IPG16N10S4L-61A
OptiMOS™-T2 Power-Transistor
Features
• Dual N-channel Logic Level - Enhancement mode
• AEC Q101 qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Green Product (RoHS compliant)
• 100% Avalanche tested
• Feasible for automatic optical inspection (AOI)
Maximum ratings, at T
j
=25 °C, unless otherwise specified
Parameter Symbol Conditions Unit
Continuous drain current
one channel active
I
D
T
C
=25 °C, V
GS
=10 V
16 A
T
C
=100 °C,
V
GS
=10 V
1)
11
Pulsed drain current
1)
one channel active
I
D,pulse
-
64
Avalanche energy, single pulse
1, 3)
E
AS
I
D
=8A
33 mJ
Avalanche current, single pulse
3)
I
AS
-
10 A
Gate source voltage
V
GS
- ±16 V
Power dissipation
one channel active
P
tot
T
C
=25 °C
29 W
Operating and storage temperature
T
j
, T
stg
- -55 ... +175 °C
Value
V
DS
100 V
R
DS(on),max
3)
61
mW
I
D
16 A
Product Summary
Type Package Marking
IPG16N10S4L-61A PG-TDSON-8-10 4N10L61
PG-TDSON-8-10
Rev. 1.0
page 1 2014-06-30
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