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TI的TPS2392是一款专为-48伏分布式电源系统设计的热插拔电源管理集成电路。这款芯片能够处理-20伏至-80伏的输入电源范围,并且具有承受-100伏瞬态电压的能力,非常适合在电信中央交换机和无线基站等应用中使用。它的主要功能包括可编程电流限制、可编程电流上升速率控制以及可编程的欠压/过压阈值和滞后。 TPS2392通过外部的N沟道场效应晶体管(FET)和感应电阻协同工作,可以在已供电系统中安全地插入插卡或模块。通过一个由三个电阻组成的分压网络,用户可以轻松设定欠压和过压关断阈值。此外,两个活动低电平、去抖动的插入检测输入提供插卡插入的实时监控。电源良好(PG)输出信号则用于下游转换器的使能控制。 该器件还具备故障定时器功能,以防止不必要的过流保护动作,同时提供开漏故障输出(FAULT),以及一个使能输入(EN)。14引脚TSSOP封装适合常规应用,而44引脚TSSOP封装则是为了满足电信设备中对爬电距离和间隙的要求。 在故障条件下,TPS2392会锁定在关闭状态,而TPS2393则会在故障发生时尝试周期性重试负载,以适应不同的系统需求。电路图中的部分组件如电容C1、电阻R1、R2、R3和R4等,用于设定和滤波保护功能。例如,R1、R2和R3组成分压网络,用于设置UVLO(欠压锁定)和OVP(过压保护)阈值,C4则提供滤波以稳定系统电压。 TPS2392和TPS2393是为高电压环境下的热插拔操作提供全面保护的解决方案,它们提供了电流限制、电压保护、故障检测和报告等一系列功能,确保了系统在插入和移除电源模块时的安全性和稳定性。无论是对于电信基础设施还是其他需要可靠电源管理的领域,这两款集成电路都是理想的解决方案。
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SLUS536C − AUGUST 2002 − REVISED AUGUST 2004
FEATURES
D Wide Input Supply Range: −20 V to −80 V
D Transient Rating to −100 V
D Programmable Current Limit
D Programmable Current Slew Rate
D Programmable UV/OV Thresholds/Hysteresis
D Debounced Insertion Detection Inputs
D Open-Drain Power Good (PG) Output
D Fault Timer to Eliminate Nuisance Trips
D Open-Drain Fault Output (FAULT)
D Enable Input (EN)
D 14-Pin TSSOP package
D 44-Pin TSSOP Package for
Creapage/Clearance
APPLICATIONS
D −48-V Distributed Power Systems
D Central Office Switching
D Wireless Base Station
DESCRIPTION
The TPS2392 and TPS2393 integrated circuits are hot
swap power managers optimized for use in nominal
−48-V systems. They operate with supply voltage
ranges from −20-V to −80-V, and are rated to withstand
spikes to −100 V. In conjunction with an external
N-channel FET and sense resistor, they can be used to
enable live insertion of plug-in cards and modules in
powered systems. Each device provides load current
slew rate control and peak magnitude limiting.
Undervoltage and overvoltage shutdown thresholds
are easily programmed via a three-resistor divider
network. In addition, two active-low, debounced inputs
provide plug-in insertion detection. A power good (PG)
output enables downstream converters. The TPS2392
and TPS2393 also provide the basic hot swap functions
of electrical isolation of faulty cards, filtered protection
against nuisance overcurrent trips, and single-line fault
reporting. The 44-pin part supports designs where
telecomm creepage and clearance requirements must
be followed.
The TPS2392 latches off in response to current faults,
while the TPS2393 periodically retries the load in the
event of a fault.
