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TI-BQ2026.pdf
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TI-BQ2026.pdf
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DBZ Package
(Top View)
LP Package
(BottomView)
ID ROM
(64 bits)
EPROM
Memory
(1536 bits)
EPROM
Status
(64 bits)
SDQ Communications
Controller and CRC
Generation Circuit
Internal
Bus
RAM
Buffer
(1 byte)
SDQ
VSS VSS
VSS
SDQ
VSS
1
2
3
1
VSS
2
3
VSS
SDQ
Product
Folder
Sample &
Buy
Technical
Documents
Tools &
Software
Support &
Community
bq2026
ZHCS608A –DECEMBER 2011–REVISED OCTOBER 2014
具具有有 SDQ 接接口口的的 1.5K 位位串串行行 EPROM
1 特特性性 3 说说明明
1
• 1536 位的一次性可编程 (OTP) EPROM,用于存
bq2026 是一款 1.5K 位串行 EPROM,此器件包含一
储用户可编程的配置数据
个厂家设定,唯一 48 位识别号,8 位产品编码,和一
• 厂家设定的唯一 64 位识别号
个 64 位状态寄存器。
• 单线制接口以减少电路板布线
bq2026 SDQ™ 接口只要求一个单一连接和一个接地
• 同步通信减少主机中断开销
返回。 SDQ 引脚也是 bq2026 的唯一电源。
• 在数据引脚上的 6KV IEC 61000-4-2 静电放电
(ESD)兼容性
该器件提供小型表面贴装选项,可节省在印刷电路板上
• 无需待机电源
的占用空间,同时拥有低成本优势,非常适合电池组配
• 采用 3 引脚 SOT-23 和 TO-92 封装
置参数、记录保存、资产跟踪、产品版本状态以及代码
访问安全性等应用。
2 应应用用
器器件件信信息息
(1)
• 安全编码
器器件件型型号号 封封装装 封封装装尺尺寸寸((标标称称值值))
• 库存跟踪
SOT-23 (3) 4.30mm × 4.30mm
• 产品修正维护
bq2026
TO-92 (3) 2.92mm × 1.30mm
• 电池组识别
(1) 要了解所有可用封装,请见数据表末尾的封装选项附录。
框框图图
注:可将 LP 封装的引脚 3 接地或保持悬空。
1
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.
English Data Sheet: SLUS938
bq2026
ZHCS608A –DECEMBER 2011–REVISED OCTOBER 2014
www.ti.com.cn
目目录录
1 特特性性.......................................................................... 1 7 Detailed Description .............................................. 5
7.1 Overview ................................................................... 5
2 应应用用.......................................................................... 1
7.2 Functional Block Diagram ......................................... 5
3 说说明明.......................................................................... 1
7.3 Feature Description................................................... 5
4 修修订订历历史史记记录录 ........................................................... 2
7.4 Device Functional Modes.......................................... 6
5 Pin Configuration and Functions......................... 3
8 器器件件和和文文档档支支持持...................................................... 15
6 Specifications......................................................... 3
8.1 商标 ......................................................................... 15
6.1 Absolute Maximum Ratings ...................................... 3
8.2 静电放电警告........................................................... 15
6.2 Handling Ratings....................................................... 3
8.3 术语表 ..................................................................... 15
6.3 Electrical Characteristics: DC ................................... 4
9 机机械械、、封封装装和和可可订订购购信信息息 ....................................... 15
6.4 Switching Characteristcs: AC.................................... 4
4 修修订订历历史史记记录录
Changes from Original (April 2013) to Revision A Page
• 已更改文档格式以符合最新数据表标准................................................................................................................................... 1
• 已添加处理额定值表,特性描述,器件功能模式,器件和文档支持以及机械、封装和可订购信息部分.................................. 1
• 已添加注释至首页图 ............................................................................................................................................................... 1
• Changed pin 3 (VSS) description for LP package.................................................................................................................. 3
2 Copyright © 2011–2014, Texas Instruments Incorporated
1
VSS
2
3
VSS
SDQ
VSS
SDQ
VSS
1
2
3
bq2026
www.ti.com.cn
ZHCS608A –DECEMBER 2011–REVISED OCTOBER 2014
5 Pin Configuration and Functions
DBZ Package
SOT-23-3
(Top View)
LP Package
TO-92-3
(Top View)
Pin Functions
PIN
I/O DESCRIPTION
NAME DBZ LP
SDQ 1 2 I/O Data
VSS 2, 3 1 — Ground
VSS — 3 — Can be ground or left unconnected
6 Specifications
6.1 Absolute Maximum Ratings
over operating free-air temperature range (unless otherwise noted)
(1)
MIN MAX UNIT
DC voltage applied to V
PU
See Figure 1 –0.3 12.5 V
Low-level output current, I
OL
5 mA
ESD IEC 61000-4-2 Air discharge SDQ to V
SS,
V
SS
to SDQ 6 kV
Operating free-air temperature range, T
A
–20 70 °C
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings
only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended
Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
6.2 Handling Ratings
MIN MAX UNIT
T
stg
Storage temperature range –55 125 °C
Copyright © 2011–2014, Texas Instruments Incorporated 3
bq2026
ZHCS608A –DECEMBER 2011 –REVISED OCTOBER 2014
www.ti.com.cn
6.3 Electrical Characteristics: DC
At T
A
= –20°C to 70°C; V
PU(min)
= 2.65 V
DC
to 5.5 V
DC
, all voltages relative to VSS.
