没有合适的资源?快使用搜索试试~ 我知道了~
IPL65R065CFD7 INFINEON 英飞凌芯片 中文版规格书手册.pdf
需积分: 5 0 下载量 136 浏览量
2023-06-12
10:15:07
上传
评论
收藏 1.21MB PDF 举报
温馨提示
![preview](https://dl-preview.csdnimg.cn/87897049/0001-252fdcd46abf26fee38f81bb3da90cfe_thumbnail.jpeg)
![preview-icon](https://csdnimg.cn/release/downloadcmsfe/public/img/scale.ab9e0183.png)
试读
14页
IPL65R065CFD7 INFINEON 英飞凌芯片 中文版规格书手册
资源推荐
资源详情
资源评论
![pdf](https://img-home.csdnimg.cn/images/20210720083512.png)
![pdf](https://img-home.csdnimg.cn/images/20210720083512.png)
![pdf](https://img-home.csdnimg.cn/images/20210720083512.png)
![pdf](https://img-home.csdnimg.cn/images/20210720083512.png)
![pdf](https://img-home.csdnimg.cn/images/20210720083512.png)
![pdf](https://img-home.csdnimg.cn/images/20210720083512.png)
![pdf](https://img-home.csdnimg.cn/images/20210720083512.png)
![pdf](https://img-home.csdnimg.cn/images/20210720083512.png)
![pdf](https://img-home.csdnimg.cn/images/20210720083512.png)
![pdf](https://img-home.csdnimg.cn/images/20210720083512.png)
![pdf](https://img-home.csdnimg.cn/images/20210720083512.png)
![pdf](https://img-home.csdnimg.cn/images/20210720083512.png)
![pdf](https://img-home.csdnimg.cn/images/20210720083512.png)
![pdf](https://img-home.csdnimg.cn/images/20210720083512.png)
![pdf](https://img-home.csdnimg.cn/images/20210720083512.png)
![](https://csdnimg.cn/release/download_crawler_static/87897049/bg1.jpg)
1
IPL65R065CFD7
Rev.2.0,2021-07-28Final Data Sheet
ThinPAK8x8
Drain
Pin 5
Gate
Pin 1
Power
Source
Pin 3,4
Driver
Source
Pin 2
*1
*1: Internal body diode
MOSFET
650VCoolMOSªCFD7SJPowerDevice
Thelatest650VCoolMOS™CFD7extendsthevoltageclassofferingof
theCFD7familyandisasuccessortothe650VCoolMOS™CFD2.
Resultingfromimprovedswitchingperformanceandexcellentthermal
behavior,650VCooMOS™CFD7offershighestefficiencyinresonant
switchingtopologies,suchasLLCandphase-shift-full-bridge(ZVS).As
partofInfineon’sfastbodydiodeportfolio,thisnewproductseriesblends
alladvantagesofafastswitchingtechnologytogetherwithsuperiorhard
commutationrobustness.TheCoolMOS™CFD7technologymeets
highestefficiencyandreliabilitystandardsandfurthermoresupportshigh
powerdensitysolutions.
Features
•Ultra-fastbodydiode
•650Vbreakdownvoltage
•Best-in-classR
DS(on)
•Reducedswitchinglosses
•LowR
DS(on)
dependencyovertemperature
Benefits
•Excellenthardcommutationruggedness
•Extrasafetymarginfordesignswithincreasedbusvoltage
•Enablingincreasedpowerdensitysolutions
•OutstandinglightloadefficiencyinindustrialSMPSapplications
•ImprovedfullloadefficiencyinindustrialSMPSapplications
•PricecompetitivenessoverpreviousCoolMOS™families
Potentialapplications
SuitableforSoftSwitchingtopologies
Optimizedforphase-shiftfull-bridge(ZVS),LLCApplications–Server,
Telecom,EVCharging,Solar
Productvalidation
FullyqualifiedaccordingtoJEDECforIndustrialApplications
Pleasenote:Thesourceandsensesourcepinsarenotexchangeable.
Theirexchangemightleadtomalfunction.Forparalleling4pinMOSFET
devicestheplacementofthegateresistorisgenerallyrecommendedtobe
ontheDriverSourceinsteadoftheGate.
