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TI-INA148-Q1.pdf
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TI-INA148-Q1.pdf
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Output Voltage (V)
Common Mode Voltage (V)
-20 -15 -10 -5 0 5 10 15 20
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An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.
INA148-Q1
SBOS472B –MARCH 2009–REVISED JUNE 2016
INA148-Q1 ±200-V Common-Mode Voltage Difference Amplifier
1
1 Features
1
• Qualified for Automotive Applications
• AEC-Q100 Qualified With the Following Results:
– Device Temperature Grade 1: –40°C to 125°C
Ambient Operating Temperature Range
– Device HBM ESD Classification Level 1C
– Device CDM ESD Classification Level C6
– Device MM ESD Classification Level M2
• High Common-Mode Voltage
– 75 V at V
S
= 5 V
– ±200 V at V
S
= ±15 V
• Fixed Differential Gain = 1 V/V
• Low Quiescent Current: 260 µA
• Wide Supply Range
– Single Supply: 2.7 V to 36 V
– Dual Supplies: ±1.35 V to ±18 V
• Low Gain Error: 0.075% (Maximum)
• Low Nonlinearity: 0.002% (Maximum)
• High CMR: 86 dB
• Surface-Mount 8-pin SOIC Package
2 Applications
• HEV/EV and Powertrain
• HEV Battery Management
• Automotive Instrumentation
• Current-Shunt Measurements
• Differential Sensor Amplifiers
• Line Receivers
• Battery-Powered Systems
• Stacked-Cell Monitors
3 Description
The INA148-Q1 is a precision, low-power, unity-gain
difference amplifier with a high common-mode input
voltage range. The device consists of a monolithic,
precision, bipolar operational amplifier with a thin-film
resistor network.
The on-chip resistors are laser trimmed for an
accurate 1-V/V differential gain and high common-
mode rejection. Excellent temperature tracking of the
resistor network maintains high gain accuracy and
common-mode rejection over temperature. The
INA148-Q1 operates on single or dual supplies.
These features make the INA148-Q1 suitable for
HEV/EV and Powertrain applications, specifically in
battery management systems.
The INA148-Q1 is available in an 8-pin SOIC,
surface-mount package, and is specified for operation
over the temperature range of –40°C to 125°C.
Device Information
(1)
PART NUMBER PACKAGE BODY SIZE (NOM)
INA148-Q1 SOIC (8) 3.91 mm × 4.90 mm
(1) For all available packages, see the orderable addendum at
the end of the data sheet.
.
Input Common-Mode Voltage vs Output Voltage
2
INA148-Q1
SBOS472B –MARCH 2009–REVISED JUNE 2016
www.ti.com
Product Folder Links: INA148-Q1
Submit Documentation Feedback Copyright © 2009–2016, Texas Instruments Incorporated
Table of Contents
1 Features.................................................................. 1
2 Applications ........................................................... 1
3 Description ............................................................. 1
4 Revision History..................................................... 2
5 Pin Configuration and Functions......................... 3
6 Specifications......................................................... 3
6.1 Absolute Maximum Ratings ...................................... 3
6.2 ESD Ratings.............................................................. 3
6.3 Recommended Operating Conditions....................... 4
6.4 Thermal Information.................................................. 4
6.5 Electrical Characteristics Dual Supply ...................... 4
6.6 Electrical Characteristics Single Supply.................... 5
6.7 Typical Characteristics.............................................. 6
7 Detailed Description............................................ 10
7.1 Overview ................................................................. 10
7.2 Functional Block Diagram ....................................... 10
7.3 Feature Description................................................. 10
7.4 Device Functional Modes........................................ 13
8 Application and Implementation ........................ 14
8.1 Application Information............................................ 14
8.2 Typical Applications ................................................ 14
9 Power Supply Recommendations...................... 19
10 Layout................................................................... 19
10.1 Layout Guidelines ................................................. 19
10.2 Layout Example .................................................... 19
11 Device and Documentation Support ................. 20
11.1 Community Resources.......................................... 20
11.2 Trademarks ........................................................... 20
11.3 Electrostatic Discharge Caution............................ 20
11.4 Glossary ................................................................ 20
12 Mechanical, Packaging, and Orderable
Information ........................................................... 20
4 Revision History
NOTE: Page numbers for previous revisions may differ from page numbers in the current version.
