 25°C, L = 0.021mH, R
G
= 25, I
AS
= 160A.
Pulse width 400µs; duty cycle 2%.
Used double sided cooling, mounting pad with large heatsink.
Mounted on minimum footprint full size board with metalized back and with small clip heat sink.
R
is measured at T
J
of approximately 90°C.
D
S
G
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