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TI-TPS2378.pdf
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RTN
V
C
D
1
C
1
R
DEN
R
CLS
From Ethernet
Transformers
V
DD
V
SS
CLS
From Spare
Pairs or
Transformers
DEN
D
A
AC
Adapter
CDB
T2P
APD
R
APD2
R
APD1
R
T2P
C
BULK
TPS2378
DC/DC Converter
SS
Product
Folder
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Design
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.
English Data Sheet: SLVSB99
TPS2378
ZHCS791C –MARCH 2012–REVISED JULY 2015
TPS2378 IEEE 802.3at PoE 高高功功率率 PD 接接口口
1
1 特特性性
1
• 带有状态标志的 IEEE 802.3at 2 类硬件分类
• 适配器优先级输入
• 直流 (DC)/DC 转换器启用
• 稳健耐用的 100V、0.5Ω 热插拔金属氧化物半导体
场效应晶体管 (MOSFET)
• 工作电流高达 850mA
• 1A(典型值)工作电流限值
• 15kV 和 8kV 系统级静电放电 (ESD) 能力
• PowerPAD™HSOP 封装
2 应应用用
• IEEE 802.3at 兼容器件
• 视频和网络语音 (VoIP) 电话
• 多频带访问点
• 监控摄像机
• 微微基站
• 强制型、四对、高功率设备(SLVA625)
3 说说明明
这款 8 引脚集成电路包含 实现 IEEE802.3at 2 类受电
设备 (PD) 所需的全部功能。该控制器的内部开关电阻
低至 0.5Ω,并且采用耐热增强型 PowerPAD 封装,因
此能够长时间在高达 0.85A 的电流下运行。TPS2378
具有 一个辅助电源检测 (APD) 输入,可优先连接外部
电源适配器。该器件还 具有 100V 导通晶体管、
140mA 浪涌电流限制、2 类指示、自动重试故障保护
以及开漏电源正常状态输出。
器器件件信信息息
(1)
器器件件型型号号 封封装装 封封装装尺尺寸寸((标标称称值值))
TPS2378 HSOP (8) 4.89mm × 3.90mm
(1) 要了解所有可用封装,请参见数据表末尾的可订购产品附录。
典典型型应应用用电电路路
2
TPS2378
ZHCS791C –MARCH 2012–REVISED JULY 2015
www.ti.com.cn
Copyright © 2012–2015, Texas Instruments Incorporated
目目录录
1 特特性性.......................................................................... 1
2 应应用用.......................................................................... 1
3 说说明明.......................................................................... 1
4 修修订订历历史史记记录录 ........................................................... 2
5 Pin Configuration and Functions......................... 3
6 Specifications......................................................... 4
6.1 Absolute Maximum Ratings ...................................... 4
6.2 ESD Ratings.............................................................. 4
6.3 Recommended Operating Conditions....................... 4
6.4 Thermal Information.................................................. 5
6.5 Electrical Characteristics........................................... 5
6.6 Typical Characteristics.............................................. 7
7 Detailed Description............................................ 10
7.1 Overview ................................................................. 10
7.2 Functional Block Diagram ....................................... 10
7.3 Feature Description................................................. 10
7.4 Device Functional Modes........................................ 13
8 Application and Implementation ........................ 21
8.1 Application Information............................................ 21
8.2 Typical Application .................................................. 21
9 Power Supply Recommendations...................... 24
10 Layout................................................................... 24
10.1 Layout Guidelines ................................................. 24
10.2 Layout Example .................................................... 24
10.3 EMI Containment .................................................. 25
10.4 Thermal Considerations and OTSD...................... 25
10.5 ESD....................................................................... 25
11 器器件件和和文文档档支支持持 ..................................................... 26
11.1 文档支持................................................................ 26
11.2 社区资源................................................................ 26
11.3 商标 ....................................................................... 26
11.4 静电放电警告......................................................... 26
11.5 Glossary................................................................ 26
12 机机械械、、封封装装和和可可订订购购信信息息....................................... 26
4 修修订订历历史史记记录录
注:之前版本的页码可能与当前版本有所不同。
Changes from Revision B (November 2012) to Revision C Page
• 已添加 ESD
额定值
表,
特性 描述
部分,
器件功能模式
,
应用和实施
部分,
电源相关建议
部分,
布局
部分,
器件和文
档支持
部分以及
机械、封装和可订购信息
部分........................................................................................................................ 1
• Deleted Detailed Pin Description section. ........................................................................................................................... 15
• Deleted CBD Pin Interface section....................................................................................................................................... 22
