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HEXFET
®
Power MOSFET
Notes through are on page 9
Features and Benefits
Applications
• Synchronous MOSFET for high frequency buck converters
PQFN 5X6 mm
Parameter Units
V
DS
Drain-to-Source Voltage
V
Gate-to-Source Voltage
I
@ T
A
= 25°C
Continuous Drain Current, V
GS
@ 10V
I
@ T
A
= 70°C
Continuous Drain Current, V
GS
@ 10V
I
@ T
C(Bottom)
= 25°C
Continuous Drain Current, V
GS
@ 10V
I
@ T
C(Bottom)
= 100°C
Continuous Drain Current, V
GS
@ 10V
I
@ T
C
= 25°C
Continuous Drain Current, V
GS
@ 10V (Package Limited)
I
P
@T
A
= 25°C
P
@T
C(Bottom)
= 25°C
g
T
Operating Junction and
T
Storage Temperature Range
V
W
A
°C
Max.
23
57
hi
200
± 20
30
18
90
hi
50
i
-55 to + 150
3.6
0.029
54
V
DS
30 V
V
gs max
± 20
V
R
DS(on) max
(@V
GS
= 10V)
4.1
(@V
GS
= 4.5V)
6.3
Q
g typ.
14 nC
I
D
(@T
c(Bottom)
= 25°C)
50
i
A
m
Ω
Features Benefits
Low Thermal Resistance to PCB (< 2.3°C/W) Enable better thermal dissipation
Low Profile (<1.2mm) results in Increased Power Density
Industry-Standard Pinout
⇒
Multi-Vendor Compatibility
Compatible with Existing Surface Mount Techniques
Easier Manufacturing
RoHS Compliant Containing no Lead, no Bromide and no Halogen
Environmentally Friendlier
MSL1, Consumer Qualification Increased Reliability
IRFH8324PbF
1 www.irf.com © 2015 International Rectifier Submit Datasheet Feedback June 2, 2015
Note
Form Quantity
IRFH8324TRPBF PQFN 5mm x 6mm Tape and Reel 4000
IRFH8324TR2PBF
PQFN 5mm x 6mm Tape and Reel 400 EOL notice #259
Orderable part number Package Type Standard Pack