IPB80N03S4L03ATMA1 INFINEON 英飞凌 电子元器件芯片.pdf
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IPB80N03S4L-03
IPI80N03S4L-04, IPP80N03S4L-04
OptiMOS
®
-T2 Power-Transistor
Features
• N-channel - Enhancement mode
• Automotive AEC Q101 qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Green product (RoHS compliant)
• 100% Avalanche tested
Maximum ratings, at T
j
=25 °C, unless otherwise specified
Parameter Symbol Conditions Unit
Continuous drain current
1)
I
D
T
C
=25 °C, V
GS
=10 V
80 A
T
C
=100 °C,
V
GS
=10 V
2)
80
Pulsed drain current
2)
I
D,pulse
T
C
=25 °C
320
Avalanche energy, single pulse
E
AS
I
D
=80 A
95 mJ
Avalanche current, single pulse
I
AS
T
C
=25 °C
80 A
Gate source voltage
V
GS
- ±16 V
Power dissipation
P
tot
T
C
=25 °C
94 W
Operating and storage temperature
T
j
, T
stg
- -55 ... +175 °C
IEC climatic category; DIN IEC 68-1 - - 55/175/56
Value
V
DS
30 V
R
DS(on),max
(SMD version) 3.4
mΩ
I
D
80 A
Product Summary
Type Package Marking
IPB80N03S4L-03 PG-TO263-3-2 4N03L03
IPI80N03S4L-04 PG-TO262-3-1 4N03L04
IPP80N03S4L-04 PG-TO220-3-1 4N03L04
PG-TO220-3-1PG-TO262-3-1PG-TO263-3-2
Rev. 2.1 page 1 2010-03-08
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