• Deleted APD Pin Divider Network, R
APD1
, R
APD2
section...................................................................................................... 22
Changes from Revision A (March 2012) to Revision B Page
• 已增加应用:强制型、四对、高功率设备 (SLVA625) ............................................................................................................ 1
• Added Note 1 to the ELECTRICAL CHARACTERISTICS table ............................................................................................ 6
• Added section: Forced, Four-Pair, High Power PoE ........................................................................................................... 13
• Changed Table 2, From: POWER ≤ 12.95W To: POWER ≤ 13W, From: POWER > 12.95W To POWER > 13W, and
PD INPUT POWER (max) From: 12.95 W To 13W ............................................................................................................ 14
• Changed Table 2, PSE Output Power for 802.3at (Type 2) From: 36W to 30W ................................................................. 14
• Changed text in the Detection section From: "( ΔV / ΔI ) between 23.75 k Ω and 26.25 kΩ at the PI. " To: "( ΔV / ΔI )
between 23.7 kΩ and 26.3 kΩ at the PI." ............................................................................................................................ 16
• Added text to the Startup and Converter Operation section: "Additional loading applied between V
VDD
and V
RTN
during the inrush state may prevent successful PD and subsequent converter start up."................................................... 17
• Changed text in the Detection Resistor, R
DEN
section From: "R
DEN
between 23.75 kΩ and 26.25 kΩ, or 25 kΩ ± 5%.
" To: "R
DEN
between 23.7 kΩ and 26.3 kΩ, or 25 kΩ ± 5%."................................................................................................ 22
Changes from Original (March 2012) to Revision A Page
• Changed the Inrush termination MAX value From: 100% To: 99% ....................................................................................... 5
1
3
2
4
6
5
7
8
DEN
CLS
V
DD
V
SS
T2P
CDB
RTN
APD
3
TPS2378
www.ti.com.cn
ZHCS791C –MARCH 2012–REVISED JULY 2015
Copyright © 2012–2015, Texas Instruments Incorporated
5 Pin Configuration and Functions
DDA Package
8-Pin HSOP
Top View
Pin Functions
PIN
I/O DESCRIPTION
NAME NO.
V
DD
1 I Connect to positive PoE input power rail. Bypass with 0.1 µF to V
SS
.
DEN 2 I/O Connect 24.9 kΩ to V
DD
for detection. Pull to V
SS
disable pass MOSFET.
CLS 3 O Connect resistor from CLS to V
SS
to program classification current.
V
SS
4 — Connect to negative power rail derived from PoE source.
RTN 5 — Drain of PoE pass MOSFET.
CDB 6 O Active low, open-drain converter disable output, referenced to RTN.
T2P 7 O Active low indicates type 2 PSE connected or APD active.
APD 8 I Raise 1.5 V above RTN to disable pass MOSFET and force T2P active.
Pad — — The PowerPad™ must be connected to V
SS
. A large fill area is required to assist in heat dissipation.
4
TPS2378
ZHCS791C –MARCH 2012–REVISED JULY 2015
www.ti.com.cn
Copyright © 2012–2015, Texas Instruments Incorporated
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings
only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended
Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2) With I
(RTN)
= 0
(3) Do not apply voltages to these pins
(4) SOA limited to RTN = 80 V at 1.2 A.
6 Specifications
6.1 Absolute Maximum Ratings
over recommended T
J
range; voltages with respect to V
VSS
(unless otherwise noted)
(1)
MIN MAX UNIT
Input voltage
V
DD
, DEN –0.3 100
V
RTN
(2)
–0.6 100
CLS
(3)
–0.3 6.5
APD to RTN –0.3 19
[CDB, T2P] to RTN –0.3 100
Sinking current
RTN
(4)
Internally limited
mACDB, T2P 5
DEN 1
Sourcing current CLS 65 mA
T
JMAX
Maximum junction temperature Internally limited °C
T
stg
Storage temperature –65 150 °C
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.
(3) Discharges applied to circuit of Figure 24 between RJ-45, adapter, and output voltage rails
6.2 ESD Ratings
VALUE UNIT
V
(ESD)
Electrostatic discharge
Human body model (HBM), per ANSI/ESDA/JEDEC JS-001, all pins
(1)
2000
V
Charged device model (CDM), per JEDEC specification JESD22-C101, all
pins
(2)
500
IEC 61000-4-2 contact discharge
(3)
8000
IEC 61000-4-2 air-gap discharge
(3)
15000
(1) Voltage should not be externally applied to this pin.
