SMHS566B − JUNE 1997 − REVISED APRIL 1998
5
POST OFFICE BOX 1443 • HOUSTON, TEXAS 77251−1443
operation
dual xCAS
Two xCAS pins (LCAS and UCAS) are provided to give independent byte control of the 16 data I/O pins
(DQ0−DQ15), with LCAS
corresponding to DQ0−DQ7 and UCAS corresponding to DQ8−DQ15. Each xCAS
going low enables its corresponding DQx pins.
In write cycles, data-in setup and hold times (t
DS
and t
DH
), and write-command setup and hold times (t
WCS
, t
CWL
,
and t
WCH
) must be satisfied for each individual xCAS to ensure writing into the storage cells of the corresponding
DQ pins.
extended data out
Extended data out (EDO) allows for data output rates of up to 50 MHz for 50-ns devices. When keeping the same
row address while selecting random column addresses, the time for row-address setup and hold and address
multiplex is eliminated. The maximum number of columns that can be accessed is determined by t
RASP
, the
maximum RAS
low time.
EDO does not enter the DQs into the high-impedance state with the rising edge of xCAS
. The output remains
valid for the system to latch the data. After xCAS
goes high, the DRAM decodes the next address. OE and W
can be used to control the output impedance. Descriptions of OE and W further explain the benefit of EDO
operation.
address: A0−A11 (TMS465169, TMS465169P)
Twenty-two address bits are required to decode each of the 4194304 storage cell locations. For the
TMS465169 and TMS465169P, 12 row-address bits are set up on A0−A11 and latched on the chip by RAS
.
Ten column-address bits are set up on A0−A9 and latched on the chip by the first xCAS
. All addresses must
be stable on or before the falling edge of RAS
and xCAS. RAS is similar to a chip-enable in that it activates the
sense amplifiers as well as the row decoder. xCAS
is used as a chip-select, activating its corresponding output
buffer and latching the address bits into the column-address buffers.
To latch in a new column address, both xCAS
pins must be brought high. The column-precharge time (see
parameter t
CP
) is measured from the last xCAS rising edge to the first xCAS falling edge of the new cycle.
write enable (W
)
The read or write mode is selected through W
. A logic high on W selects the read mode and a logic low selects
the write mode. The data input is disabled when the read mode is selected. When W
goes low prior to xCAS
(early write), data out remains in the high-impedance state for the entire cycle, permitting a write operation
independent of the state of OE
. This permits early-write operations to be completed with OE grounded. If W goes
low in an EDO read cycle, the DQ pins go into the high-impedance state as long as xCAS
is high.
data in (DQ0−DQ15)
Data is written during a write or read-modify-write cycle. Depending on the mode of operation, the falling edge
of xCAS
or W strobes data into the on-chip data latch. In an early-write cycle, W is brought low prior to an xCAS
falling edge, and data is strobed into the on-chip data latch for the corresponding DQ pins with setup and hold
times referenced to this xCAS
signal.
In a delayed-write or read-modify-write cycle, xCAS
is already low and data is strobed in by W with setup and
hold times referenced to this signal. In this cycle, OE
must be high to bring the output buffers to the
high-impedance state prior to impressing data on the I/O lines (see parameter t
OED
).
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