IPG20N10S4L-22A
OptiMOS™-T2 Power-Transistor
Features
• Dual N-channel Logic Level - Enhancement mode
• AEC Q101 qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Green Product (RoHS compliant)
• 100% Avalanche tested
• Feasible for automatic optical inspection (AOI)
Maximum ratings, at T
j
=25 °C, unless otherwise specified
Parameter Symbol Conditions Unit
Continuous drain current
one channel active
1)
I
D
T
C
=25°C, V
GS
=10V
20 A
T
C
=100°C, V
GS
=10V
2)
20
Pulsed drain current
2)
one channel active
I
D,pulse
-
80
Avalanche energy, single pulse
2, 4)
E
AS
I
D
=10A
130 mJ
Avalanche current, single pulse
4)
I
AS
-
15 A
Gate source voltage
V
GS
-±16V
Power dissipation
one channel active
P
tot
T
C
=25°C
60 W
Operating and storage temperature
T
j
, T
stg
- -55 ... +175 °C
Value
V
DS
100 V
R
DS(on),max
4)
22
mΩ
I
D
20 A
Product Summary
Type Package Marking
IPG20N10S4L-22A PG-TDSON-8-10 4N10L22
PG-TDSON-8-10
R
ev. 1.0 page 1 2013-03-04
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