Changes from Revision A (October 2011) to Revision B Page
• Added Device Information table, Table of Contents, Pin Configuration and Functions section, Specifications section,
ESD Ratings table, Thermal Information table, Detailed Description section, Application and Implementation section,
Power Supply Recommendations section, Layout section, Device and Documentation Support section, and
Mechanical, Packaging, and Orderable Information section.................................................................................................. 1
• Deleted Ordering Information Table; see POA at the end of the datasheet .......................................................................... 1
Changes from Original (March 2009) to Revision A Page
• Features Bullet From: Low Quiescent Current: 260 mA To: Low Quiescent Current: 260 µA .............................................. 1
Not to scale
1REF 8 NC
2–IN 7 V+
3+IN 6 OUT
4V– 5 NC
3
INA148-Q1
www.ti.com
SBOS472B –MARCH 2009–REVISED JUNE 2016
Product Folder Links: INA148-Q1
Submit Documentation FeedbackCopyright © 2009–2016, Texas Instruments Incorporated
5 Pin Configuration and Functions
D Package
8-Pin SOIC
Top View
Pin Functions
PIN
I/O DESCRIPTION
NAME NO.
+IN 3 I Noninverting input
–IN 2 I Inverting input
NC 5, 8 — No connection
OUT 6 O Output voltage
REF 1 I Reference voltage input
V+ 7 I Positive supply voltage
V– 4 I Negative supply voltage
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings
only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended
Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
6 Specifications
6.1 Absolute Maximum Ratings
over operating free-air temperature range (unless otherwise noted)
(1)
MIN MAX UNIT
Supply voltage V+ to V– 36 V
Input voltage
Continuous ±200
V
Peak (0.1 s) ±500
Short circuit to ground duration Continuous
Package thermal impedance, junction to free air 97.1 °C/W
Operating free-air temperature –40 125 °C
Maximum operating virtual-junction temperature 150 °C
Lead temperature (soldering, 10 s) 300 °C
Storage temperature, T
stg
–65 150 °C
(1) AEC Q100-002 indicates that HBM stressing shall be in accordance with the ANSI/ESDA/JEDEC JS-001 specification.
6.2 ESD Ratings
VALUE UNIT
V
(ESD)
Electrostatic discharge
Human-body model (HBM), per AEC Q100-002
(1)
±1500
VCharged-device model (CDM), per AEC Q100-011 ±2000
Machine model ±150
4
INA148-Q1
SBOS472B –MARCH 2009–REVISED JUNE 2016
www.ti.com
Product Folder Links: INA148-Q1
Submit Documentation Feedback Copyright © 2009–2016, Texas Instruments Incorporated
6.3 Recommended Operating Conditions
over operating free-air temperature range (unless otherwise noted)
MIN MAX UNIT
V
S
Supply voltage
Single supply 2.7 36
V
Dual supply ±1.35 ±18
T
A
Operating free-air temperature –40 125 °C
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application
report, SPRA953.
6.4 Thermal Information
THERMAL METRIC
(1)
INA148-Q1
UNITD (SOIC)
8 PINS
R
θJA
Junction-to-ambient thermal resistance 100.6 °C/W
R
θJC(top)
Junction-to-case (top) thermal resistance 44.9 °C/W
R
θJB
Junction-to-board thermal resistance 42.2 °C/W
ψ
JT
Junction-to-top characterization parameter 6.3 °C/W
ψ
JB
Junction-to-board characterization parameter 41.5 °C/W
(1) Overall difference amplifier configuration. Referred to input pins (V
+IN
and V
–IN
), gain = 1 V/V.
(2) Includes effects of amplifier's input bias and offset currents.
(3) Includes effects of input current noise and thermal noise contribution of resistor network.
