AUIRF7799L2TR
Base Part Number Package Type
Standard Pack
Form Quantity
AUIRF7799L2
DirectFET Large Can
Tape and Reel 4000
AUIRF7799L2TR
Orderable Part Number
AUTOMOTIVE GRADE
V
(BR)DSS
250V
R
DS(on)
typ.
32m
I
D (Silicon Limited)
35A
max.
38m
Q
g (typical)
110nC
DirectFET
®
ISOMETRIC
L8
Automotive DirectFET
®
Power MOSFET
Applicable DirectFET
®
Outline and Substrate Outline
SB SC M2 M4 L4 L6 L8
Description
The AUIRF7799L2TR combines the latest Automotive HEXFET
®
Power MOSFET Silicon technology with the advanced DirectFET
®
packaging to
achieve the lowest on-state resistance in a package that has the footprint of a DPak (TO-252AA) and only 0.7 mm profile. The DirectFET
®
package is
compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering
techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET
®
package allows dual
sided cooling to maximize thermal transfer in automotive power systems.
This HEXFET
®
Power MOSFET is designed for applications where efficiency and power density are essential. The advanced DirectFET
®
packaging
platform coupled with the latest silicon technology allows the AUIRF7799L2TR to offer substantial system level savings and performance improvement
specifically in motor drive, high frequency DC-DC and other heavy load applications on ICE, HEV and EV platforms. This MOSFET utilizes the latest
processing techniques to achieve low on-resistance and low Qg per silicon area. Additional features of this MOSFET are 175°C operating junction
temperature and high repetitive peak current capability. These features combine to make this MOSFET a highly efficient, robust and reliable device for
high current automotive applications.
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and
functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-
maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under
board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified.
Parameter Max. Units
V
DS
Drain-to-Source Voltage 250
V
V
GS
Gate-to-Source Voltage ±30
I
D
@ T
C
= 25°C Continuous Drain Current, V
GS
@ 10V (Silicon Limited) 35
A
I
D
@ T
C
= 100°C Continuous Drain Current, V
GS
@ 10V (Silicon Limited) 25
I
D
@ T
A
= 25°C Continuous Drain Current, V
GS
@ 10V (Silicon Limited) 6.6
I
D
@ T
C
= 25°C Continuous Drain Current, V
GS
@ 10V (Package Limited) 375
I
DM
Pulsed Drain Current 140
P
D
@T
C
= 25°C Power Dissipation 125
W
P
D
@T
A
= 25°C Power Dissipation 4.3
E
AS
Single Pulse Avalanche Energy (Thermally Limited) 325 mJ
I
AR
Avalanche Current
See Fig. 16, 17, 18a, 18b
A
E
AR
Repetitive Avalanche Energy
mJ
T
P
Peak Soldering Temperature 270
°C
T
J
Operating Junction and -55 to + 175
T
STG
Storage Temperature Range
P
D
@T
C
= 100°C Power Dissipation 63
1 2015-10-5
HEXFET® is a registered trademark of Infineon.
*Qualification standards can be found at www.infineon.com
Advanced Process Technology
Optimized for Automotive Motor Drive, DC-DC and
other Heavy Load Applications
Exceptionally Small Footprint and Low Profile
High Power Density
Low Parasitic Parameters
Dual Sided Cooling
175°C Operating Temperature
Repetitive Avalanche Capability for Robustness and Reliability
Lead free, RoHS and Halogen free
Automotive Qualified *
D D
S
S
SS
S
S
S
S
G
剩余10页未读，继续阅读
资源评论