UDG−02098
D1
BAS19
C2
0.1 µF
R3
3.92 kΩ
1%
R2
4.99 kΩ
1%
R1
200 kΩ
1%
R4
20 mΩ
1/4, 1%
R6
10 kΩ
R5
100
kΩ
C4
100 µF
100 V
C
OUT
= 32.8 V
= 30.8 V
= 72.6 V
V
UV
V
UV
V
OV
GATE
1
2
3
4
5
6
7
14
13
12
11
10
9
8
UVLO
INSA
INSB
FAULT
EN
FLTTIME
OVLO
DRAINSNS
ISENS
IRAMP −VIN
PG
RTN
TPS2392/TPS2393
VOUT+
VOUT−
VIN+
VIN−
DC/DC
CONVERTER
EN
V
DD
C3
1500 pF
VOUT+
VOUT−
GND
C1
3900 pF
−48V
Q1
IRF530
D2
5.6 V
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+&%# (%'$$1 +'$ # '%'$$"*0 %*&+' #'$#1 "** (""!'#'$,
.
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas Instruments
semiconductor products and disclaimers thereto appears at the end of this data sheet.
www.ti.com
Copyright 2004, Texas Instruments Incorporated
SLUS536C − AUGUST 2002 − REVISED AUGUST 2004
www.ti.com
2
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during
storage or handling to prevent electrostatic damage to the MOS gates.
ORDERING INFORMATION
T
A
FAULT OPERATION PACKAGE PART NUMBER
LATCH OFF TSSOP (PW)
(1)
TPS2392PW
−40°C to 85°C
PERIODIC RETRY TSSOP (PW)
(1)
TPS2393PW
−40
°
C to 85
°
C
LATCH OFF TSSOP (PW)
(1)
TPS2392DBT
PERIODIC RETRY TSSOP (PW)
(1)
TPS2393DBT
(1)
The PW and DBT package is also available taped and reeled. Add an R suffix to the device type (i.e., TPS2392PWR) for quantities of 2,500 per
reel.
ABSOLUTE MAXIMUM RATINGS
over operating free-air temperature range unless otherwise noted
(1)
TPS2392
TPS2393
UNIT
Input voltage range, V
I
UVLO, INSA, INSB, FLTTIME, IRAMP, OVLO,
DRAINSNS, GATE, ISENS
(2)
−0.3 to 15
Input voltage range, V
I
RTN
(2)
V
EN
(2)(3)
−0.3 to 100
V
Output voltage range, V
O
FAULT
(2)(4)
−0.3 to 100
Output voltage range, V
O
PG
(2)(4)
Continuous output current
FAULT
10
mA
Continuous output current
PG
10
mA
Operating junction temperature range, T
J
−55 to 125
Storage temperature, T
stg
−65 to 150
°C
Lead temperature 1,6 mm (1/16 inch) from case for 10 seconds 260
C
(1)
Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings only, and
functional operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2)
All voltages are with respect to −VIN (unless otherwise noted).
(3)
With 100-kΩ minimum input series resistance.
(4)
With 10-kΩ minimum series resistance.
SLUS536C − AUGUST 2002 − REVISED AUGUST 2004
www.ti.com
3
RECOMMENDED OPERATING CONDITIONS
MIN NOM MAX UNIT
Input supply voltage, −VIN to RTN −80 −20 V
Operating junction temperature, T
J
−40 85 °C
DISSIPATION RATINGS
PACKAGE
T
A
<25°C
POWER RATING
DERATING FACTOR
ABOVE T
A
=25°C
T
A
= 85°C
POWER RATING
TSSOP−14 750 mW 7.5 mW/°C 300 mW
1
2
3
4
5
6
7
14
13
12
11
10
9
8
UVLO
INSA
INSB
FAULT
EN
FLTTIME
IRAMP
OVLO
DRAINSNS
PG
RTN
GATE
ISENS
−VIN
PW PACKAGE
(TOP VIEW)
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
INSA
N/C
N/C
N/C
N/C
N/C
INSB