6.5 Electrical Characteristics Dual Supply
V
S
= ±5 V to ±15 V (dual supply), R
L
= 10 k Ω to ground, V
REF
= 0 V, T
A
= 25°C (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
V
OS
Input offset voltage
(1)(2)
V
CM
= 0 V
V
S
= ±15 V ±1 ±5
mV
V
S
= ±5 V ±1 ±5
ΔV
OS
/ΔT Input offset voltage drift
(1)
T
A
= –40°C to 125°C ±10 μV/°C
PSRR Power supply ripple rejection
(1)
V
S
= ±1.35 V to ±18 V, V
CM
= 0 V ±50 ±400 μV/V
V
CM
Common-mode voltage range V
+IN
– V
–IN
= 0
V
S
= ±15 V –200 200
V
V
S
= ±5 V –100 80
CMRR Common-mode rejection ratio
V
S
= ±15 V, V
CM
= –200 V to 200 V, R
S
= 0 Ω 70 86
dB
V
S
= ±5 V, V
CM
= –100 V to 80 V, R
S
= 0 Ω 70 86
Differential input impedance 2 MΩ
Common-mode input impedance 1 MΩ
V
n
Voltage noise
(1)(3)
f = 0.1 Hz to 10 Hz 17 μV
p-p
Voltage noise density
(1)(3)
f = 1 kHz 880 nV/√Hz
Initial gain
(1)
1 V/V
Gain error V
O
= (V– + 0.5) to (V+ – 1.5) ±0.01% ±0.075%
Gain error over temperature ±3 ±10 ppm/°C
Gain nonlinearity V
O
= (V– + 0.5) to (V+ – 1.5)
V
S
= ±15 V ±0.001 ±0.002
%FSR
V
S
= ±5 V ±0.001
Small-signal bandwidth
frequency response
100 kHz
SR Slew rate 1 V/μs
t
s
Settling time
V
S
= ±15 V, 10-V step
0.1% 21
μs
0.01% 25
V
S
= ±5 V, 6-V step
0.1% 21
0.01% 25
Overload recovery 50% input overload 24 μs
5
INA148-Q1
www.ti.com
SBOS472B –MARCH 2009–REVISED JUNE 2016
Product Folder Links: INA148-Q1
Submit Documentation FeedbackCopyright © 2009–2016, Texas Instruments Incorporated
Electrical Characteristics Dual Supply (continued)
V
S
= ±5 V to ±15 V (dual supply), R
L
= 10 k Ω to ground, V
REF
= 0 V, T
A
= 25°C (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
V
O
Output voltage
R
L
= 100 kΩ V– + 0.25 V+ – 1
V
R
L
= 10 kΩ V– + 0.5 V+ – 1.5
I
O
Output current Short-circuit current, continuous to common ±13 mA
C
L
Load capacitance Stable operation 10 nF
I
S
Supply current V
IN
= 0, I
O
= 0 ±260 ±300 μA
(1) Overall difference amplifier configuration. Referred to input pins (V
+IN
and V
–IN
), gain = 1 V/V.
(2) Includes effects of amplifier's input bias and offset currents.
(3) Includes effects of input current noise and thermal noise contribution of resistor network.
6.6 Electrical Characteristics Single Supply
V
S
= 5 V (single supply), R
L
= 10 kΩ to V
S
/ 2, V
REF
= V
S
/ 2, T
A
= 25°C (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
V
OS
Input offset voltage
(1)(2)
V
CM
= V
S
/ 2 ±1 ±5 mV
ΔV
OS
/ΔT Input offset voltage drift
(1)
T
A
= –40°C to 125°C ±10 μV/°C
PSRR Power supply ripple rejection
(1)
V
S
= 2.7 V to 36 V, V
CM
= V
S
/ 2 ±50 ±400 μV/V
V
CM
Common-mode voltage range V
+IN
– V
–IN
= 0
V
REF
= 0.25 V –4 75
V
V
REF
= V
S
/ 2 –47.5 32.5
CMRR Common-mode rejection ratio V
CM
= –47.5 V to 32.5 V, R
S
= 0 Ω 70 86 dB
Differential input impedance 2 MΩ
Common-mode input impedance 1 MΩ
V
n
Voltage noise
(1)(3)
f = 0.1 Hz to 10 Hz 17 μV
p-p
Voltage noise density
(1)(3)
f = 1 kHz 880 nV/√Hz
Initial gain
(1)
1 V/V
Gain error V
O
= 0.5 V to 3.5 V ±0.01% ±0.075%
Gain error over temperature ±3 ±10 ppm/°C
Gain nonlinearity V
O
= 0.5 V to 3.5 V ±0.001 %FSR
Small-signal bandwidth 100 kHz
SR Slew rate 1 V/μs
t
s
Settling time V
S
= 5 V, 3-V step
0.1% 21
μs
0.01% 25
Overload recovery 50% input overload 13 μs
V
O
Output voltage
R
L
= 100 kΩ V– + 0.25 V+ – 1
V
R
L
= 10 kΩ V– + 0.5 V+ – 1.5
I
O
Output current Short-circuit current, continuous to common ±8 mA
C
L
Load capacitance Stable operation 10 nF
I
Q
Quiescent current V
IN
= 0, I
O
= 0 260 300 μA
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