Table1KeyPerformanceParameters
Parameter Value Unit
V
DS
@ T
j,max
700 V
R
DS(on),max
65 mΩ
Q
g,typ
68 nC
I
D,pulse
139 A
E
oss
@ 400V 9.5 µJ
Body diode di
F
/dt 1300 A/µs
Type/OrderingCode Package Marking RelatedLinks
IPL65R065CFD7 PG-VSON-4 65R065F7 see Appendix A
![](https://csdnimg.cn/release/download_crawler_static/87897049/bg2.jpg)
2
650VCoolMOSªCFD7SJPowerDevice
IPL65R065CFD7
Rev.2.0,2021-07-28Final Data Sheet
TableofContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Test Circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Appendix A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
![](https://csdnimg.cn/release/download_crawler_static/87897049/bg3.jpg)
3
650VCoolMOSªCFD7SJPowerDevice
IPL65R065CFD7
Rev.2.0,2021-07-28Final Data Sheet
1Maximumratings
atT
j
=25°C,unlessotherwisespecified
Table2Maximumratings
Values
Min. Typ. Max.
Parameter Symbol Unit Note/TestCondition
Continuous drain current
1)
I
D
-
-
-
-
33
23
A
T
C
=25°C
T
C
=100°C
Pulsed drain current
2)
I
D,pulse
- - 139 A T
C
=25°C
Avalanche energy, single pulse E
AS
- - 171 mJ I
D
=5.1A; V
DD
=50V; see table 10
Avalanche energy, repetitive E
AR
- - 0.86 mJ I
D
=5.1A; V
DD
=50V; see table 10
Avalanche current, single pulse I
AS
- - 5.1 A -
MOSFET dv/dt ruggedness dv/dt - - 120 V/ns V
DS
=0...400V
Gate source voltage (static) V
GS
-20 - 20 V static;
Gate source voltage (dynamic) V
GS
-30 - 30 V AC (f>1 Hz)
Power dissipation P
tot
- - 195 W T
C
=25°C
Storage temperature T
stg
-40 - 150 °C -
Operating junction temperature T
j
-40 - 150 °C -
Mounting torque - - - - Ncm -
Continuous diode forward current
1)
I
S
- - 33 A T
C
=25°C
Diode pulse current
2)
I
S,pulse
- - 139 A T
C
=25°C
Reverse diode dv/dt
3)
dv/dt - - 70 V/ns
V
DS
=0...400V,I
SD
<=16.4A,T
j
=25°C
see table 8
Maximum diode commutation speed di
F
/dt - - 1300 A/µs
V
DS
=0...400V,I
SD
<=16.4A,T
j
=25°C
see table 8
Insulation withstand voltage V
ISO
- - n.a. V V
rms
,T
C
=25°C,t=1min
1)
Limited by T
j max
.
2)
Pulse width t
p
limited by T
j,max
3)
Identical low side and high side switch with identical R
G
剩余13页未读,继续阅读
资源评论
![avatar-default](https://csdnimg.cn/release/downloadcmsfe/public/img/lazyLogo2.1882d7f4.png)
![avatar](https://profile-avatar.csdnimg.cn/default.jpg!1)
芯脉芯城
- 粉丝: 3
- 资源: 4031
上传资源 快速赚钱
我的内容管理 展开
我的资源 快来上传第一个资源
我的收益
登录查看自己的收益我的积分 登录查看自己的积分
我的C币 登录后查看C币余额
我的收藏
我的下载
下载帮助
![voice](https://csdnimg.cn/release/downloadcmsfe/public/img/voice.245cc511.png)
![center-task](https://csdnimg.cn/release/downloadcmsfe/public/img/center-task.c2eda91a.png)
最新资源
- request-validator.cpython-37
- pygments.lexers.javascript ~~~~~~~~~~~~~~~~~~~~~~~~~~
- 简单小游戏制作-飞行棋
- Python数学建模例子.rar
- Java项目-基于SSM+JSP的校园外卖配送系统的设计与实现(源码+万字LW+部署视频+代码讲解视频+全套软件)
- Color-Transformer introduction
- FastStone Capture屏幕长截图软件包
- Table IoT物联网工具,简单快速的搭建物联网服务平台
- zheng2020 ecg new dataset-12 lead-add-label
- """YOLOv5-specific modules Usage: $ python path/to/models/y
资源上传下载、课程学习等过程中有任何疑问或建议,欢迎提出宝贵意见哦~我们会及时处理!
点击此处反馈
![feedback](https://img-home.csdnimg.cn/images/20220527035711.png)
![feedback](https://img-home.csdnimg.cn/images/20220527035711.png)
![feedback-tip](https://img-home.csdnimg.cn/images/20220527035111.png)
安全验证
文档复制为VIP权益,开通VIP直接复制
![dialog-icon](https://csdnimg.cn/release/downloadcmsfe/public/img/green-success.6a4acb44.png)