N/C
N/C
N/C
N/C
N/C
FAULT(BAR)
EN
FLTTIME
IRAMP
N/C
N/C
N/C
N/C
N/C
−VIN
UVLO
OVLO
N/C
DRAIN SENSE
PG(BAR)
N/C
N/C
N/C
N/C
N/C
RTN
N/C
N/C
N/C
N/C
N/C
GATE
ISENS
N/C
N/C
N/C
N/C
DBT PACKAGE
(TOP VIEW)
SLUS536C − AUGUST 2002 − REVISED AUGUST 2004
www.ti.com
4
ELECTRICAL CHARACTERISTICS
V
I(−VIN)
= −48 V with respect to RTN, V
I(EN)
= 2.8 V, V
I(INSA)
= 0 V, V
I(INSB)
= 0 V, V
I(UVLO)
= 2.5 V, V
I(OVLO)
= 0 V, V
I(ISENS)
= 0 V, all outputs
unloaded, T
A
= −40°C to 85°C (unless otherwise noted)
(1)(2)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
INPUT SUPPLY
I
CC1
Supply current, RTN
V
I(RTN)
= 48 V 1050 1500
A
I
CC2
Supply current, RTN
V
I(RTN)
= 80 V 1350 1700
µ
A
V
UVLO_L
Internal UVLO threshold, V
IN
rising To GATE pull-up −19 −16 −13 V
V
HYS
Internal UVLO hysteresis 200 mV
ENABLE INPUT (EN)
V
TH
Threshold voltage, V
IN
rising To GATE pull-up 1.3 1.4 1.5 V
I
SRC_EN
EN pin switched pull-up current −12 −10 −8 µA
UNDERVOLTAGE/OVERVOLTAGE COMPARATORS
V
TH_UV
Threshold voltage, V
IN
rising, UVLO To GATE pull-up 1.36 1.40 1.44 V
I
SRC_UV
UVLO pin switched pull-up current V
I(UVLO)
= 2.5 V −11.7 −10.0 −8.3 µA
I
IL
UVLO low-level input current V
I(UVLO)
= 1 V −1 1 µA
V
TH_OV
Threshold voltage, V
IN
rising, OVLO To GATE pull-up 1.36 1.40 1.44 V
I
SRC_OV
OLVO pin switched pull-up current V
I(OVLO)
= 2.5 V −11.7 −10.0 −8.3 µA
I
IL
OVLO low-level input current V
I(OVLO)
= 1 V −1 1 µA
INSERTION DETECTION
V
TH
Threshold voltage, V
IN
rising, INSA, INSB To GATE pull-down 1.0 1.4 1.8 V
I
SRC_INSx
INSA, INSB pin pull-up current V
I(INSA)
= 0 V, V
I(INSB)
= 0 V −14 −11 −8 µA
t
D_INS
Insertion delay time, V
IN
falling, INSA, INSB To GATE pull-up 1.5 2.5 4.1 ms
LINEAR CURRENT AMPLIFIER (LCA)
V
OH
High-level output voltage, GATE V
I(ISENS)
= 0 V, I
O(GATE)
= −10 µA 11 14 17 V
I
SINK
Output sink current, linear mode
V
I(ISENS)
= 80 mV, V
O(GATE)
= 5 V
V
O(FLTTIME)
= 2 V
5 10
mA
I
FAULT
Output sink current, fault shutdown
V
I(ISENS)
= 80 mV, V
O(GATE)
= 5 V
V
O(FLTTIME)
> 4 V
50 100
mA
I
I
Input current, ISENS 0 V < V
I(ISENS)
< 0.2 V −1 1 µA
V
REF_K
Reference clamp voltage V
O(IRAMP)
= OPEN 33 40 47
mV
V
IO
Input offset voltage V
O(IRAMP)
= 2 V −7 7
mV
RAMP GENERATOR
I
SRC1
IRAMP source current, reduced rate turn-on V
O(IRAMP)
= 0.25 V −850 −600 −400 nA
I
SRC2
IRAMP source current, normal rate
V
O(IRAMP)
= 1 V −11 −10 −9
A
I
SRC2
IRAMP source current, normal rate
V
O(IRAMP)
= 3 V −11 −10 −9
µ
A
V
OL
Low-level output voltage, IRAMP V
I(EN)
= 0 V 2 mV
A
V
Voltage gain, relative to ISENS 9.5 10.0 10.5 mV/V
OVERLOAD COMPARATOR
V
TH_OL
Current overload threshold, ISENS 80 100 120 mV
t
DLY
Glitch filter delay time V
I(ISENS)
= 200 mV 2 4 7 µs
(1) All voltages are with respect to the −VIN terminal, unless otherwise stated.
