TPS65191
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SLVS963A –JULY 2009–REVISED AUGUST 2010
ELECTRICAL CHARACTERISTICS
VOFF = –10 V, VON = 30 V, EN = 3.3 V, T
A
= –40°C to 85°C, typical values are at T
A
= 25°C (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
SUPPLY CURRENT
Quiescent current into VON 600 900
I
QIN
CPVx = GND, STV = 3.3 V mA
Quiescent current out of VOFF 120 200
Shutdown current into VON 520 900
CPVx = GND, STV = 3.3 V,
I
SD
mA
EN = GND
Shutdown current out of VOFF 260 400
UNDERVOLTAGE LOCKOUT
VON rising 10 13 V
V
UVLO
Undervoltage lockout threshold on VON
Hysteresis 250 mV
LOGIC SIGNALS EN, CPVx, STV
V
IH
High level input voltage of CPVx, STV, EN 2 V
V
IL
Low level input voltage of CPVx, STV, EN 0.5 V
OUTPUT CKVx, CKVBx, STVP, CKVCSx
Output high voltage of CKVx, CKVBx VON – 0.3
V
OH
I
OH
= 10 mA V
Output high voltage of STVP VON – 0.8
Output low voltage of CKVx, CKVBx VOFF + 0.2
V
OL
I
OL
= –10 mA V
Output low voltage of STVP VOFF + 0.4
R
CHSH
Charge sharing on resistance I
CHSH
= 10 mA 120 Ω
DISCHARGING CIRCUIT
R
DSCHG
Discharging resistance DISH = –2 V 1.5 kΩ
R
BIAS
Resistance DISH to GND 100 kΩ
CONTROL DELAY
V
DLYREF
Reference voltage for comparator 2.9 V
I
DLYREF
Delay charge current 15 mA
R
DLY
Delay resistor 140 200 260 kΩ
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