6.3 Recommended Operating Conditions
over operating free-air temperature range and voltages with respect to V
SS
(unless otherwise noted)
MIN NOM MAX UNIT
Input voltage range
RTN, VDD 0 57
VAPD to RTN 0 18
CDB, T2P to RTN 0 57
Sinking current
RTN 0.85 A
CDB, T2P 2 mA
Resistance CLS
(1)
60 Ω
Junction temperature –40 125 °C
5
TPS2378
www.ti.com.cn
ZHCS791C –MARCH 2012–REVISED JULY 2015
Copyright © 2012–2015, Texas Instruments Incorporated
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application
report, SPRA953.
6.4 Thermal Information
THERMAL METRIC
(1)
TPS2378
UNITDDA (HSOP)
8 PINS
R
θJA
Junction-to-ambient thermal resistance 45.9 °C/W
R
θJC(top)
Junction-to-case (top) thermal resistance 51.9 °C/W
R
θJB
Junction-to-board thermal resistance 28.8 °C/W
ψ
JT
Junction-to-top characterization parameter 8.9 °C/W
ψ
JB
Junction-to-board characterization parameter 28.7 °C/W
R
θJC(bot)
Junction-to-case (bottom) thermal resistance 6.7 °C/W
6.5 Electrical Characteristics
40 V ≤ V
VDD
≤ 57 V, R
DEN
= 24.9 kΩ, V
CDB
, V
CLS
, and V
T2P
open; V
APD
= V
RTN
; –40°C ≤ T
J
≤ 125°C. Positive currents are into
pins. Typical values are at 25°C. All voltages are with respect to V
VSS
unless otherwise noted.
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
DETECTION (DEN)
Bias current
DEN open, V
VDD
= 10.1 V, Measure I
SUPPLY
(VDD, RTN,
DEN), Not in mark
3 4.8 12 µA
Detection current
Measure I
SUPPLY
(VDD, RTN, DEN), V
DD
= 1.4 V 53.8 56.5 58.3
µA
Measure I
SUPPLY
(VDD, RTN, DEN), V
DD
= 10.1 V, Not in
mark
395 410 417
V
PD_DIS
Disable threshold DEN falling 3 3.7 5 V
Hysteresis 50 113 200 mV
AUXILIARY POWER DETECTION (APD)
V
APDEN
Voltage threshold V
APD
rising, measure to V
RTN
1.4 1.5 1.6
V
V
APDH
Voltage threshold Hysteresis, measure to V
RTN
0.27 0.3 0.33
Sinking current V
(APD–RTN)
= 5 V, measure I
APD
1 1.73 3 µA
CLASSIFICATION (CLS)
I
CLS
Classification current
13 V ≤ V
VDD
≤ 21 V, Measure IV
DD
+ I
DEN
+ I
RTN
R
CLS
= 1270 Ω 1.8 2.17 2.6
mA
R
CLS
= 243 Ω 9.9 10.6 11.2
R
CLS
= 137 Ω 17.6 18.6 19.4
R
CLS
= 90.9 Ω 26.5 27.9 29.3
R
CLS
= 63.4 Ω 38 39.9 42
V
CL_ON
Class lower threshold V
VDD
rising, I
CLS
↑ 11.9 12.5 13
V
V
CL_H
Class lower threshold Hysteresis 1.4 1.6 1.7
V
CU_ON
Class upper threshold V
VDD
rising, I
CLS
↓ 21 22 23
V
V
CU_H
Class upper threshold Hysteresis 0.5 0.78 0.9
V
MSR
Mark reset threshold V
VDD
falling 3 3.9 5 V
Mark state resistance 2-point measurement at 5 V and 10.1 V 6 10 12 kΩ
Leakage current V
VDD
= 57 V, V
CLS
= 0 V, measure I
CLS
1 µA
PASS DEVICE (RTN)
r
DS(on)
On resistance 0.2 0.42 0.75 Ω
Input bias current V
VDD
= V
RTN
= 30 V, measure I
RTN
30 µA
Current limit V
RTN
=1.5 V 0.85 1 1.2 A
Inrush current limit V
RTN
= 2 V, V
VDD
: 20 V → 48 V 100 140 180 mA
Inrush termination Percentage of inrush current 80% 90% 99%
Foldback threshold V
RTN
rising 11 12.3 13.6 V
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