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TI-HD3SS212.pdf
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Dx_SEL
HPDA
HPDB
VDD
OE
GND
AUXA (p)
AUXA (n)
AUXB (p)
AUXB (n)
DAz (p)
DAz (n)
DBz(p)
DBz(n)
SEL
SEL
SEL
HD3SS212
SEL = 0
SEL = 1
4
4
4
4
4
4
(z = 0,1, 2or3)
HPDC
DCz
(p)
DCz
(n)
AUXC
(p)
AUXC
(n)
SEL = 1
SEL = 0
SEL = 1
SEL = 0
125kW
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Folder
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An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.
English Data Sheet: SLAS822
HD3SS212
ZHCS600C –DECEMBER 2011 –REVISED OCTOBER 2016
HD3SS212 5.4Gbps DisplayPort 1.2 2 选选 1 差差动动开开关关
1
1 特特性性
1
• 与Displayport 1.2的电气标准兼容
• 2:1开关支持的最高数据速率为5.4Gbps
• 支持热插拔检测(HPD)开关
• 在5.4 GHz上宽-3dB差分带宽(BW)
• 出色的动态特性(2.7GHz情况下)
– 串扰 = -50dB
– 隔音 = -22dB
– 插入损耗 = –1.4dB
– 回波损耗 = –11dB
– 最大位到位失真 = 4ps
• 漏极电源电压电压(VDD)运行范围3.3V ± 10%
• 小型 5mm x 5mm x 1mm,48 焊球 u*BGA 封装方
式
• 输出使能 (OE) 引脚禁用开关以省电
• 功耗
– HD3SS212 < 10mW(待机功耗 < 30µW,此
时,OE = L)在整个文档内将
2 应应用用
• 需要 DP 和 PCI Express 的 主板 应用
• 台式电脑
• 笔记本电脑
• 底座
3 说说明明
HD3SS212 是一款高速无源开关,能够在应用中将两
个完全 DisplayPort 4 通道端口从两个源之一切换到一
个目标位置。对于 DisplayPort 应用, HD3SS212 还
支持在辅助 (AUX) 和热插拔检测 (HPD) 信号间切换。
HPD 路径是一个缓冲器,此缓冲器在 HPDC 线路上要
求一个 125kΩ 下拉电阻。
一个典型应用将是包含 2 个图形处理单元 (GPU) 的主
板,这些处理单元需要驱动一个 DisplayPort 负输出。
GPU 由 Dx_SEL 引脚选择。HD3SS212 采用 48 焊球
球状引脚栅格阵列 (BGA) 封装方式并在 -40°C 至
105°C 的完全工业温度范围内由 3.3V 单电源供电运
行。
器器件件信信息息
(1)
器器件件型型号号 封封装装 封封装装尺尺寸寸((标标称称值值))
HD3SS212
BGA MicroStar
Junior (48)
5.00mm x 5.00mm
(1) 要了解所有可用封装,请见数据表末尾的可订购产品附录。
功功能能方方框框图图
2
HD3SS212
ZHCS600C –DECEMBER 2011 –REVISED OCTOBER 2016
www.ti.com.cn
Copyright © 2011–2016, Texas Instruments Incorporated
目目录录
1 特特性性.......................................................................... 1
2 应应用用.......................................................................... 1
3 说说明明.......................................................................... 1
4 修修订订历历史史记记录录 ........................................................... 2
5 Pin Configuration and Function........................... 3
6 Specifications......................................................... 5
6.1 Absolute Maximum Ratings ...................................... 5
6.2 ESD Ratings ............................................................ 5
6.3 Recommended Operating Conditions....................... 5
6.4 Thermal Information.................................................. 5
6.5 Electrical Characteristics........................................... 6
6.6 Typical Characteristics.............................................. 7
7 Parameter Measurement Information .................. 8
7.1 Test Timing Diagrams............................................... 8
8 Detailed Description............................................ 10
8.1 Overview ................................................................. 10
8.2 Functional Block Diagram ....................................... 10
8.3 Feature Description................................................. 11
8.4 Device Functional Modes........................................ 11
9 Application and Implementation ........................ 12
9.1 Application Information............................................ 12
9.2 Typical Application ................................................. 13
10 Power Supply Recommendations ..................... 15
11 Layout................................................................... 15
11.1 Layout Guidelines ................................................. 15
