IPG20N06S2L-50 INFINEON 英飞凌 电子元器件芯片.pdf
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IPG20N06S2L-50
OptiMOS
®
Power-Transistor
Features
• Dual N-channel Logic Level - Enhancement mode
• AEC Q101 qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Green Product (RoHS compliant)
• 100% Avalanche tested
Maximum ratings, at T
j
=25 °C, unless otherwise specified
Parameter Symbol Conditions Unit
Continuous drain current
one channel active
2)
I
D
T
C
=25 °C, V
GS
=10 V
1)
20 A
T
C
=100 °C, V
GS
=10 V
16
Pulsed drain current
2)
one channel active
I
D,pulse
-
80
Avalanche energy, single pulse
2, 4)
E
AS
I
D
=10A
60 mJ
Avalanche current, single pulse
4)
I
AS
-
15 A
Gate source voltage
V
GS
- ±20 V
Power dissipation
one channel active
P
tot
T
C
=25 °C
51 W
Operating and storage temperature
T
j
, T
stg
- -55 ... +175 °C
IEC climatic category; DIN IEC 68-1 - - 55/175/56
Value
V
DS
55 V
R
DS
(
on
)
,max
4)
50
mΩ
I
D
20 A
Product Summary
Type Package Marking
IPG20N06S2L-50 PG-TDSON-8-4 2N06L50
PG-TDSON-8-4
Rev. 1.0 page 1 2009-09-07
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