TI-LM7481-Q1.pdf

具有有源整流和负载突降保护功能的 LM7481-Q1 理想二极管控制器

1 特性

• 符合面向汽车应用的 AEC-Q100 标准

– 器件温度等级 1：

–40°C 至 +125°C 环境工作温度范围

– 器件 HBM ESD 分类等级 2

– 器件 CDM ESD 分类等级 C4B

• 3V 至 65V 输入范围

• 反向输入保护低至 –65V

• 2.6A 峰值 DGATE 关断电流

• 集成 3.8mA 电荷泵

• 可调节过压保护

• 2.87µA 低关断电流（EN/UVLO = 低电平）

• 2.6A 峰值 DGATE 关断电流

• 采用合适的 TVS 二极管，符合汽车 ISO7637 瞬态

要求

• 采用节省空间的 12 引脚 WSON 封装

2 应用

• 汽车电池保护

3 说明

LM74810-Q1 理想二极管控制器可驱动和控制外部背

入电源电压可保护和控制 12V 和 24V 汽车类电池供电

的 ECU。该器件可以承受并保护负载免受低至 –65V

的负电源电压的影响。集成的理想二极管控制器

(DGATE) 可驱动第一个 MOSFET 来代替肖特基二极

管，以实现反向输入保护和输出电压保持。具有 60mA

峰值栅极拉电流驱动器级以及短导通和关断延迟时间的

3.8mA 强电荷泵可确保快速的瞬态响应，从而确保在

汽车测试（如 ISO16750 或 LV124）期间实现稳健、

入信号。在电源路径中使用了第二个 MOSFET 的情况

封装尺寸（标称值）

(1) 如需了解所有可用封装，请参阅数据表末尾的可订购产品附

具有开关输出的理想二极管

ISO16750、LV124 交流叠加性能

1 特性................................................................................... 1

2 应用................................................................................... 1

3 说明................................................................................... 1

4 Revision History.............................................................. 2

5 Pin Configuration and Functions...................................3

6.6 Switching Characteristics ...........................................6

6.7 Typical Characteristics................................................ 8

7 Parameter Measurement Information.......................... 11

8 Detailed Description......................................................12

8.1 Overview................................................................... 12

8.2 Functional Block Diagram......................................... 12

8.3 Feature Description...................................................13

8.4 Device Functional Modes..........................................16

8.5 Application Examples................................................17

9 Application and Implementation.................................. 18

10.2 TVS Selection for 12-V Battery Systems................ 28

10.3 TVS Selection for 24-V Battery Systems................ 28

11 Layout...........................................................................29

11.1 Layout Guidelines................................................... 29

11.2 Layout Example...................................................... 29

12 Device and Documentation Support..........................30

12.1 Receiving Notification of Documentation Updates..30

12.2 Support Resources................................................. 30

12.3 Trademarks.............................................................30

12.4 Electrostatic Discharge Caution..............................30

• 更新了整个文档的表、图和交叉参考的编号格式................................................................................................ 1

• 将状态从“预告信息”更改为“量产数据”....................................................................................................... 1

2

5 Pin Configuration and Functions

6 Specifications

–0.3

–0.3

HGATE to OUT

–0.3

15

Output to Input Pins C to A

–5

85

Operating junction temperature, T

–40

Recommended Operating Condition. Exposure to absolute-maximum-rated conditions for extended periods may affect device

reliability.

(2) High junction temperatures degrade operating lifetimes. Operating lifetime is de-rated for junction temperatures greater than 125°C.

V

Electrostatic discharge

Human body model (HBM), per AEC Q100-002

±2000

V

Corner pins (DGATE, OV, and C) ±750

Input Pins

A to GND

VS to GND 0 65 V

EN/UVLO to GND 0 65 V

External

Capacitanc

e

CAP to A, VS to GND, A to GND 0.1 µF

4

over operating free-air temperature range (unless otherwise noted)

Tj Operating Junction temperature

150 °C

(1) Recommended Operating Conditions are conditions under which the device is intended to be functional. For specifications and test

conditions, see Electrical Characteristics.

(2) High junction temperatures degrade operating lifetimes. Operating lifetime is de-rated for junction temperatures greater than 125°C.

R

Junction-to-case (top) thermal resistance 48 °C/W

R

Junction-to-board thermal resistance 31.5 °C/W

Ψ

Junction-to-top characterization parameter 1.2 °C/W

Ψ

Junction-to-board characterization parameter 31.4 °C/W

V

V

Operating input voltage 3 65 V

V

VS POR threshold, rising 2.4 2.6 2.85 V

= 2 V 396 µA

= V

= 24 V, V

= 2 V 408 480 µA

I

I

leakage current during Reverse

Polarity,

≤ – 65 V

V

EN/UVLO threshold voltage, rising 1.195 1.231 1.267 V

V

EN/UVLO threshold voltage, falling 1.091 1.132 1.159 V

V

Enable threshold voltage for low Iq

shutdown, falling

V

Enable Hysteresis 37 72 95 mV

R

Battery sensing disconnect switch

resistance

V

Overvoltage threshold input, rising 1.195 1.231 1.267 V

V

Overvoltage threshold input, falling 1.091 1.13 1.159 V