IRFH8303 英飞凌 infineon 电子元器件芯片.pdf
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StrongIRFET™
IRFH8303PbF
1
2017-01-24
HEXFET
®
Power MOSFET
Base part number Package Type
Standard Pack
Form Quantity
IRFH8303PbF PQFN 5 mm x 6 mm Tape and Reel 4000 IRFH8303TRPbF
Orderable Part Number
V
DSS
30 V
R
DS(on)
max 1.10
m
Qg
(typical)
58 nC
I
D
(@T
C (Bottom)
= 25°C)
100 A
R
G (typical)
1.0 Ω
Notes through are on page 9
Absolute Maximum Ratings
Parameter Max. Units
V
GS
Gate-to-Source Voltage ± 20 V
I
D
@ T
A
= 25°C Continuous Drain Current, V
GS
@ 10V 43
A
I
D
@ T
C(Bottom)
= 25°C Continuous Drain Current, V
GS
@ 10V 280
I
D
@ T
C(Bottom)
= 100°C Continuous Drain Current, V
GS
@ 10V 177
I
DM
Pulsed Drain Current 400
P
D
@T
A
= 25°C Power Dissipation 3.7 W
P
D
@T
C(Bottom)
= 25°C Power Dissipation 156
Linear Derating Factor 0.029 W/°C
T
J
Operating Junction and -55 to + 150 °C
T
STG
Storage Temperature Range
I
D
@ T
C
= 25°C
Continuous Drain Current, V
GS
@ 10V
(Source Bonding Technology Limited)
100
Applications
Control MOSFET for synchronous buck converter
PQFN 5 x 6 mm
Features Benefits
Low Thermal Resistance to PCB (<0.8°C/W)
Enable better Thermal Dissipation
Low Profile (≤ 0.9 mm)
results in
Increased Power Density
Industry-Standard Pinout
Multi-Vendor Compatibility
Compatible with Existing Surface Mount Techniques
Easier Manufacturing
RoHS Compliant, Halogen-Free
Environmentally Friendlier
MSL1, Industrial Qualification
Increased Reliability
100% Rg Tested
Increased Reliability
Low R
DS(ON)
(≤ 1.10 m)
Lower Conduction Losses
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