(2) Currents are positive into and negative out of the specified terminals.
SLUS536C − AUGUST 2002 − REVISED AUGUST 2004
www.ti.com
5
ELECTRICAL CHARACTERISTICS (continued)
V
I(−VIN)
= −48 V with respect to RTN, V
I(EN)
= 2.8 V, V
I(INSA)
= 0 V, V
I(INSB)
= 0 V, V
I(UVLO)
= 2.5 V, V
I(OVLO)
= 0 V, V
I(ISENS)
= 0 V, all outputs
unloaded, T
A
= −40°C to 85°C (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
FAULT TIMER
V
OL
Low-level output voltage, FLTTIME V
I(EN)
= 0 V 5 mV
I
CHG
Charging current, current limit mode V
I(ISENS)
= 80 mV, V
O(FLTTIME)
= 2 V −55 −50 −45 µA
V
FLT
Fault threshold voltage 3.75 4.00 4.25 V
I
DSG
Discharge current, retry mode TPS2393 V
I(ISENS)
= 80 mV, V
O(FLTTIME)
= 2 V 0.38 0.61 µA
D Output duty cycle TPS2393 V
I(ISENS)
= 80 mV 1.0% 1.5%
I
RST
Discharge current, timer reset mode V
O(FLTTIME)
= 2 V, V
I(ISENS)
= 0 V 1 mA
POWERGOOD SENSING
V
TH
DRAINSNS threshold voltage 1.20 1.35 1.50 V
I
SRC
DRAINSNS pull-up current V
I(DRAINSNS)
= 0 V −14 −11 −8
A
I
OH
High-level output leakage current, PG output V
I(EN)
= 0 V, V
O(PG)
= 65 V 10
µ
A
R
DS(on)
Driver on-resistance, PG output
V
I(ISENS)
= 0 V, V
I(DRAINSNS)
= 0 V
I
O(PG)
= 1 mA
50 80 Ω
FAULT OUTPUT
I
OH
High-level output leakage current, FAULT V
I(EN)
= 0 V, V
O(FAULT)
= 65 V 10 µA
R
DS(on)
Driver on-resistance, FAULT
V
I(ISENS)
= 80 V, V
O(FLTTIME)
= 5 V
I
O(FAULT)
= 1 mA
50 80 Ω
(1) All voltages are with respect to the −VIN terminal, unless otherwise stated.
(2) Currents are positive into and negative out of the specified terminals.
TERMINAL FUNCTIONS
TERMINAL
I/O
DESCRIPTION
NAME PW DBT
I/O
DESCRIPTION
DRAINSNS 13 41 I Sense input for monitoring the load voltage status
EN 5 14 I Enable input to turn on/off power to the load
FAULT 4 13 O Open-drain, active-low indication of a load fault condition
FLTTIME 6 15 I/O Connection for user-programming of the fault timeout period
GATE 10 28 O Gate drive for external N−channel FET
INSA 2 1 I Insertion detection input pin A
INSB 3 7 I Insertion detection input pin B
IRAMP 7 16 I/O Programming input for setting the inrush current slew rate
ISENS 9 27 I Current sense input
OVLO 14 43 I Voltage sense input for supply overvoltage lockout (OVLO) protection
PG 12 40 O Open-drain, active-low indication of load power-good condition
RTN 11 34 I Positive supply input
UVLO 1 44 I Voltage sense input for supply undervoltage lockout (UVLO) protection
−VIN 8 22 I Negative supply input and reference pin
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