HEXFET
®
Power MOSFET
Notes through are on page 2
PQFN
5mm x 6mm
D
D
D
D
S
G
S
S
Applications
• Charge and Discharge Switch for Notebook PC Battery Application
Features and Benefits
Features
Resulting Benefits
Low R
DSon
(≤ 4.6mΩ)
Lower Conduction Losses
Industry-Standard PQFN Package Multi-Vendor Compatibility
RoHS Compliant Containing no Lead, no Bromide and no Halogen Environmentally Friendlier
results in
⇒
6 mm
5 mm
Note
Form Quantit
IRFH9310TRPBF PQFN 5mm x 6mm Ta
e and Reel 4000
Orderable part number Package Type Standard Pack
V
DS
-30 V
R
DS(on) max
(@V
GS
= 10V)
4.6
m
Ω
Q
g (typical)
110
nC
R
G (typical)
2.8
Ω
I
D
(@T
A
= 25°C)
-21 A
Absolute Maximum Ratings
Parameter Units
V
DS
Drain-to-Source Voltage
V
GS
Gate-to-Source Voltage
I
D
@ T
A
= 25°C Continuous Drain Current, V
GS
@ -10V
I
D
@ T
A
= 70°C Continuous Drain Current, V
GS
@ -10V
I
D
@ T
C
= 25°C Continuous Drain Current, V
GS
@ -10V (Silicon Limited)
I
D
@ T
C
= 70°C Continuous Drain Current, V
GS
@ -10V (Silicon Limited)
I
D
@ T
C
= 25°C Continuous Drain Current, V
GS
@ -10V (Package Limited)
I
DM
Pulsed Drain Current
c
P
D
@T
A
= 25°C
Power Dissipation
f
P
D
@ T
A
= 70°C
Power Dissipation
f
Linear Derating Factor W/°C
T
J
Operating Junction and
T
STG
Storage Temperature Range
V
W
A
°C
Max.
-21
- 86
-170
± 20
-30
-17
-107
-40
-55 to + 150
3.1
0.025
2.0
IRFH9310PbF
1 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback August 26, 2014