IPG20N10S4L-35
OptiMOS™-T2 Power-Transistor
Features
• Dual N-channel Logic Level - Enhancement mode
• AEC Q101 qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Green Product (RoHS compliant)
• 100% Avalanche tested
Maximum ratings, at T
j
=25 °C, unless otherwise specified
Parameter Symbol Conditions Unit
Continuous drain current
one channel active
I
D
T
C
=25 °C, V
GS
=10 V
1)
20 A
T
C
=100 °C,
V
GS
=10 V
2)
17
Pulsed drain current
2)
one channel active
I
D,pulse
-
80
Avalanche energy, single pulse
2, 4)
E
AS
I
D
=10A
60 mJ
Avalanche current, single pulse
4)
I
AS
-
15 A
Gate source voltage
V
GS
- ±16 V
Power dissipation
one channel active
P
tot
T
C
=25 °C
43 W
Operating and storage temperature
T
j
, T
stg
- -55 ... +175 °C
Value
V
DS
100
V
R
DS(on),max
4)
35
mW
I
D
20 A
Product Summary
Type Package Marking
IPG20N10S4L-35 PG-TDSON-8-4 4N10L35
PG-TDSON-8-4
Rev. 1.1 page 1 2012-05-15
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