IPL65R160CFD7 INFINEON 英飞凌芯片 中文版规格书手册.pdf
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IPL65R160CFD7
Rev.2.0,2021-07-28Final Data Sheet
ThinPAK8x8
Drain
Pin 5
Gate
Pin 1
Source
Pin 3,4
*1: Internal body diode
*2: Integrated ESD diode
*1
*2
Driver
Source
Pin 2
MOSFET
650VCoolMOSªCFD7SJPowerDevice
Thelatest650VCoolMOS™CFD7extendsthevoltageclassofferingof
theCFD7familyandisasuccessortothe650VCoolMOS™CFD2.
Resultingfromimprovedswitchingperformanceandexcellentthermal
behavior,650VCooMOS™CFD7offershighestefficiencyinresonant
switchingtopologies,suchasLLCandphase-shift-full-bridge(ZVS).As
partofInfineon’sfastbodydiodeportfolio,thisnewproductseriesblends
alladvantagesofafastswitchingtechnologytogetherwithsuperiorhard
commutationrobustness.TheCoolMOS™CFD7technologymeets
highestefficiencyandreliabilitystandardsandfurthermoresupportshigh
powerdensitysolutions.
Features
•Ultra-fastbodydiode
•650Vbreakdownvoltage
•Best-in-classR
DS(on)
•Reducedswitchinglosses
•LowR
DS(on)
dependencyovertemperature
Benefits
•Excellenthardcommutationruggedness
•Extrasafetymarginfordesignswithincreasedbusvoltage
•Enablingincreasedpowerdensitysolutions
•OutstandinglightloadefficiencyinindustrialSMPSapplications
•ImprovedfullloadefficiencyinindustrialSMPSapplications
•PricecompetitivenessoverpreviousCoolMOS™families
Potentialapplications
SuitableforSoftSwitchingtopologies
Optimizedforphase-shiftfull-bridge(ZVS),LLCApplications–Server,
Telecom,EVCharging,Solar
Productvalidation
FullyqualifiedaccordingtoJEDECforIndustrialApplications
Pleasenote:Thesourceandsensesourcepinsarenotexchangeable.
Theirexchangemightleadtomalfunction.Forparalleling4pinMOSFET
devicestheplacementofthegateresistorisgenerallyrecommendedtobe
ontheDriverSourceinsteadoftheGate.
Table1KeyPerformanceParameters
Parameter Value Unit
V
DS
@ T
j,max
700 V
R
DS(on),max
160 mΩ
Q
g,typ
28 nC
I
D,pulse
55 A
E
oss
@ 400V 4.0 µJ
Body diode di
F
/dt 1300 A/µs
Type/OrderingCode Package Marking RelatedLinks
IPL65R160CFD7 PG-VSON-4 65R160F7 see Appendix A
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