TI-TPS65642.pdf资源-CSDN文库

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TI的TPS65642是一款专为笔记本电脑、平板电脑及显示器设计的高效能LCD偏置电压解决方案。该器件集成了多种电源管理功能，包括升压和降压转换器，以及线性稳压器，确保为LCD面板提供稳定且精确的电压。 1. **升压转换器**：TPS65642有两个升压转换器，AVDD和VGH。AVDD用于同步升压转换，为LCD面板的源极驱动器供电，而VGH则是一个支持温度补偿的非同步升压转换器，它为栅极驱动器/电平位移器提供电源，具备栅极电压整形功能，确保电压的精确控制。 2. **降压转换器**：包括1VIO1和VCORE两个降压转换器，用于为系统提供逻辑电压，如系统核心电压（VCORE）和I/O电压（VIO1）。这些转换器可以实现高效的电压调节，适应不同负载条件下的需求。 3. **LDO线性稳压器**：VIO2是一个低压降线性稳压器，为系统提供稳定的低电压，适用于对噪声敏感的应用。 4. **可编程伽玛电压**：TPS65642拥有14通道10位可编程伽玛电压校正，能够调整LCD面板的亮度和对比度，实现更细腻的图像显示效果，尤其适合需要高质量显示的设备。 5. **VCOM校准器**：集成有两个高速放大器的可编程VCOM校准器，用于精确控制液晶显示器的公共电压（VCOM），从而减少图像失真和提高显示质量。 6. **I2C接口**：支持I2C通信协议，允许通过I2C总线进行参数配置和状态监控，简化系统集成和调试。 7. **保护功能**：包括热关断和写保护，以防止设备在异常条件下受损。此外，XAO（面板放电信号）和RST（系统复位信号）提供了面板管理和系统级的控制功能。 8. **封装与工作环境**：采用DSBGA封装，尺寸为3.16mm x 3.45mm，焊球间距为0.4mm，可在-40°C到85°C的温度范围内工作。 9. **订购信息**：产品以卷带形式供应，每卷包含3000个器件，型号为TPS65642YFF。 TPS65642是为现代LCD显示设备设计的一款高度集成、功能丰富的电源管理IC，旨在优化显示性能并确保系统的可靠性和稳定性。它的多种电源管理功能和可编程特性使其成为高要求显示应用的理想选择。

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Boost Converter 1

IO1

Buck Converter 1

CORE

Buck Converter 2

GAM

Programmable

Gamma Voltages

Programmable

V + Buffers

COM

I C

Boost Converter 2

GHM

Gate Voltage Shaping

IO2

LDO Regulator

I C Interface

RST

Reset Generator

IO1

XAO

TPS65642

www.ti.com.cn

ZHCSBB3 –JULY 2013

用用于于笔笔记记本本个个人人电电脑脑、、平平板板电电脑脑和和显显示示器器，，支支持持集集成成伽伽马马基基准准的的液液晶晶显显

示示器器 (LCD) 偏偏置置电电压压

查查询询样样品品: TPS65642

1 介介绍绍

1.1 特特性性

• 2.6V 至至 6V 输输入入电电压压范范围围 • 面面板板放放电电信信号号 (XAO)

• 同同步步升升压压转转换换器器 (AV

) • 系系统统复复位位信信号号 (RST)

• 支支持持温温度度补补偿偿的的非非同同步步升升压压转转化化器器 (V

) • 14 通通道道，，10 位位可可编编程程伽伽马马电电压压校校正正

• 同同步步降降压压转转换换器器 (V

内内核核

) • 支支持持写写入入保保护护的的片片载载 EEPROM

• 同同步步降降压压转转换换器器 (V

IO1

) • I

C™ 接接口口

• 低低压压降降线线性性稳稳压压器器 (V

IO2

) • 热热关关断断

• 带带有有两两个个集集成成型型缓缓冲冲放放大大器器的的可可编编程程 V

COM

校校准准器器 • 支支持持 GIP 和和非非 GIP 显显示示

• 栅栅极极电电压压整整形形 • 56 焊焊球球，，3.16mm x 3.45mm 0.4mm 焊焊球球间间距距，，芯芯

片片尺尺寸寸球球栅栅阵阵列列封封装装 (DSBGA)

1.2 应应用用范范围围

• 笔笔记记本本电电脑脑

• 平平板板电电脑脑

• 显显示示器器

1.3 说说明明

TPS65642 是一款紧凑型 LCD 偏置电压解决方案，此解决方案主要用于笔记本电脑和平板电脑。此器件包

含两个升压转换器来为 LCD 面板的源极驱动器和栅极驱动器/电平位移器供电，两个降压转换器以及一个为

系统提供逻辑电压的低压降 (LDO) 线性稳压器；一个具有两个高速放大器的可编程 V

COM

发生器；14 通道伽

马电压校正；和一个栅极电压整形功能。

Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of

Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.

