Features
• Optimized for high performance SMPS
• Integrated monolithic Schottky-like diode
• Very low on-resistance R
DS(on)
@ V
GS
=4.5 V
• 100% avalanche tested
• Superior thermal resistance
• N-channel
• Qualified according to JEDEC
1)
for target applications
• Pb-free lead plating; RoHS compliant
• Halogen-free according to IEC61249-2-21
Maximum ratings, at T
j
=25 °C, unless otherwise specified
Parameter Symbol Conditions Unit
Continuous drain current
I
D
V
GS
=10 V, T
C
=25 °C
100 A
V
GS
=10 V, T
A
=25 °C,
R
thJA
=50 K/W
2)
Pulsed drain current
3)
I
D,pulse
T
C
=25 °C
400
Avalanche current, single pulse
4)
I
AS
T
C
=25 °C
50
Avalanche energy, single pulse
E
AS
I
D
=50 A, R
GS
=25 W
100 mJ
2)
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
Rev. 2.2 page 1 2013-05-14