PARAMETER TEST CONDITION MIN TYP MAX UNIT
I
SDQ
Supply current V
PU
= 5.5 V 20 μA
Logic 0, V
PU
= 5.5 V, I
OL
= 4 mA, SDQ pin 0.4 V
V
OL
Low-level output voltage
Logic 0, V
PU
= 2.65 V, I
OL
= 2 mA 0.4 V
V
OH
High-level output voltage Logic 1 V
PU
5.5 V
I
OL
Low-level output current (sink) V
OL
= 0.4 V, SDQ pin 4 mA
V
IL
Low-level input voltage Logic 0 0.8 V
V
IH
High-level input voltage Logic 1 2.2 V
V
PP
Programming voltage 11.5 12 V
I
lkg
Input leakage 1.4 µA
C
I
Input capacitance 1.2 nF
6.4 Switching Characteristcs: AC
T
A
= –20°C to 70°C; V
PU(min)
= 2.65 V
DC
to 5.5 V
DC
, all voltages relative to VSS
PARAMETER TEST CONDITION MIN TYP MAX UNIT
t
c
Bit cycle time
(1)
60 120 μs
t
WSTRB
Write start cycle
(1)
1 15 μs
t
WDSU
Write data setup
(1)
t
WSTRB
15 μs
t
WDH
Write data hold
(1) (2)
60 t
c
μs
t
rec
Recovery time
(1)
1 μs
t
RSTRB
Read start cycle
(1)
1 13 μs
t
ODD
Output data delay
(1)
t
RSTRB
13 μs
t
ODHO
Output data hold
(1)
17 60 μs
t
RST
Reset time
(1)
480 μs
t
PPD
Presence pulse delay
(1)
15 64 μs
t
PP
Presence pulse
(1)
60 240 μs
t
EPROG
EPROM programming time 480 μs
t
PSU
Program setup time 5 μs
t
PREC
Program recovery time 5 μs
t
PRE
Program rising-edge time 5 μs
t
PFE
Program falling-edge time 5 μs
t
RSTREC
480 μs
(1) 5-kΩ series resistor between SDQ pin and V
PU
. (See Figure 1)
(2) t
WDH
must be less than t
c
to account for recovery.
4 Copyright © 2011–2014, Texas Instruments Incorporated
ID ROM
(64 bits)
EPROM
Memory
(1536 bits)
EPROM
Status
(64 bits)
SDQ Communications
Controller and CRC
Generation Circuit
Internal
Bus
RAM
Buffer
(1 byte)
SDQ
VSS VSS
bq2026
www.ti.com.cn
ZHCS608A –DECEMBER 2011–REVISED OCTOBER 2014
7 Detailed Description
7.1 Overview
The block diagram shows the relationships among the major control and memory sections of the bq2026. The
bq2026 has three main data components: a 64-bit factory-programmed ROM, including 8-bit family code, 48-bit
identification number and 8-bit CRC value, 1536-bit EPROM, and EPROM Status bytes. Power for read and write
operations is derived from the SDQ pin. An internal capacitor stores energy while the signal line is high, and
releases energy during the low times of the SDQ pin until the pin returns high to replenish the charge on the
capacitor.
7.2 Functional Block Diagram
7.3 Feature Description
7.3.1 EPROM
Table 1 is a memory map of the 1536-bit EPROM section of the bq2026, configured as six pages of 32 bytes
each. The 1-byte RAM buffer is an additional register used when programming the memory. Data are first written
to the RAM buffer and then verified by reading a 16-bit CRC from the bq2026 that confirms proper receipt of the
data. If the buffer contents are correct, a programming pulse is issued and a 1-byte segment of data is written
into the selected address in memory. This process ensures data integrity when programming the memory. The
details for reading and programming the 1536-bit EPROM portion of the bq2026 are in the Memory and Status
Function Commands section of this data sheet.
Table 1. 1536-Bit EPROM Data Memory Map
ADDRESS (HEX) PAGE
00A0-00BF Page 5
0080-009F Page 4
0060-007F Page 3
0040-005F Page 2
0020-003F Page 1
0000-001F Page 0
7.3.2 EPROM Status Memory
In addition to the programmable 1536-bits of memory are eight bytes of status information, the first seven bytes
are available to the user, contained in the EPROM status memory. The status memory is accessible with
separate commands. The status bytes are EPROM and are read or programmed to indicate various conditions to
the software interrogating the bq2026. These general-purpose bytes can be used by the customer to store
various information.
Table 2. EPROM Status Bytes
ADDRESS (HEX) PAGE
100h-107h General-purpose OTP status memory
Copyright © 2011–2014, Texas Instruments Incorporated 5
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