PRODUCTION DATA information is current as of publication date. Products conform to

specifications per the terms of the Texas Instruments standard warranty. Production

processing does not necessarily include testing of all parameters. English Data Sheet: SLVSBX6

TPS65642

ZHCSBB3 –JULY 2013

www.ti.com.cn

2 Electrical Specifications

2.1 ORDERING INFORMATION

(1)

ORDERING PACKAGE PACKAGE MARKING

–40°C to 85°C TPS65642YFF 3.16 mm × 3.45 mm DSBGA, 0.4 mm pitch TPS65642

(1) The device is supplied taped and reeled, with 3000 devices per reel.

2.2 ABSOLUTE MAXIMUM RATINGS

(1)

over operating free-air temperature range (unless otherwise noted)

MIN MAX UNIT

VIN, SW2, VCORE, SW3, VIO1, VIO2 RSET, COMP, SCL, SDA,

–0.3 7 V

EN, FLK, WP, TCOMP, XAO, RST

AVDD, SW1, OUT1, OUT2, OUTA-OUTN –0.3 12 V

SW4 –0.3 36

(2)

Pin voltage

POS1, NEG1, POS2, NEG2 –0.3 12

(3)

|POS1-NEG1|

(4)

, |POS2-NEG2|

(4)

2 V

VGH, VGHM, RE –0.3 40

(5)

Human Body Model 2000 V

ESD Rating Machine Model 200 V

Charged Device Model 700 V

Ambient temperature, T

-40 85 °C

Junction temperature, T

-40 150 °C

Storage temperature, T

STG

–65 150 °C

(1) Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings

only and functional operation of the device at these or any other conditions beyond those indicated under “recommended operating

conditions” is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

(2) V

supplies up to 40 V can be generated, but require an external cascode transistor or charge pump.

(3) For supply voltages less than 12 V, the absolute maximum input voltage is equal to the supply voltage.

(4) Differential input voltage.

(5) The combination of low temperatures and high V

voltages can cause increased leakage current through the RE pin. In GIP

applications that do not use the gate-voltage shaping function it is recommended to leave the RE pin open to minimize this effect.

2.3 THERMAL INFORMATION

(1)

TPS65642

THERMAL METRIC YFF UNITS

56 PINS

Junction-to-ambient thermal resistance 45

JCtop

Junction-to-case (top) thermal resistance 0.2

Junction-to-board thermal resistance 6.4

°C/W

Junction-to-top characterization parameter 0.8

Junction-to-board characterization parameter 6.1

JCbot

Junction-to-case (bottom) thermal resistance N/A

(1) For more information about traditional and new thermal metrics, see the IC Package Thermal Metrics application report, SPRA953.

Submit Documentation Feedback

Product Folder Links: TPS65642

TPS65642

ZHCSBB3 –JULY 2013

www.ti.com.cn

2.5 ELECTRICAL CHARACTERISTICS

= 3.3 V, V

CORE

= 1.1 V, V

IO1

= 1.7 V, V

IO2

= 1.8 V

(1)

, AV

= 8.1 V, V

= 24 V, T

= −40°C to 85°C. Typical values are at

25°C (unless otherwise noted).

PARAMETER TEST CONDITIONS MIN TYP MAX UNIT

POWER SUPPLY

Supply current into VIN pins Converters not switching 1.9 3 mA

Pin G5. 0.1 1

Supply current into AVDD pins Pin B7. No load on gamma reference outputs 4.3 6 mA

Pin F4. No load on op-amp outputs 4.0 7.5

Supply current into VGH No load on VGHM 0.1 1 mA

UNDERVOLTAGE LOCKOUT

rising 2.3 2.42 2.5

Undervoltage lockout threshold

UVLO

falling 2.1 2.19 2.4 V

Hysteresis 0.23

CONTROL PINS (EN, FLK, WP)

= 2.64 V 1.0 1.8

EN high-level input voltage threshold EN rising V

= 3.3 V 1.1 1.8 V

= 6 V 1.7 1.8

= 2.64 V 0.7 0.9

EN low-level input voltage threshold EN falling V

= 3.3 V 0.7 1.0 V

= 6 V 0.7 1.6

EN high-level input current EN = 2.5 V –100 100 nA

EN low-level input current EN = 0 V –100 100 nA

= 2.64 V 0.9 1.8

FLK high-level input voltage

FLK rising V

= 3.3 V 1 1.8 V

threshold

= 6 V 1.4 1.8

= 2.64 V 0.6 0.8

FLK low-level input voltage threshold FLK falling V

= 3.3 V 0.6 0.9 V

= 6 V 0.6 1.3

FLK high-level input current FLK = 2.5 V –100 100 nA

FLK-low-level input current FLK = 0 V –100 100 nA

= 2.64 V 1 1.8

WP high-level input voltage threshold WP rising V

= 3.3 V 1.1 1.8 V

= 6 V 1.7 1.8

= 2.64 V 0.7 0.9

WP low-level input voltage threshold WP falling V

= 3.3 V 0.7 1 V

= 6 V 0.7 1.6

PULL-UP

WP internal pull-up resistance 30 52 75 kΩ

BOOST CONVERTER 1 (AV

)

