IRFH7084INFINEON英飞凌电子元器件芯片.pdf资源-CSDN文库

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StrongIRFET™

IRFH7084PbF

HEXFET

Power MOSFET

Application

 Half-bridge and full-bridge topologies

 Synchronous rectifier applications

 Resonant mode power supplies

 DC/DC converters

 DC/AC Inverters

Benefits

 Improved Gate, Avalanche and Dynamic dV/dt Ruggedness

 Fully Characterized Capacitance and Avalanche SOA

 Enhanced body diode dV/dt and dI/dt Capability

 Lead-Free, RoHS Compliant

DSS

40V

DS(on) typ.

0.95m

max

1.25m

D (Silicon Limited)

265A

D (Package Limited)

100A

Fig 1. Typical On-Resistance vs. Gate Voltage

Fig 2. Maximum Drain Current vs. Case Temperature



PQFN 5X6 mm



Base part number  Package Type 

Standard Pack

Form Quantity

IRFH7084PbF PQFN 5mm x 6mm

Tape and Reel 4000 IRFH7084TRPbF

Orderable Part Number

25 50 75 100 125 150

, Case Temperature (°C)

120

180

240

300

(

)

Limited by package

4 8 12 16 20

, Gate-to-Source Voltage (V)

(

)

(



)

= 25°C

= 125°C

= 100A

2017-01-24



IRFH7084PbF

2017-01-24

Absolute Maximium Rating

Symbol Parameter Max. Units

@ T

= 25°C Continuous Drain Current, V

@ 10V 40

A 

@ T

C(Bottom)

= 25°C Continuous Drain Current, V

@ 10V 265

@ T

C(Bottom)

= 100°C Continuous Drain Current, V

@ 10V 170

@ T

= 25°C Continuous Drain Current, V

@ 10V (Package Limited) 100

Pulsed Drain Current  400 A 

Linear Derating Factor 1.25 W/°C

Gate-to-Source Voltage ± 20 V

STG

Operating Junction and

Storage Temperature Range

-55 to + 150 °C 

Avalanche Characteristics

AS (Thermally limited)

Single Pulse Avalanche Energy 

185

AS (Thermally limited)

Single Pulse Avalanche Energy 

431

Avalanche Current 

See Fig 14, 15, 23a,

Repetitive Avalanche Energy  mJ

Thermal Resistance

Parameter Typ. Max. Units



(Bottom)

Junction-to-Case 

0.5 0.8

°C/W



(Top)

Junction-to-Case

––– 21



Junction-to-Ambient 

––– 35



(<10s)

Junction-to-Ambient 

––– 20

= 25°C Max Power Dissipation 156

Static @ T

= 25°C (unless otherwise specified)

Symbol Parameter Min. Typ. Max. Units Conditions

(BR)DSS

Drain-to-Source Breakdown Voltage 40 ––– ––– V V

= 0V, I

= 250µA

V

(BR)DSS

/T

Breakdown Voltage Temp. Coefficient ––– 0.034 ––– V/°C Reference to 25°C, I

= 1mA

DS(on)

Static Drain-to-Source On-Resistance ––– 0.95 1.25

m

= 10V, I

= 100A 

GS(th)

Gate Threshold Voltage 2.2 ––– 3.9 V V

= V

, I

= 150µA

DSS

Drain-to-Source Leakage Current

––– ––– 1.0

µA

=40 V, V

= 0V

––– ––– 150 V

=40V,V

= 0V,T

=125°C

GSS

Gate-to-Source Forward Leakage ––– ––– 100

= 20V

Gate-to-Source Reverse Leakage ––– ––– -100 V

= -20V

Gate Resistance ––– 1.4 –––



Notes:

Repetitive rating; pulse width limited by max. junction temperature.

 Limited by T

Jmax

, starting T

= 25°C, L = 0.037mH, R

= 50, I

= 100A, V

=10V.

I

 100A, di/dt  994A/µs, V

 V

(BR)DSS

, T

150°C.

Pulse width  400µs; duty cycle  2%.

 C

oss

eff. (TR) is a fixed capacitance that gives the same charging time as C

oss

while V

is rising from 0 to 80% V

DSS

 C

oss

eff. (ER) is a fixed capacitance that gives the same energy as C

oss

while V

is rising from 0 to 80% V

DSS

 R



is measured at T

approximately 90°C.

 Limited by T

Jmax

, starting T

= 25°C, L = 1mH, R

= 50, I

= 29A, V

=10V.

 When mounted on 1 inch square PCB (FR-4). Please refer to AN-994 for more details:

http://www.infineon.com/technical-info/appnotes/an-994.pdf



IRFH7084PbF

2017-01-24

Dynamic Electrical Characteristics @ T

= 25°C (unless otherwise specified)

Symbol Parameter Min. Typ. Max. Units Conditions

gfs Forward Transconductance 120 ––– ––– S V

= 10V, I

=100A

Total Gate Charge ––– 127 190

= 100A

Gate-to-Source Charge ––– 35 ––– V

= 20V

Gate-to-Drain Charge ––– 41 ––– V

= 10V

sync

Total Gate Charge Sync. (Qg– Qgd) ––– 195 –––

d(on)

Turn-On Delay Time ––– 16 –––

= 20V

Rise Time ––– 31 –––

= 30A

d(off)

Turn-Off Delay Time ––– 64 –––

= 2.7

Fall Time ––– 34 –––

= 10V

iss

Input Capacitance ––– 6560 –––

pF 

= 0V

oss

Output Capacitance ––– 940 –––

= 25V

rss

Reverse Transfer Capacitance ––– 650 –––

ƒ = 1.0MHz, See Fig.5

oss eff.(ER)

Effective Output Capacitance (Energy Related) ––– 1120 –––

= 0V, VDS = 0V to 32V

See Fig.11

oss eff.(TR)

Output Capacitance (Time Related) ––– 1300 ––– V

= 0V, VDS = 0V to 32V

Diode Characteristics 

Symbol Parameter Min. Typ. Max. Units Conditions

Continuous Source Current

––– ––– 100

MOSFET symbol

(Body Diode)

showing the

Pulsed Source Current

––– ––– 400

integral reverse

(Body Diode) p-n junction diode.

Diode Forward Voltage ––– ––– 1.3 V T

= 25°C,I

= 100A,V

= 0V 

dv/dt Peak Diode Recovery dv/dt ––– 4.5 ––– V/ns T

= 150°C,I

=100A,V

= 40V

Reverse Recovery Time

––– 36 –––

= 25°C V

= 34V

––– 37 ––– T

= 125°C I

= 100A,

Reverse Recovery Charge

––– 38 –––

= 25°C di/dt = 100A/µs 

––– 40 ––– T

= 125°C 

RRM

Reverse Recovery Current ––– 1.7 ––– A

= 25°C 

nC 

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