11.2 Layout Example .................................................... 15
12 器器件件和和文文档档支支持持 ..................................................... 16
12.1 接收文档更新通知 ................................................. 16
12.2 社区资源................................................................ 16
12.3 商标 ....................................................................... 16
12.4 静电放电警告......................................................... 16
12.5 Glossary................................................................ 16
13 机机械械、、封封装装和和可可订订购购信信息息....................................... 16
4 修修订订历历史史记记录录
注:之前版本的页码可能与当前版本有所不同。
Changes from Revision B (January 2014) to Revision C Page
• 已添加 器件信息表,ESD 额定值表,特性 描述 部分,器件功能模式,应用和实施部分,电源相关建议部分,布局部
分,器件和文档支持部分以及机械、封装和可订购信息部分。............................................................................................... 1
• 已删除 订购信息表。请参见数据表末尾的 POA。.................................................................................................................. 1
Changes from Revision A (March 2012) to Revision B Page
• 已更改 OE 更改为 OE ............................................................................................................................................................ 1
Changes from Original (December 2011) to Revision A Page
• 已更改 说明, 从“–40°C 到 85°C 的整个工业温度范围”更改为“–40°C 到 105°C 的整个工业温度范围” ................................ 1
• Added Operating Temperature to the Abs Max Table ........................................................................................................... 5
• Changed the Operating free-air temperature From MAX = 85°C To: 105°C ......................................................................... 5
• Changed the values of ψ
JT
and ψ
JB
in the Thermal Information table .................................................................................... 5
• Changed the MAX value of Leakage current (Dx_SEL), VDD = 0 V From: 8µA To: 10µA ................................................... 6
1 2 3 4 5 6 7 8 9
A
Dx_SEL
VDD DA0(n) DA1(n) DA2(n) DA3(p) DA3(n)
B
DC0(n) DC0(p)
GND DA0(p) DA1(p) DA2(p)
OE
DB0(p) DB0(n)
C
GND
D
DC1(n) DC1(p) DB1(p) DB1(n)
E
DC2(n) DC2(p) DB2(p) DB2(n)
F
DC3(n) DC3(p) DB3(p) DB3(n)
G
GND GND
H
AUXC(n) AUXC(p) HPDB
GND NC AUXB(p) GND NC AUXA(p)
J
HPDC HPDA
VDD NC AUXB(n) NC AUXA(n)
NC
Top View
48-Ball ZQE
u*BGA
Package
5 mm x 5 mm
1
A
H
B
C
D
E
F
G
J
2
3
4
5 6
7
8 9
GND VDD Signal Pin
3
HD3SS212
www.ti.com.cn
ZHCS600C –DECEMBER 2011–REVISED OCTOBER 2016
Copyright © 2011–2016, Texas Instruments Incorporated
5 Pin Configuration and Function
4
HD3SS212
ZHCS600C –DECEMBER 2011 –REVISED OCTOBER 2016
www.ti.com.cn
Copyright © 2011–2016, Texas Instruments Incorporated
Pin Functions
PIN PIN NAME I/O DESCRIPTION
A1 Dx_SEL Control I High Speed Port Selection Control Pins
B4
A4
DA0(p)
DA0(n)
I/O
Port A, Channel 0, High Speed Positive Signal
Port A, Channel 0, High Speed Negative Signal
B5
A5
DA1(p)
DA1(n)
I/O
Port A, Channel 1, High Speed Positive Signal
Port A, Channel 1, High Speed Negative Signal
B6
A6
DA2(p)
DA2(n)
I/O
Port A, Channel 2, High Speed Positive Signal
Port A, Channel 2, High Speed Negative Signal
A8
A9
DA3(p)
DA3(n)
I/O
Port A, Channel 3, High Speed Positive Signal
Port A, Channel 3, High Speed Negative Signal
B8
B9
DB0(p)
DB0(n)
I/O
Port B, Channel 0, High Speed Positive Signal
Port B, Channel 0, High Speed Negative Signal
D8
D9
DB1(p)
DB1(n)
I/O
Port B, Channel 1, High Speed Positive Signal
Port B, Channel 1, High Speed Negative Signal