Output voltage range 6 9.1

Tolerance –1% 1%

UVP

Undervoltage protection threshold AV

falling 65 70 75 % of AV

SCP

Short-circuit threshold AV

falling 25 30 35 % of AV

Switch leakage current V

= V

= 3.3 V, EN = 0 V, T

= –40°C to 85°C 10 µA

DS(ON)

Switch ON resistance I

= 1 A 114 250 mΩ

LIM

Switch current limit 2.5 3.0 3.5 A

DS(ON)

Rectifier ON resistance I

= 1 A 242 400 mΩ

FREQ = 0 750

Switching frequency (see Figure 4-

kHz

15)

FREQ = 1 1200

DS(ON)

Discharge ON resistance I

AVDD

= 10 mA 76 100 Ω

(1) When V

IO1

= 1.7 V or 1.8 V, the LDO regulator is disabled. When V

IO1

= 2.5 V, the LDO regulator is enabled.

Submit Documentation Feedback

Product Folder Links: TPS65642

TPS65642

www.ti.com.cn

ZHCSBB3 –JULY 2013

ELECTRICAL CHARACTERISTICS (continued)

= 3.3 V, V

CORE

= 1.1 V, V

IO1

= 1.7 V, V

IO2

= 1.8 V

(1)

, AV

= 8.1 V, V

= 24 V, T

= −40°C to 85°C. Typical values are at

25°C (unless otherwise noted).

PARAMETER TEST CONDITIONS MIN TYP MAX UNIT

BUCK CONVERTER 1 (V

CORE

)

Output voltage 1 1.1 1.3

CORE

Tolerance –3% 3%

UVP

Undervoltage protection threshold V

CORE

falling 65 70 75 % of V

CORE

SCP

Short-circuit threshold V

CORE

falling 25 30 35 % of V

CORE

LIMA

Switch current limit I

ramps from 0 A to 2 A 0.8 1.0 1.2 A

High-side, I

= I

LIM

183 310

DS(ON)

Switch ON resistance mΩ

Low-side, I

= 1 A 95 150

= 3.3 V 260 370 480

OFF

Off time ns

= 5 V 380 560 750

BUCK CONVERTER 2 (V

IO1

)

Output voltage 1.7 1.8 2.5

IO1

Tolerance –3% 3%

UVP

Undervoltage protection threshold V

IO1

falling 65 70 75 % of V

IO1

SCP

Short-circuit threshold V

IO1

falling 25 30 35 % of V

IO1

LIM

High-side switch current limit High-side, I

ramps from 0 A to 2 A 0.8 1 1.2 A

High-side switch ON resistance I

= I

LIM

183 350

DS(ON)

mΩ

Low-side switch ON resistance I

= 1 A 255 400

= 3.3 170 250 330

OFF

Off time μs

= 5 V 250 370 500

DS(ON)

Discharge ON resistance Measured with 10 mA 14.6 50 Ω

LINEAR REGULATOR (V

IO2

)

(2)

Output voltage 1.7 1.8 1.8

IO2

= 1 mA V

Tolerance –3% 3%

UVP

Undervoltage protection threshold V

IO2

falling 65 70 75 % of V

IO2

SCP

Short circuit threshold V

IO2

falling 25 30 35 % of V

IO2

BOOST CONVERTER 2 (V

)

Output voltage range 16 40

(3)

Tolerance –3% 3%

UVP

Undervoltage protection threshold V

falling 65 70 75 % of V

SCP

Short-circuit threshold V

falling 25 30 35 % of V

Switch leakage current V

=0 V; V

SW4

=36 V 10 µA

DS(ON)

Switch ON resistance I

=1 A 0.41 1 Ω

ON(MAX)

Maximum t

time 1 1.67 2.5 µs

OFF

time 1.5 2.11 3 µs

85°C 48 54

TCOMP

Thermistor reference current I

SET

= 50 μA, V

TCOMP

= 1 V µA

25 °C 50

RESET (RST)

Reset pulse duration range 2 16

Measured from end of V

CORE

's ramp to 50% of RST's

RESET

rising edge with a 10k pull-up resistor.

Tolerance –20% 30%

Low output voltage I

RST

= 1 mA (sinking) 0.27 0.5 V

High output current V

RST

=2.5 V –1 1 µA

PROGRAMMABLE GAMMA CORRECTION

Code = 1023; load = 10 µA, sourcing 5.6 100

DROPH

High-side output voltage drop mV

Code = 1023; load = 100 µA, sourcing 44.2 200

Code = 0; load = 10 µA, sinking 49.1 100

DROPL

Low-side output voltage drop mV

Code = 0; load = 100 µA, sinking 65.5 200

(2) LDO is enabled, when V

IO1

= 2.5 V.

(3) Output voltages greater than 36V require an external cascode transistor or charge pump circuit.

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Product Folder Links: TPS65642

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