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BSC024NE2LS INFINEON 英飞凌 电子元器件芯片.pdf
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BSC024NE2LS INFINEON 英飞凌 电子元器件芯片
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Industrial & Multimarket
Data Sheet
2.1, 2011-09-20
Final
OptiMOS™
BSC024NE2LS
n-Channel Power MOSFET
OptiMOS™ Power-MOSFET
BSC024NE2LS
Final Data Sheet 1 2.1, 2011-09-20
1 Description
OptiMOS™25V products are class leading power MOSFETs for highest power
density and energy efficient solutions. Ultra low gate- and output charges together
with lowest on state resistance in small footprint packages make OptiMOS™ 25V
the best choice for the demanding requirements of voltage regulator solutions in
Servers, Datacom and Telecom applications. Super fast switching Control FETs
together with low EMI Sync FETs provide solutions that are easy to design in.
OptiMOS™ products are available in high performancepackages to tackle your
most challenging applications giving full flexibility in optimizing space, efficiency
and cost. OptiMOS™ products are designed to meet and exceed the energy
efficiency and power density requirements of the sharpened next generation
voltage regulation standards in computing applications.
Features
• Optimized for high performance buck converters
• 100% avalanche tested
• Very low on-resistance R
DS(on)
@ V
GS
=4.5 V
• N-channel
• Qualified according to JEDEC
1)
for target applications
• Superior thermal resistance
• Pb-free plating; RoHS compliant
• Halogen-free according to IEC61249-2-21
Applications
• On board power for server
• Power managment for high performance computing
• Synchronous rectification
• High power density point of load converters
1) J-STD20 and JESD22
Table 1 Key Performance Parameters
Parameter Value Unit Related Links
V
DS
25 V IFX OptiMOS webpage
R
DS(on),max
2.4 mΩ IFX OptiMOS product brief
I
D
100 A IFX OptiMOS spice models
Q
OSS
13 nC IFX Design tools
Q
g
.
typ
23
Type Package Marking
BSC024NE2LS PG-TDSON-8 024NE2LS
OptiMOS™ Power-MOSFET
BSC024NE2LS
Final Data Sheet 2 2.1, 2011-09-20
2 Maximum ratings
at T
j
= 25 °C, unless otherwise specified.
3 Thermal characteristics
Table 2 Maximum ratings
Parameter Symbol Values Unit Note / Test Condition
Min. Typ. Max.
Continuous drain current I
D
--100 AV
GS
=10 V, T
C
=25 °C
--70 V
GS
=10 V, T
C
=100 °C
--93 V
GS
=4.5 V, T
C
=25 °C
--59 V
GS
=4.5 V, T
C
=100 °C
--25 V
GS
=10 V, T
A
=25 °C,
R
thJA
=50 K/W
1)
)
1) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm
2
(one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
Pulsed drain current
2)
2) See figure 3 for more detailed information
I
D,pulse
--400 T
C
=25 °C
Avalanche current, single pulse
3)
3) See figure 13 for more detailed information
I
AS
--50
Avalanche energy, single pulse E
AS
--40 mJI
D
=40 A,R
GS
=25 Ω
Gate source voltage V
GS
-20 - 20 V
Power dissipation P
tot
--48 WT
C
=25 °C
--2.5 T
A
=25 °C, R
thJA
=50 K/W
1)
)
Operating and storage temperature T
j
,T
stg
-55 - 150 °C
IEC climatic category; DIN IEC 68-1 55/150/56
Table 3 Thermal characteristics
Parameter Symbol Values Unit Note /
Test Condition
Min. Typ. Max.
Thermal resistance, junction - case
R
thJC
--2.6K/W
--20 top
Device on PCB
R
thJA
--50 6 cm
2
cooling area
1)
1) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm
2
(one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air
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