E8
E9
DB2(p)
DB2(n)
I/O
Port B, Channel 2, High Speed Positive Signal
Port B, Channel 2, High Speed Negative Signal
F8
F9
DB3(p)
DB3(n)
I/O
Port B, Channel 3, High Speed Positive Signal
Port B, Channel 3, High Speed Negative Signal
B2
B1
DC0(p)
DC0(n)
I/O
Port C, Channel 0, High Speed Positive Signal
Port C, Channel 0, High Speed Negative Signal
D2
D1
DC1(p)
DC1(n)
I/O
Port C, Channel 1, High Speed Positive Signal
Port C, Channel 1, High Speed Negative Signal
E2
E1
DC2(p)
DC2(n)
I/O
Port C, Channel 2, High Speed Positive Signal
Port C, Channel 2, High Speed Negative Signal
F2
F1
DC3(p)
DC3(n)
I/O
Port C, Channel 3, High Speed Positive Signal
Port C, Channel 3, High Speed Negative Signal
H9
J9
AUXA(p)
AUXA(n)
I/O
Port A AUX Positive Signal
Port A AUX Negative Signal
H6
J6
AUXB(p)
AUXB(n)
I/O
Port B AUX Positive Signal
Port B AUX Negative Signal
H2
H1
AUXC(p)
AUXC(n)
I/O
Port C AUX Positive Signal
Port C AUX Negative Signal
J2, H3, J1 HPDA/B/C I/O Port A/B/C Hot Plug Detect
B7 OE I Output Enable
A2, J4 VDD Supply 3.3V Positive power supply voltage
B3, C8, G2,
G8, H4, H7
GND Supply Negative power supply voltage
C2, H5, H8,
J5, J8
NC Electrically not connected
5
HD3SS212
www.ti.com.cn
ZHCS600C –DECEMBER 2011–REVISED OCTOBER 2016
Copyright © 2011–2016, Texas Instruments Incorporated
(1) Stresses beyond those listed under absolute maximum ratings may cause permanent damage to the device. These are stress ratings
only and functional operation of the device at these or any conditions beyond those indicated under recommended operating conditions
is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2) All voltage values, except differential voltages, are with respect to network ground terminal.
(3) Tested in accordance with JEDEC Standard 22, Test Method A114-B
6 Specifications
6.1 Absolute Maximum Ratings
over operating free-air temperature range (unless otherwise noted)
(1)(2)
MIN MAX UNIT
Supply voltage range
(3)
VDD –0.5 4 V
Voltage range
Differential I/O –0.5 4 V
Control pin –0.5 VCC +0.5 V
Operating free-air temperature –40 105 °C
Continuous power dissipation See Thermal Information
Storage temperature –55 125 °C
(1) Tested in accordance with JEDEC Standard 22, Test Method C101-A
(2) Tested in accordance with JEDEC Standard 22, Test Method A115-A
6.2 ESD Ratings
VALUE UNIT
V
(ESD)
Electrostatic discharge
Human-body model (HBM)
(1)
±4000
V
Charged-device model (CDM)
(2)
±1000
6.3 Recommended Operating Conditions
Nominal values for all parameters are at V
CC
= 3.3V and T
A
= 25°C, all temperature limits are specified by design
PARAMETER CONDITIONS MIN NOM MAX UNIT
V
DD
Supply voltage 3.0 3.3 3.6 V
V
IH
Input high voltage Control Pins, Signal Pins (Dx_SEL, OE) (HPDC, 5V Tolerant) 2.0 VDD V
V
IL
Input low voltage Control Pins, Signal Pins (Dx_SEL, OE, HPDC) –0.1 0.8 V
V
I/O_Diff
Differential voltage (Dx,
AUXx)
Switch I/O diff voltage 0 1.8 Vpp
V
I/O_CM
Common voltage (Dx,
AUXx)
Switch I/O common mode voltage 0 2.0 V
Operating free-air
temperature
–40 105 °C
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application
report.
6.4 Thermal Information
THERMAL METRIC
(1)
HD3SS212
UNITµ*BGA (ZQE)
48-Ball
θ
JA
Junction-to-ambient thermal resistance 90.5 °C/W
θ
JCtop
Junction-to-case (top) thermal resistance 41.9 °C/W
θ
JB
Junction-to-board thermal resistance 53.9 °C/W
ψ
JT
Junction-to-top characterization parameter 1.8 °C/W
ψ
JB
Junction-to-board characterization parameter 53.4 °C/W
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