BSZ0902NSI 英飞凌 infineon 电子元器件芯片 (1).pdf
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BSZ0902NSI
OptiMOS
TM
Power-MOSFET
Features
• Optimized SyncFET for high performance buck converter
• Integrated monolithic Schottky-like diode
• Very low on-resistance R
DS(on)
@ V
GS
=4.5 V
• 100% avalanche tested
• Superior thermal resistance
• N-channel
• Qualified according to JEDEC
1)
for target applications
• Pb-free lead plating; RoHS compliant
• Halogen-free according to IEC61249-2-21
Maximum ratings, at T
j
=25 °C, unless otherwise specified
Parameter Symbol Conditions Unit
Continuous drain current
I
D
V
GS
=10 V, T
C
=25 °C
40 A
V
GS
=10 V, T
C
=100 °C
40
V
GS
=4.5 V, T
C
=25 °C
40
V
GS
=4.5 V,
T
C
=100 °C
40
V
GS
=10 V, T
A
=25 °C,
R
thJA
=60 K/W
2)
21
Pulsed drain current
3)
I
D,pulse
T
C
=25 °C
160
Avalanche current, single pulse
4)
I
AS
T
C
=25 °C
20
Avalanche energy, single pulse
E
AS
I
D
=20 A, R
GS
=25 W
30 mJ
Gate source voltage
V
GS
±20 V
Value
1)
J-STD20 and JESD22
2)
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
Type
Package
Marking
BSZ0902NSI
PG-TSDSON-8 (fused leads)
0902NSI
PG-TSDSON-8 (fused leads)
V
DS
30
V
R
DS(on),max
2.8
mW
I
D
40
A
Q
OSS
17
nC
Q
G
(0V..10V)
24
nC
Product Summary
Rev. 2.1 page 1 2013-05-13
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